scholarly journals Theoretical Study of a Bifacial Silicon Solar Cell Front Side Illuminated: Magnetic Field Effect on the Recombination Velocities Inducing the Short Circuit and Limiting the Open Circuit

2021 ◽  
Vol 11 (2) ◽  
pp. 1-7
Author(s):  
A. D. Péné ◽  
◽  
F. I. Barro ◽  
M. Kamta ◽  
L. Bitjoka ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Short Circuit ◽  
Magnetic Field Effect ◽  
Photocurrent Density ◽  
Open Circuit ◽  
Cell Front ◽  
Static Regime ◽  
Recombination Velocity

The aim of this work is to present a study of the recombination velocities at the junction initiating the shortcircuit (Sfsc) and limiting the open circuit (Sfoc) of a silicon solar cell under magnetic field in the static regime. From the continuity equation, the density of minority charge carriers in the base, the photocurrent density, and the phototension are determined. The study of the photocurrent density and the phototension, as a function of the junction recombination velocity, makes it possible to determine the recombination velocities at the junction initiating the short-circuit and limiting the open circuit respectively. From the profile of the variation of the photocurrent density and of the phototension as a function of the junction recombination velocity, a technique for determining the junction recombination velocities initiating the short circuit situation and limiting the open circuit is presented.

scholarly journals Magnetic Field Effect on the Electrical Characteristics of a Monocrystalline n+pp+ Silicon Solar Cell

2014 ◽  
Vol 3 (4) ◽  
pp. 196
Author(s):  
Sarhan Musa
Keyword(s):  
Magnetic Field ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Short Circuit ◽  
Forward Bias ◽  
Magnetic Field Effect ◽  
Performance Testing ◽  
Short Circuit Current ◽  
Open Circuit ◽  
The Magnetic Field

<p>In this paper, the effect of magnetic field on I-V characteristics of a silicon solar cell of n+pp+ structure is studied in dark and illumination modes. In dark, both the current and the voltage decrease with increasing the magnetic field in forward bias. However in reverse bias, the behavior is different. Under illumination, the effect of magnetic field on I-V characteristics of the silicon solar cell is studied experimentally and simulated using Neural Network Algorithm (NNA). Both short circuit current (I<sub>sc</sub>) and open circuit voltage (V<sub>oc</sub>) are measured under the influence of magnetic field. The solar cell efficiency and the fill factor (FF) are calculated without and with the magnetic field. This performance testing of the solar cell under magnetic field can be considered as one of the non-destructive reliability tools.<strong></strong></p>

scholarly journals MINORITY CARRIERS MOBILITY DETERMINATION IN THE BASE REGION OF N+-P-P+ SILICON SOLAR CELL UNDER EFFECTS OF IRRADIATION FLUX, TEMPERATURE AND MAGNETIC FIELD

2021 ◽  
Vol 9 (08) ◽  
pp. 694-703
Author(s):  
Sada Traore ◽  
◽  
Idrissa Gaye ◽  
Oulimata Mballo ◽  
Ibrahima Diatta ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Graphical Representation ◽  
Short Circuit ◽  
Photocurrent Density ◽  
Back Surface ◽  
Relative Value ◽  
Cell Front ◽  
Minority Carriers

The aim of this study is to show the influence of temperature on the relative value of the short-circuit photocurrent density obtained from an n+-p-p+silicon solar cell front illuminated with modulated polychromatic light. The solar cell was already subjected to charged particules irradiation flux (Φp) and intensity (kl,) and remained under both magnetic field (B) and temperature (T). Thus, the graphical representation of the relative value of the short-circuit photocurrent density as a function of the square of the magnetic field (B) yields to determine the slope, which is related to the mobility of minority carriers in the base. It is obtained for a back surface field silicon solar cellunder both temperature and irradiation flux of charged particules.

scholarly journals Investigations on the Outdoor Performance Characteristics of Multicrystalline Silicon Solar Cell and Module

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
Sivakumar Parthasarathy ◽  
P. Neelamegam ◽  
P. Thilakan ◽  
N. Tamilselvan
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Critical Value ◽  
Standard Test ◽  
Open Circuit ◽  
Multicrystalline Silicon ◽  
In Series

Multicrystalline silicon solar cell and its module with 18 cells connected in series were mounted on an inclined rack tilted 12° South positioned at latitude of 12.0107° and longitude of 79.856°. Corresponding solar irradiance was measured using an optical Pyranometer. Measured irradiance, open circuit voltage (), and short circuit current () values were analyzed. values of both the cell and module were found saturated at above the critical value of illuminations which were different from each other. The integrated daily efficiency for the cell and module were ~10.25% and ~9.39%, respectively, that were less than their respective standard test condition’s value. The reasons for this drop in efficiencies were investigated and reported.

