scholarly journals Structure, Electrical and Optical Properties of ITO Thin Films and Their influence on Performance of CdS/CdTe Thin-Film Solar Cells

2021 ◽  
Author(s):  
Moustafa Ahmed ◽  
Ahmed Bakry ◽  
Essam R Shaaban ◽  
Hamed Dalir
Keyword(s):  
Solar Cells ◽  
Film Thickness ◽  
Energy Gap ◽  
Structural Parameters ◽  
Window Layer ◽  
Optical Parameters ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Cdte Solar Cells ◽  
Ito Films

Abstract ITO was prepared by mixing gradient In2O3 and SnO2 powders using solid phase reaction manner. Using electron beam gun tool, ITO films with varied thicknesses were fabricated. The structure, electrical and optical parameters of the prepared films were studied. XRD patterns were used to establish the micro-structural parameters (lattice strain and crystallite size). The SEM shows improvement of grain size with the increase of the film thickness. The electrical parameters of ITO films were measured by means of the standard four-point probe method. It was found that when the film thickness increases from 75 nm to 375 nm, the resistivity decreases to lower value of 1.65×10-4 Ω.cm and slightly increases to 1.93 ×10-4 Ω.cm at thickness of 375 nm. The ITO films with lower electrical properties are appropriate for high-efficiency CdTe solar cells. In terms of spectral ellipsomeric, three optical layer models (adhesive layer of the substrate/B-spline layer of ITO film/surface roughness layer) were applied to estimate the film thickness with high accuracy. The absorption coefficient and energy gap were calculated from the transmission and reflection spectra in the strong absorption region. As the film thickness increases, the optical energy gap was found to increase from 3.56 eV to 3.69 eV. In terms of Hall-effect measurements, both carrier concentration and hall mobility were determined. In addition, influences of ITO layers with various thicknesses on the performance of CdS/CdTe solar cells were checked. When the ITO window layer thickness is 325 nm, Jsc = 17 mA/cm2, Voc = 0.82 V, and FF = 57.4%, the calculated highest power conversion efficiency (PCE) is 8.6%.

scholarly journals Low-Temperature Synthesis, Structural and Optical Characterizations of The Novel Bisbs3 Thin Films as Anew Absorber Layer for Solar Cells

2021 ◽  
Author(s):  
I M El radaf ◽  
H.Y.S Al-Zahrani
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Film Thickness ◽  
Energy Gap ◽  
Structural Parameters ◽  
Research Work ◽  
Optical Parameters ◽  
Glass Substrates ◽  
Diffraction Patterns ◽  
P Type

Abstract In this research work, thin films of BiSbS3 have been successfully synthesized onto well cleaned soda-lima glass substrates via the chemical bath deposition procedure at different thicknesses (t= 159, 243, 296 and 362 nm). The X-ray diffraction patterns of the chemically deposited BiSbS3 films depicted that the synthesized films exposed polycrystalline nature and have an orthorhombic structure. The structural parameters of the chemically deposited BiSbS3 films were evaluated by Debye-Scherer’s formulas. The surface morphologies of the BiSbS3 films were fixed via the field-emission-scanning-electron microscope. The analyses of the linear optical parameters of the chemically deposited BiSbS3 thin films refer to improving the values of the absorption coefficient, α and the linear refractive index, n via the increase in the film thickness. In addition, there is an observed reduction in the energy gap, Eg values from 1.38 to 1.22 eV occurred by raising the film thickness. Furthermore, there is an enhancement in the nonlinear optical constants and the optoelectrical parameters occurred by raising the film thickness where the nonlinear refractive index, \({n}_{2},\)the optical free carrier concentration, \({N}_{opt}\) and the optical conductivity σopt were enlarged with increasing the values of film thickness. Moreover, the hot probe procedure was applied to the BiSbS3 thin films and this method demonstrated that the chemically deposited BiSbS3 films are p-type semiconductors.

Correlation of chemical and structural parameters with non-uniform cell performance in CdS/CdTe solar cells

2001 ◽  
Vol 387 (1-2) ◽  
pp. 92-96 ◽  
Author(s):  
P.N Gibson ◽  
M.A Baker ◽  
E.D Dunlop ◽  
M.E Özsan ◽  
D Lincot ◽  
...  
Keyword(s):  
Solar Cells ◽  
Structural Parameters ◽  
Cell Performance ◽  
Cdte Solar Cells

Phase Formation, Crystal Structure and Ion Conductivity of Silver Antimonate-Molybdates

2020 ◽  
Vol 20 (7) ◽  
pp. 4597-4600
Author(s):  
Yu. A. Lupitskaya ◽  
D. A. Kalganov ◽  
L. Yu. Kovalenko ◽  
F. A. Yaroshenko
Keyword(s):  
Solid Phase ◽  
Rietveld Method ◽  
Structural Parameters ◽  
Average Particle Size ◽  
Structural Disorder ◽  
Synthesis Temperature ◽  
Average Particle ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Pyrochlore Type

The features of the formation of compounds based on silver antimonate obtained in the AgNO3–Sb2O3–MoO3 system by the solid-phase reaction were investigated. For a synthesis temperature of 1023 K, a homogeneous concentration region of the Ag2−xSb2−xMoxO6 solid solution with a structure of the defective pyrochlore type in the range of 0.0 ≤ x ≤ 2.0 was detected. The Rietveld method, within the constraints of the Fd-3m space group, was used to refinement of X-ray diffraction data, specify the structural parameters of powders, and the correlation of structural disorder with their electrically conductive properties. Relative density and average particle size for ceramic samples sintered at 1223 K were determined using scanning electron microscopy.

