scholarly journals MINORITY CARRIERS MOBILITY DETERMINATION IN THE BASE REGION OF N+-P-P+ SILICON SOLAR CELL UNDER EFFECTS OF IRRADIATION FLUX, TEMPERATURE AND MAGNETIC FIELD

2021 ◽  
Vol 9 (08) ◽  
pp. 694-703
Author(s):  
Sada Traore ◽  
◽  
Idrissa Gaye ◽  
Oulimata Mballo ◽  
Ibrahima Diatta ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Graphical Representation ◽  
Short Circuit ◽  
Photocurrent Density ◽  
Back Surface ◽  
Relative Value ◽  
Cell Front ◽  
Minority Carriers

The aim of this study is to show the influence of temperature on the relative value of the short-circuit photocurrent density obtained from an n+-p-p+silicon solar cell front illuminated with modulated polychromatic light. The solar cell was already subjected to charged particules irradiation flux (Φp) and intensity (kl,) and remained under both magnetic field (B) and temperature (T). Thus, the graphical representation of the relative value of the short-circuit photocurrent density as a function of the square of the magnetic field (B) yields to determine the slope, which is related to the mobility of minority carriers in the base. It is obtained for a back surface field silicon solar cellunder both temperature and irradiation flux of charged particules.

scholarly journals Theoretical Study of a Bifacial Silicon Solar Cell Front Side Illuminated: Magnetic Field Effect on the Recombination Velocities Inducing the Short Circuit and Limiting the Open Circuit

2021 ◽  
Vol 11 (2) ◽  
pp. 1-7
Author(s):  
A. D. Péné ◽  
◽  
F. I. Barro ◽  
M. Kamta ◽  
L. Bitjoka ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Short Circuit ◽  
Magnetic Field Effect ◽  
Photocurrent Density ◽  
Open Circuit ◽  
Cell Front ◽  
Static Regime ◽  
Recombination Velocity

The aim of this work is to present a study of the recombination velocities at the junction initiating the shortcircuit (Sfsc) and limiting the open circuit (Sfoc) of a silicon solar cell under magnetic field in the static regime. From the continuity equation, the density of minority charge carriers in the base, the photocurrent density, and the phototension are determined. The study of the photocurrent density and the phototension, as a function of the junction recombination velocity, makes it possible to determine the recombination velocities at the junction initiating the short-circuit and limiting the open circuit respectively. From the profile of the variation of the photocurrent density and of the phototension as a function of the junction recombination velocity, a technique for determining the junction recombination velocities initiating the short circuit situation and limiting the open circuit is presented.

I-V Characteristics for Bifacial Silicon Solar Cell under a Magnetic Field

2007 ◽  
Vol 18-19 ◽  
pp. 303-312 ◽  
Author(s):  
Saïdou Madougou ◽  
F. Made ◽  
M.S. Boukary ◽  
G. Sissoko
Keyword(s):  
Magnetic Field ◽  
Solar Cell ◽  
Numerical Simulations ◽  
Continuity Equation ◽  
Silicon Solar Cell ◽  
Base Region ◽  
Minority Carriers

In this work, the influence of magnetic field on I-V characteristics of bifacial silicon solar cell n+-p-p+ structure is studied under constant multispectral illumination. After resolution of continuity equation related to photogenerated minority carriers’ density in the base region of this cell, MATLAB numerical simulations of excess minority carriers’, photocurrent densities and junction photovoltage profiles, have been developed with magnetic field in the bulk of the base region. In the same way, the IV characteristics have been studied with magnetic field. It has been demonstrated that the I–V characteristics decreased. It also has shown how the I–V characteristics changed.

scholarly journals Magnetic Field Effect on the Electrical Characteristics of a Monocrystalline n+pp+ Silicon Solar Cell

2014 ◽  
Vol 3 (4) ◽  
pp. 196
Author(s):  
Sarhan Musa
Keyword(s):  
Magnetic Field ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Short Circuit ◽  
Forward Bias ◽  
Magnetic Field Effect ◽  
Performance Testing ◽  
Short Circuit Current ◽  
Open Circuit ◽  
The Magnetic Field

