Small-Signal Third-Order Distortion Analysis of Transistor Amplifiers

1976 ◽  
Author(s):  
J. D. Cobb
Keyword(s):  
Small Signal ◽  
Third Order ◽  
Distortion Analysis

Third order distortion analysis from an envelope curve

2020 ◽  
Vol 454 ◽  
pp. 124492
Author(s):  
Yobani Mejía ◽  
Rufino Díaz-Uribe
Keyword(s):  
Envelope Curve ◽  
Third Order ◽  
Distortion Analysis

Large and small signal distortion analysis using modified Volterra series

2007 ◽  
Vol 54 (2) ◽  
pp. 133-142 ◽  
Author(s):  
Ioannis Sarkas ◽  
Dimitrios Mavridis ◽  
Michail Papamichail ◽  
George Papadopoulos
Keyword(s):  
Volterra Series ◽  
Small Signal ◽  
Signal Distortion ◽  
Distortion Analysis

BSIM4 to PSP Model Conversion: A Case Study

2015 ◽  
Vol 25 (03) ◽  
pp. 1640011
Author(s):  
Dušan N. Grujić ◽  
Mihajlo Božović ◽  
Milan Savić
Keyword(s):  
Noise Figure ◽  
Rf Switch ◽  
Third Order ◽  
Rf Switches ◽  
Distortion Analysis ◽  
Passive Mixers ◽  
Simulation Results ◽  
Model Conversion ◽  
Bias Point

BSIM4 model is not suitable for distortion analysis of circuits with bias point [Formula: see text], such as passive mixers and RF switches, due to discontinuities in higher order derivatives. Surface potential based PSP model has continuous derivatives to at least third-order, and is therefore suitable for intermodulation products simulation. This paper presents the case study of BSIM4 to PSP model conversion flow and comparison of active and passive mixers and SPDT RF switch simulation results. Simulation results show good agreement of original BSIM4 and converted PSP models’ CV, IV, compression point, conversion loss and noise figure, which validates the conversion flow. The converted model has a correct third-order intermodulation products (IM3) slope of three, allowing the simulation of intermodulation products, which was not possible with the original BSIM4 model.

scholarly journals A High-Efficiency K-band MMIC Linear Amplifier Using Diode Compensation

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 487 ◽  
Author(s):  
Zhu ◽  
Chen ◽  
Huang ◽  
Wang ◽  
Yu
Keyword(s):  
Output Power ◽  
High Efficiency ◽  
Small Signal Gain ◽  
Small Signal ◽  
Third Order ◽  
Nonlinear Capacitance ◽  
Power Added Efficiency ◽  
Linear Amplifier ◽  
Enhancement Method ◽  
K Band

This paper describes the design and measured performance of a high-efficiency and linearity-enhanced K-band MMIC amplifier fabricated with a 0.15 μm GaAs pHEMT processing technology. The linearization enhancement method utilizing a parallel nonlinear capacitance compensation diode was analyzed and verified. The three-stage MMIC operating at 20–22 GHz obtained an improved third-order intermodulation ratio (IM3) of 20 dBc at a 27 dBm per carrier output power while demonstrating higher than a 27 dB small signal gain and 1-dB compression point output power of 30 dBm with 33% power added efficiency (PAE). The chip dimension was 2.00 mm × 1.40 mm.

scholarly journals Broadband GaAs pHemt LNA design for T/R module application

2016 ◽  
Vol 54 (5) ◽  
pp. 584
Author(s):  
Phong Dai Le ◽  
Vu Duy Thong ◽  
Pham Le Binh
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Small Signal Gain ◽  
Small Signal ◽  
Third Order ◽  
Wide Bandwidth ◽  
Fully Integrated ◽  
Three Stages ◽  
Noise Amplifier

In this paper, a three stages monolithic low noise amplifier (LNA) for T/R module application is presented. This LNA is fully integrated on 0.15-um pHEMT GaAs technology and achieves a wide bandwidth from 6 GHz to 11 GHz. Within this band, the LNA has the minimum of 1.3 dB noise figure and over 25 dB small signal gain. The output third order interception point (OIP3) is over 30 dBm and the 1 dB compression point (P1 dB) is 16 dBm at the output.

Probe size and 5th-order aberration

1987 ◽  
Vol 45 ◽  
pp. 134-135 ◽  
Author(s):  
Zhifeng Shao
Keyword(s):  
Electron Probe ◽  
Spherical Aberration ◽  
Wave Length ◽  
Cylindrical Symmetry ◽  
Electron Wave ◽  
Third Order ◽  
The Third ◽  
Probe Radius ◽  
Small Probe ◽  
Probe Size

A small electron probe has many applications in many fields and in the case of the STEM, the probe size essentially determines the ultimate resolution. However, there are many difficulties in obtaining a very small probe.Spherical aberration is one of them and all existing probe forming systems have non-zero spherical aberration. The ultimate probe radius is given byδ = 0.43Csl/4ƛ3/4where ƛ is the electron wave length and it is apparent that δ decreases only slowly with decreasing Cs. Scherzer pointed out that the third order aberration coefficient always has the same sign regardless of the field distribution, provided only that the fields have cylindrical symmetry, are independent of time and no space charge is present. To overcome this problem, he proposed a corrector consisting of octupoles and quadrupoles.

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