Deposition Of Znte Thin Films By Close Spaced Sublimation: Structural And Electrical Studies

1997 ◽  
Vol 485 ◽  
Author(s):  
D. J. Goyal ◽  
P. G. Bilurkar ◽  
S. K. Thorat ◽  
N. V. Mate
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Copper Chloride ◽  
Low Cost ◽  
Alcoholic Solution ◽  
Cdte Solar Cells ◽  
Type Semiconductor ◽  
Znte Thin Films

AbstractZinc telluride has the potential of being a low-cost, environmentally stable, lowresistance and easily manufacturable back contact for CdS/CdTe solar cells. Close Spaced Sublimation (CSS) technique is used to deposit thin films of ZnTe. The results are reported in this study.The effects of substrate temperature and film thickness on the structural properties of the deposited thin films are studied. X-ray diffractograms show that all the films prominently exhibit presence of (111) and (200) orientations. However, the degree of the preferred orientation changes as a function of the film thickness. Increase in film thickness reduces the preferential orientation.The as deposited ZnTe thin films, being that of p-type semiconductor, are highly resistive. In order to effectively use these as contact to CdS/CdTe solar cells, they are made more conductive by doping copper. The doping is effected by dipping the films in alcoholic solution of copper chloride, followed by air annealing at 200°C. The resistivity of all the doped films drops drastically in the initial 10 minutes of annealing. The extent of doping is controlled by varying the dipping time.The effects of substrate temperature, film thickness and doping, on the stoichiometry of the films, are studied using Atomic Absorption Spectroscopy (AAS).

Surface treatment of the window layer in CdS/CdTe solar cells

2014 ◽  
Vol 65 (10) ◽  
pp. 1590-1593 ◽  
Author(s):  
Shin Haeng Cho ◽  
Sang Su Kim ◽  
Min Hyuk Park ◽  
Jong Hee Suh ◽  
Jin Ki Hong
Keyword(s):  
Solar Cells ◽  
Surface Treatment ◽  
Window Layer ◽  
Cdte Solar Cells

Structural, Optical, and Optoelectrical Studies of Spray Pyrolyzed CuGaSnS4 Thin Films

2021 ◽  
Author(s):  
Islam M El radaf ◽  
Hnan Y Alzahrani
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Nonlinear Optical ◽  
Energy Gap ◽  
Structural Parameters ◽  
Stoichiometric Composition ◽  
Optical Energy Gap ◽  
Linear Absorption ◽  
Glass Substrates ◽  
D Values

Abstract We deposited CuGaSnS4 thin films on soda-lima glass substrates via a spray pyrolysis process. The X-ray diffraction of CuGaSnS4 films established the formation of an orthorhombic single phase. In addition, the structural parameters of the CuGaSnS4 films were estimated by Debye-Scherer’s formulas, which showed that an enhancement in crystallite size (D) values occurred by increasing the thickness of the investigated films. The EDAX pattern of CuGaSnS4 films confirms a stoichiometric composition. The optical results revealed that the CuGaSnS4 films possessed a direct optical energy gap (Eg). The Eg values were reduced from 1.50 to 1.38 eV with the increase in thickness. Also, there was an observed increase in the linear refractive index and the linear absorption coefficient values occurred due to the increased thickness. Finally, the optoelectrical constants of the sprayed CuGaSnS4 films such as the optical conductivity (σopt) and the optical free carrier concentration to effective mass (N_opt/m^* ) were enlarged with increasing film thickness. The nonlinear optical study showed that the increase in film thickness enhanced the nonlinear optical constants of CuGaSnS4 films. The hot-probe procedure shows that the sprayed CuGaSnS4 films expose p-type conductivity.

scholarly journals Prospects of Back Surface Field Effect in Ultra-Thin High-Efficiency CdS/CdTe Solar Cells from Numerical Modeling

2010 ◽  
Vol 2010 ◽  
pp. 1-8 ◽  
Author(s):  
Nowshad Amin ◽  
M. A. Matin ◽  
M. M. Aliyu ◽  
M. A. Alghoul ◽  
M. R. Karim ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Cost Effective ◽  
Window Layer ◽  
Back Surface ◽  
Back Surface Field ◽  
Cdte Solar Cells ◽  
Carrier Recombination ◽  
Surface Field ◽  
Case Structure

Polycrystalline CdTe shows greater promises for the development of cost-effective, efficient, and reliable thin film solar cells. Results of numerical analysis using AMPS-1D simulator in exploring the possibility of ultrathin, high efficiency, and stable CdS/CdTe cells are presented. The conventional baseline case structure of CdS/CdTe cell has been explored with reduced CdTe absorber and CdS window layer thickness, where 1 μm thin CdTe and 50 nm CdS layers showed reasonable efficiencies over 15%. The viability of 1 μm CdTe absorber layer together with possible back surface field (BSF) layers to reduce minority carrier recombination loss at the back contact in ultra thin CdS/CdTe cells was investigated. Higher bandgap material like ZnTe and low bandgap materials like Sb2Te3and As2Te3as BSF were inserted to reduce the holes barrier height in the proposed ultra thin CdS/CdTe cells. The proposed structure of SnO2/Zn2SnO4/CdS/CdTe/As2Te3/Cu showed the highest conversion efficiency of 18.6% (Voc= 0.92 V,Jsc= 24.97 mA/cm2, and FF = 0.81). However, other proposed structures such as SnO2/Zn2SnO4/CdS/CdTe/Sb2Te3/Mo and SnO2/Zn2SnO4/CdS/CdTe/ZnTe/Al have also shown better stability at higher operating temperatures with acceptable efficiencies. Moreover, it was found that the cells normalized efficiency linearly decreased with the increased operating temperature with relatively lower gradient, which eventually indicates better stability of the proposed ultra thin CdS/CdTe cells.

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