Structural, Optical, and Optoelectrical Studies of Spray Pyrolyzed CuGaSnS4 Thin Films

2021 ◽  
Author(s):  
Islam M El radaf ◽  
Hnan Y Alzahrani
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Nonlinear Optical ◽  
Energy Gap ◽  
Structural Parameters ◽  
Stoichiometric Composition ◽  
Optical Energy Gap ◽  
Linear Absorption ◽  
Glass Substrates ◽  
D Values

Abstract We deposited CuGaSnS4 thin films on soda-lima glass substrates via a spray pyrolysis process. The X-ray diffraction of CuGaSnS4 films established the formation of an orthorhombic single phase. In addition, the structural parameters of the CuGaSnS4 films were estimated by Debye-Scherer’s formulas, which showed that an enhancement in crystallite size (D) values occurred by increasing the thickness of the investigated films. The EDAX pattern of CuGaSnS4 films confirms a stoichiometric composition. The optical results revealed that the CuGaSnS4 films possessed a direct optical energy gap (Eg). The Eg values were reduced from 1.50 to 1.38 eV with the increase in thickness. Also, there was an observed increase in the linear refractive index and the linear absorption coefficient values occurred due to the increased thickness. Finally, the optoelectrical constants of the sprayed CuGaSnS4 films such as the optical conductivity (σopt) and the optical free carrier concentration to effective mass (N_opt/m^* ) were enlarged with increasing film thickness. The nonlinear optical study showed that the increase in film thickness enhanced the nonlinear optical constants of CuGaSnS4 films. The hot-probe procedure shows that the sprayed CuGaSnS4 films expose p-type conductivity.

scholarly journals Low-Temperature Synthesis, Structural and Optical Characterizations of The Novel Bisbs3 Thin Films as Anew Absorber Layer for Solar Cells

2021 ◽  
Author(s):  
I M El radaf ◽  
H.Y.S Al-Zahrani
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Film Thickness ◽  
Energy Gap ◽  
Structural Parameters ◽  
Research Work ◽  
Optical Parameters ◽  
Glass Substrates ◽  
Diffraction Patterns ◽  
P Type

Abstract In this research work, thin films of BiSbS3 have been successfully synthesized onto well cleaned soda-lima glass substrates via the chemical bath deposition procedure at different thicknesses (t= 159, 243, 296 and 362 nm). The X-ray diffraction patterns of the chemically deposited BiSbS3 films depicted that the synthesized films exposed polycrystalline nature and have an orthorhombic structure. The structural parameters of the chemically deposited BiSbS3 films were evaluated by Debye-Scherer’s formulas. The surface morphologies of the BiSbS3 films were fixed via the field-emission-scanning-electron microscope. The analyses of the linear optical parameters of the chemically deposited BiSbS3 thin films refer to improving the values of the absorption coefficient, α and the linear refractive index, n via the increase in the film thickness. In addition, there is an observed reduction in the energy gap, Eg values from 1.38 to 1.22 eV occurred by raising the film thickness. Furthermore, there is an enhancement in the nonlinear optical constants and the optoelectrical parameters occurred by raising the film thickness where the nonlinear refractive index, \({n}_{2},\)the optical free carrier concentration, \({N}_{opt}\) and the optical conductivity σopt were enlarged with increasing the values of film thickness. Moreover, the hot probe procedure was applied to the BiSbS3 thin films and this method demonstrated that the chemically deposited BiSbS3 films are p-type semiconductors.

scholarly journals Effect of Pb percentage on optical parameters of PbxCd1-xSe thin films

2019 ◽  
Vol 14 (29) ◽  
pp. 1-7
Author(s):  
Farah Q. Kamil
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
Energy Gap ◽  
Optical Measurements ◽  
Optical Parameters ◽  
Optical Energy Gap ◽  
Optical Energy ◽  
Glass Substrates

