ABSTRACTInfluences of the B-site substitution using Dy3+ ion on the crystal structure and ferroelectric properties of lead zirconate titanate (PZT) films were investigated. Dy3+-substituted PZT films with nominal chemical compositions of Pb1.00Dyx (Zr0.40Ti0.60)1-(3x/4)O3 (x = 0 ∼ 0.06) were fabricated by a chemical solution deposition (CSD). Polycrystalline PZT films with preferential orientation of (111)PZT were obtained on (111)Pt/TiO2/SiO2/(100)Si substrates, while epitaxially-grown (111)PZT films were fabricated on (111)SrRuO3//(111)Pt//(100)YSZ//(100)Si substrate. Ratio of PZT lattice parameters (c/a), which corresponds to its crystal anisotropy, was enhanced by the Dy3+-substitution with x = 0.02. Spontaneous polarization (Ps) of Dy3+-substituted PZT film (x = 0.02) along polar [001] axis of PZT lattice was estimated from saturation polarization (Psat) value of the epitaxially-grown (111)PZT film on (111)SrRuO3//(111)Pt//(100)YSZ//(100)Si to be 84 μC/cm2 that was significantly larger than that of non-substituted PZT (= 71 μC/cm2). We concluded that the enhancement of Ps value could be achieved by the Dy3+-substitution that promoted the crystal anisotropy of PZT lattice.
AbstractThe microstructure and electrical properties of lead zirconate titanate Pb(Zr,Ti)O3 (PZT) films prepared by chemical solution deposition (CSD) with and without lead titanate (PT) seed layers were examined as a function of Ir/lr oxide electrode type. The novel PZT CSD solution was prepared from a mixture of zirconium and titanium butoxyethoxides and lead ethylhexanoate dissolved in butoxyethanol. The use of excess-lead (PbxsTi) and stoichiometric PT seed layers was found to promote PZT(111) orientation on Ir but not on Ir oxide. Ir substrate thickness was observed to influence orientation of PZT deposited on stoichiometric PT with greater PZT(111) texturing on thinner Ir(111) substrates. PZT with greater PZT(111) texturing tended to have greater remanent polarization (2Pr, μC/cm2). PZT deposited on stoichiometric PT seed layers on Ir(111) was of higher film quality than PZT deposited on PbxsTi seed layers on Ir(111). The PZT films deposited on stoichiometric PT on Ir(111) had enhanced PZT(111) orientation, a reduced pyrochlore content, and tended to saturate at lower coercive fields, have higher remanent polarization, squarer hysteresis loops with less tilt and greater fatigue endurance. The use of iridium oxide top electrode was demonstrated to significantly improve fatigue endurance compared to use of an iridium top electrode.
1-Methoxy-2-propanol was found to be a promising safe alternative to carcinogenic and teratogenic 2-methoxyethanol as solvent for chemical solution deposition of {100}-oriented lead zirconate titanate thin films on platinized silicon.
In this study, a finely patterned lead zirconate titanate (PZT) film is fabricated by a combination of inkjet printing (IJP), chemical solution deposition (CSD), and surface energy controlling technology. The PZT film, which can be used as an actuator, has enough thickness after iterating the set of surface treatment, inkjet deposition, and baking. We confirmed the electrical characteristic of this film and drop ejection from inkjet head using it.
Growth of {100}-oriented lead zirconate titanate thin films mediated by a safe solvent
