Effect of Doped CeO with Si3N4 Powders on the Densification Mechanism During
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Abstract The densification mechanism of doped CeO with Si3N4 powder during Spark Plasma Sintering (SPS) was investigated under temperatures ranging from 1500 to 1750 °C at soaking pressures of 30, 40, 50 MPa. Results showed that the relative density of Si3N4 ceramics sintered at 1650 °C and 30 MPa was 97.9%. A creep model was employed to determine the mechanism, which can be interpreted on the basis of the stress exponent (n). The results showed that the mechanism was controlled by liquid phase sintering at low effective stress regime (n=1).
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