PbxCd1-xSe compound with different Pb percentage (i.e. X=0,0.025, 0.050, 0.075, and 0.1) were prepared successfully. Thin filmswere deposited by thermal evaporation on glass substrates at filmthickness (126) nm. The optical measurements indicated thatPbxCd1-xSe films have direct optical energy gap. The value of theenergy gap decreases with the increase of Pb content from 1.78 eV to1.49 eV.

scholarly journals Optical and Structural Properties of CdS Quantum Dots Synthesized Using (MW-CBD) Technique

2020 ◽  
pp. 44-52
Author(s):  
Ahmed Ahmed S. Abed ◽  
Sattar J. Kasim ◽  
Abbas F. Abbas
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Room Temperature ◽  
Energy Gap ◽  
Cds Nanoparticles ◽  
Cds Quantum Dots ◽  
Optical Energy Gap ◽  
Glass Substrates ◽  
High Adhesion ◽  
Uv Visible

In the present study, the microwave heating method was used to prepare cadmium sulfide quantum dots CdSQDs films. CdS nanoparticles size average obtained as (7nm). The morphology, structure and composition of prepared CdSQDs were examined using (FE-SEM), (XRD) and (EDX). Optical properties of CdSQDs thin films formed and deposited onto glass substrates have been studied at room temperature using UV/ Visible spectrophotometer within the wavelength of (300-800nm), and Photoluminescence (PL) spectrum. The optical energy gap (Eg) which estimated using Tauc relation was equal (2.6eV). Prepared CdS nanoparticles thin films are free from cracks, pinholes and have high adhesion to substrate.

scholarly journals Structural and Optical Properties of (CdO)1-x(SnO2)x Thin Films Prepared by Pulsed Laser Deposition

2015 ◽  
Vol 59 ◽  
pp. 62-71
Author(s):  
Nahida B. Hasan ◽  
Ghusson H. Mohammed ◽  
Mohammed A. Abdul Majeed
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Energy Gap ◽  
Optical Transition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Optical Energy Gap ◽  
Glass Substrates ◽  
Cdo Thin Films

CdO thin films have been deposited at different concentration of SnO2 (x= (0.0, 0.05, 0.1, 0.15 and 0.2)) Wt. % onto glass substrates by pulsed laser deposition technique (PLD) using Nd-YAG laser with λ=1064nm, energy=600mJ and number of shots=500. X-ray diffraction (XRD) results reveal that the deposited (CdO)1-x(SnO2)x thin films cubic structure and the grain size increase with increasing annealing temperature and increasing concentration of SnO2. The optical transition in the (CdO)1-x(SnO2)x thin films are observed to be allowed direct transition. The value of the optical energy gap decreases with increasing of annealing temperatures and increase with increasing concentration of SnO2 for all samples.

scholarly journals Effect of thickness on the optical properties of ZnO thin films prepared by pulsed laser deposition technique (PLD)

2019 ◽  
Vol 15 (32) ◽  
pp. 114-121
Author(s):  
Maysar A. Salim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Film Thickness ◽  
Energy Gap ◽  
Transparent Conducting Oxide ◽  
Zno Thin Films ◽  
Zno Films ◽  
Zno Thin Film ◽  
Optical Energy Gap

Zinc Oxide (ZnO) thin films of different thickness were preparedon ultrasonically cleaned corning glass substrate, by pulsed laserdeposition technique (PLD) at room temperature. Since mostapplication of ZnO thin film are certainly related to its opticalproperties, so the optical properties of ZnO thin film in thewavelength range (300-1100) nm were studied, it was observed thatall ZnO films have high transmittance (˃ 80 %) in the wavelengthregion (400-1100) nm and it increase as the film thickness increase,using the optical transmittance to calculate optical energy gap (Egopt)show that (Egopt) of a direct allowed transition and its value nearlyconstant (~ 3.2 eV) for all film thickness (150, 180, 210, and 240)nm, so Zn0 thin films were used as a transparent conducting oxide(TCO) in various optoelectronic application such as a window in athin film solar cells.