Photoelectrical and Photovoltaic Peroperties of n-ZnO/p-Si Heterojunction

2011 ◽  
Vol 399-401 ◽  
pp. 1477-1480
Author(s):  
Yan Li Xu ◽  
Jin Hua Li
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Ion Beam ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Textured Surface ◽  
Si Solar Cell ◽  
The One ◽  
P Type

n-ZnO thin films doped In with 2 atm.% were deposited on p-type silicon wafer with textured surface by Ion Beam Enhanced Deposition method, after annealing and prepared front and back electrodes, the n-ZnO/p-Si heterojunction samples were fabricated. The photoelectric property of the sample were measured and compared with silicon solar cell. The result indicated the saturated photocurrent of n-ZnO/p-Si heterojunction was 20% greater than one of the Si solar cell. It means the ZnO/Si heterojunction has a higher ability of produce photoelectron then one of silicon solarcell. The result of the photovoltaic test of n-ZnO/p-Si heterojunction show The open circuit voltage and short-circuit current of the n-ZnO/p-Si heterojunction was 400mV and 5.5mA/cm2 respectively. It was much smaller than the one of silicon solar cells. The reason was discussed

scholarly journals Effects of the Boron-Doped p+Emitter on the Efficiency of the n-Type Silicon Solar Cell

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Eun-Young Kim ◽  
Jeong Kim
Keyword(s):  
Solar Cell ◽  
Contact Resistance ◽  
Doping Level ◽  
Silicon Solar Cell ◽  
Doping Concentration ◽  
Boron Concentration ◽  
Short Circuit ◽  
Open Circuit ◽  
Maximum Efficiency ◽  
Type Silicon

The optimum structure of the p+emitter for the n-type silicon solar cell was determined with the simulation of the boron doping concentration. The boron concentration (NB) in the p+emitter was varied in the range of1×1017and2×1022 atoms/cm3while maintaining the base doping concentration at2×1016 atoms/cm3. With the increase of the boron concentration, the open circuit voltage (VOC) of the cell increased up to 0.525 V and then was nearly saturated atNB>5×1018 atoms/cm3. On the other hand, the short circuit current density (JSC) began to decrease atNB>1×1019 atoms/cm3due to the increase of the surface recombination loss, and without considering the variation of the contact resistance along the emitter doping level, the maximum efficiency of the cell was obtained at aroundNB=5×1018 atoms/cm3. While the contact resistance of the electrode decreases with the increase of the doping concentration in the p+emitter, and with consideration of the variation of the contact resistance, the optimum value ofNBfor maximum efficiency shifted to the higher doping level.

THIOCYANATE-FREE, PANCHROMATIC RUTHENIUM (II) TERPYRIDINE SENSITIZER HAVING A TRIDENTATE DIETHYLENETRIAMINE LIGAND FOR NEAR-IR SENSITIZATION OF NANOCRYSTALINE TiO2

2011 ◽  
Vol 04 (01) ◽  
pp. 21-24 ◽  
Author(s):  
ASHRAFUL ISLAM ◽  
SURYA PRAKASH SINGH ◽  
LIYUAN HAN
Keyword(s):  
Solar Cell ◽  
Fill Factor ◽  
Short Circuit ◽  
Power Conversion ◽  
Photocurrent Density ◽  
Open Circuit ◽  
Visible Range ◽  
Near Ir ◽  
Maximum Value ◽  
Open Circuit Photovoltage

A thiocyanate-free Ru (II) terpyridine complex containing a tridentate chelating ligand diethylenetriamine, Ru (4,4′, 4″-tricarboxy-2,2′:6′, 2″-terpyridine)(diethylenetriamine) 1 achieves very efficient panchromatic sensitization of nanocrystalline TiO 2 solar cell over the whole visible range extending into the near IR region (ca. 900 nm) with a maximum value of 76% at around 600 nm. A solar energy to electric power conversion efficiency (η) of 7.9% was attained under standard AM 1.5 irradiation (100 mW cm-2) with a short-circuit photocurrent density (J sc ) of 17.5 mA cm-2, an open-circuit photovoltage (V oc ) of 0.67 V, and a fill factor (ff) of 0.68.

scholarly journals PREPARATION AND CHARACTERIZATION OF P3HT-PCBM ORGANIC SOLAR CELLS

2013 ◽  
pp. 23-25
Author(s):  
ANUBHAV GUPTA ◽  
PRAVEEN S ◽  
ABHISHEK KUMAR ◽  
PRIYANKA SHREE ◽  
SUCHANA MISHRA
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Active Layer ◽  
Organic Solar Cells ◽  
Silicon Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Glass Substrates

Organic solar cells using P3HT: PCBM as an active layer on ITO coated glass substrates were fabricated and characterized. Different air annealing procedures and cathode materials were tried and the characteristics were compared with that of a standard thin film polycrystalline silicon solar cell. It was found that the sample prepared with post-deposition air annealing at 130 oC improves the open circuit voltage (Voc) considerably. Besides, short circuit current (Isc) and the efficiency (η) were highest for the sample with a non annealed active layer. Series resistance (Rs) for this sample was lowest, but 103 times higher than that of the silicon solar cell, which in turn may have reduced the efficiency value for the organic cell compared to silicon.

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