<p>In this paper, the effect of magnetic field on I-V characteristics of a silicon solar cell of n+pp+ structure is studied in dark and illumination modes. In dark, both the current and the voltage decrease with increasing the magnetic field in forward bias. However in reverse bias, the behavior is different. Under illumination, the effect of magnetic field on I-V characteristics of the silicon solar cell is studied experimentally and simulated using Neural Network Algorithm (NNA). Both short circuit current (I<sub>sc</sub>) and open circuit voltage (V<sub>oc</sub>) are measured under the influence of magnetic field. The solar cell efficiency and the fill factor (FF) are calculated without and with the magnetic field. This performance testing of the solar cell under magnetic field can be considered as one of the non-destructive reliability tools.<strong></strong></p>

scholarly journals Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3275
Author(s):  
Devendra KC ◽  
Deb Kumar Shah ◽  
M. Shaheer Akhtar ◽  
Mira Park ◽  
Chong Yeal Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
Short Circuit ◽  
Back Surface ◽  
Back Surface Field ◽  
Cdte Solar Cell ◽  
Cdte Solar Cells ◽  
Surface Field

This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (Isc = 2.09 A), power conversion efficiency (h = 15%), and quantum efficiency (QE ~ 85%) were achieved at a carrier lifetime of 1 × 103 ms and a doping concentration of 1 × 1017 cm−3 of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 mm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.

Enhancement of the performance of CdS/CdTe heterojunction solar cell using TiO2/ZnO bi-layer ARC and V2O5 BSF layers: A simulation approach

2020 ◽  
Vol 92 (2) ◽  
pp. 20901
Author(s):  
Abdul Kuddus ◽  
Md. Ferdous Rahman ◽  
Jaker Hossain ◽  
Abu Bakar Md. Ismail
Keyword(s):  
Solar Cell ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Heterojunction Solar Cell ◽  
Back Surface ◽  
Heterojunction Solar Cells

This article presents the role of Bi-layer anti-reflection coating (ARC) of TiO2/ZnO and back surface field (BSF) of V2O5 for improving the photovoltaic performance of Cadmium Sulfide (CdS) and Cadmium Telluride (CdTe) based heterojunction solar cells (HJSCs). The simulation was performed at different concentrations, thickness, defect densities of each active materials and working temperatures to optimize the most excellent structure and working conditions for achieving the highest cell performance using obtained optical and electrical parameters value from the experimental investigation on spin-coated CdS, CdTe, ZnO, TiO2 and V2O5 thin films deposited on the glass substrate. The simulation results reveal that the designed CdS/CdTe based heterojunction cell offers the highest efficiency, η of ∼25% with an enhanced open-circuit voltage, Voc of 0.811 V, short circuit current density, Jsc of 38.51 mA cm−2, fill factor, FF of 80% with bi-layer ARC and BSF. Moreover, it appears that the TiO2/ZnO bi-layer ARC, as well as ETL and V2O5 as BSF, could be highly promising materials of choice for CdS/CdTe based heterojunction solar cell.

scholarly journals Theoretical Study of Proton Radiation Influence on the Performance of a Polycrystalline Silicon Solar Cell

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Tchouadep Guy Serge ◽  
Zouma Bernard ◽  
Korgo Bruno ◽  
Soro Boubacar ◽  
Savadogo Mahamadi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Short Circuit ◽  
Experimental Studies ◽  
High Energy ◽  
High Energy Particle ◽  
Proton Radiation ◽  
Electrical Parameters ◽  
Carrier Distribution

The aim of this work is to study the behaviour of a silicon solar cell under the irradiation of different fluences of high-energy proton radiation (10 MeV) and under constant multispectral illumination. Many theoretical et experimental studies of the effect of irradiation (proton, gamma, electron, etc.) on solar cells have been carried out. These studies point out the effect of irradiation on the behaviour of the solar cell electrical parameters but do not explain the causes of these effects. In our study, we explain fundamentally the causes of the effects of the irradiation on the solar cells. Taking into account the empirical formula of diffusion length under the effect of high-energy particle irradiation, we established new expressions of continuity equation, photocurrent density, photovoltage, and dynamic junction velocity. Based on these equations, we studied the behaviour of some electronic and electrical parameters under proton radiation. Theoretical results showed that the defects created by the irradiation change the carrier distribution and the carrier dynamic in the bulk of the base and then influence the solar cell electrical parameters (short-circuit current, open-circuit voltage, conversion efficiency). It appears also in this study that, at low fluence, junction dynamic velocity decreases due to the presence of tunnel defects. Obtained results could lead to improve the quality of the junction of a silicon solar cell.

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