Thickness Dependence of Structural and Optical Characteristics of AZO Thin Films for Organic Photovoltaic Cells

2011 ◽  
Vol 117-119 ◽  
pp. 1076-1079
Author(s):  
S.L. Wei ◽  
L.H. Zeng ◽  
Z.Y. Zhong ◽  
J.H. Gu
Keyword(s):  
Thin Films ◽  
Energy Gap ◽  
Visible Spectrum ◽  
Rf Magnetron Sputtering ◽  
Optical Characteristics ◽  
Hexagonal Crystal ◽  
Optical Energy Gap ◽  
Glass Substrates ◽  
Aluminum Doped Zinc Oxide ◽  
Deposited Films

Aluminum-doped zinc oxide (AZO) thin films with highly (002)-preferred orientation were grown on glass substrates by rf magnetron sputtering. The effect of thickness on structural and optical characteristics of the deposited films were investigated by X-ray diffractometer and spectrophotometer. The results show that the polycrystalline AZO films consist of the hexagonal crystal structures with c-axis as the preferred growth orientation normal to the substrate, and that the thickness significantly affects the crystal structure and optical properties of the thin films. With the increase of thickness, the crystallite size of the films increases, the lattice spacing, dislocation density, micro strain and optical energy gap decrease, and the average transmitance in the wavelength range of the visible spectrum also slightly decreases.

scholarly journals Influence of Film Thickness and Heat Treatment on the Physical Properties of Mn Doped Sb2Se3 Nanocrystalline Thin Films

2017 ◽  
Vol 2017 ◽  
pp. 1-14 ◽  
Author(s):  
I. K. El Zawawi ◽  
Manal A. Mahdy ◽  
E. A. El-Sayad
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Film Thickness ◽  
Energy Gap ◽  
Blue Shift ◽  
Amorphous Structure ◽  
Treatment Temperature ◽  
Optical Energy Gap ◽  
Heat Treated ◽  
Nanocrystalline Thin Films

Nanocrystalline thin films of Sb37.07Mn1.95Se60.98 with different thickness (7, 20, 40, and 80 nm) were successfully prepared via inert gas condensation technique. As-deposited films showed amorphous structure by grazing incident in-plane X-ray diffraction (GIIXD) technique. All films of different thicknesses were heat treated at 433 K for 90 min. The GIIXD pattern of annealed films showed nanocrystalline orthorhombic structure. The effect of thickness of annealed films on the structure and optical properties was studied. Calculated particle sizes are 20.67 and 24.15 for 40 and 80 nm thickness of heat treated film. High resolution transmission electron microscope HRTEM images and their diffraction patterns proved that 40 nm film thickness annealed at different temperature has nanocrystalline nature with observed (high) crystallinity that increases with annealing temperature. Blue shift of optical energy gap was observed from 1.68 to 2 eV with decreasing film thickness from 80 to 7 nm. Film thickness of 40 nm was exposed to different heat treated temperatures from 353 to 473 K to detect its effect on structure and optical and electrical properties. Blue shift from 1.73 to 1.9 eV was observed in its optical band gap due to direct transition as heat treatment temperature decreasing from 473 to 353 K. Electrical conductivity was studied for different heat treated films of thickness 40 nm, and intrinsic conduction mechanism is dominant. The activation energy Ea was affected by heat treatment process.

IMPACT OF N DOPING ON THE PHYSICAL PROPERTIES OF ZnO THIN FILMS

2018 ◽  
Vol 25 (01) ◽  
pp. 1850035 ◽  
Author(s):  
NRIPASREE NARAYANAN ◽  
N. K. DEEPAK
Keyword(s):  
Thin Films ◽  
Energy Gap ◽  
Spray Pyrolysis Technique ◽  
Compositional Analysis ◽  
Optical Transmittance ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Optical Energy Gap ◽  
Glass Substrates ◽  
N Doping

Structural, optical and electrical properties of bare and N monodoped ZnO thin films were investigated. The samples were prepared on glass substrates by spray pyrolysis technique. N doping resulted in p type electrical conductivity as evident from the Hall measurement results. XRD analysis confirmed the structural purity of all the films and compositional analysis by energy dispersive X-ray spectroscopy verified the inclusion of N in doped films in addition to Zn and O. Doping resulted in deterioration in crystallinity. Optical transmittance got diminished with doping due to the degradation in crystallinity as well as due to the presence of deep N related defects as evident from the photoluminescence spectra. Optical energy gap red-shifted with doping percentage due to the introduction of impurity levels near the valence band edge within the forbidden gap with acceptor doping.

scholarly journals The influence of Deposition Temperature on the Properties of Chemically Sprayed Nanostructured Cu2CdSnS4 Thin Films

2020 ◽  
pp. 149-155
Author(s):  
Hiba J. Ahmed ◽  
Asaad A. Kamil ◽  
Ammar A. Habeeb ◽  
Nabeel A. Bakr
Keyword(s):  
Thin Films ◽  
Deposition Temperature ◽  
Energy Gap ◽  
Chemical Spray Pyrolysis ◽  
Optical Energy Gap ◽  
Spectra Analysis ◽  
Glass Substrates ◽  
Average Grain Size ◽  
Diffraction Patterns ◽  
P Type

In this study, Cu2CdSnS4 thin films were deposited on glass substrates at fixed concentrations: 0.02 M of (CuCl2.2H2O), 0.08 M of CS (NH2)2 and 0.01 M of both SnCl2.2H2O and (CdCl2.2H2O) using Chemical Spray Pyrolysis (CSP) technique at different deposition temperatures (300, 350, 400 and 450) °C. The thickness of all samples were (300 ± 10) nm. X-ray diffraction patterns showed that all films have a tetragonal structure with a preferred orientation of (112). The maximum value of the crystallite size was 8.09 nm at 400 °C deposition temperature. Raman spectra analysis confirmed the purity of the film peaks located at (332-333). The FESEM micrographs showed that the nanostructures appeared in the form of cauliflower. The highest average grain size was 62.8 nm for the film deposited at 300 °C substrate temperature. The optical properties of all films were studied by recording the transmittance and absorbance in the wavelength range (400-900) nm. The results showed that absorption occurs in the visible and ultraviolet regions. Through the Tauc’s equation, the optical energy gap was calculated for the allowed direct transition. Its value was in the range (1.59-1.40) eV. Therefore, these films are suitable for use in solar cell applications. Hall effect results showed that Cu2CdSnS4 thin films are p-type and the highest conductivity was 0.288 (Ω.cm)-1 at 400 ˚C corresponding to the maximum mobility value and the highest charge concentration.

scholarly journals Composition and Optical Dispersion Characterization of Nanoparticles ZnO-NiO Thin Films: Effect of Annealing Temperature

2013 ◽  
Vol 13 ◽  
pp. 78-86 ◽  
Author(s):  
Saad F. Oboudi ◽  
Nadir F. Habubi ◽  
Ghuson H. Mohamed ◽  
Sami S. Chiad
Keyword(s):  
Thin Films ◽  
Oscillator Strength ◽  
Annealing Temperature ◽  
Energy Gap ◽  
Dispersion Parameters ◽  
Optical Energy Gap ◽  
Optical Energy ◽  
Optical Dispersion ◽  
Glass Substrates ◽  
Before And After

Thin films of ZnO0.7NiO0.3 have deposited on glass substrates at room temperature by using thermal evaporation technique under vacuum 10-5 mbar. The optical properties and dispersion parameters of the films have been studied. Changes in direct optical energy band gap of films were confirmed before and after annealing. The optical energy gap Eg decreased from 3.11 to 2.86 eV with increasing of annealing temperature to 200 °C. Some of the optical absorption parameters, such as optical dispersion energies Eo and Ed, Urbach tails EU , dielectric constant ε, the average values of oscillator strength So, and wavelength of single oscillator λo have been reported. An increase in the annealing temperature causes an increase in the average oscillator strength from 62.02 to 87.71 eV.

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