scholarly journals Low-Temperature, High-Speed Processing of Oxide Dielectric Thin Films

2021 ◽  
Author(s):  
Julia Hsu
2019 ◽  
Vol 35 (4) ◽  
pp. 241-257
Author(s):  
Pooran Joshi ◽  
A. Tolis Voutsas ◽  
John Hartzell

2016 ◽  
Vol 81 (3) ◽  
pp. 662-668 ◽  
Author(s):  
Junhui Weng ◽  
Weibo Chen ◽  
Wei Xia ◽  
Jian Zhang ◽  
Yulong Jiang ◽  
...  

2016 ◽  
Vol 124 (5) ◽  
pp. 510-514 ◽  
Author(s):  
Hirokazu CHIBA ◽  
Ken-ichi TADA ◽  
Taishi FURUKAWA ◽  
Toshiki YAMAMOTO ◽  
Tadahiro YOTSUYA ◽  
...  

2018 ◽  
Vol 502 ◽  
pp. 152-158 ◽  
Author(s):  
M.G. Syamala Rao ◽  
M.A. Pacheco-Zuñiga ◽  
L.A. Garcia-Cerda ◽  
G. Gutiérrez-Heredia ◽  
J.A. Torres Ochoa ◽  
...  

Author(s):  
M. A. Kirk ◽  
M. C. Baker ◽  
B. J. Kestel ◽  
H. W. Weber

It is well known that a number of compound superconductors with the A15 structure undergo a martensite transformation when cooled to the superconducting state. Nb3Sn is one of those compounds that transforms, at least partially, from a cubic to tetragonal structure near 43 K. To our knowledge this transformation in Nb3Sn has not been studied by TEM. In fact, the only low temperature TEM study of an A15 material, V3Si, was performed by Goringe and Valdre over 20 years ago. They found the martensite structure in some foil areas at temperatures between 11 and 29 K, accompanied by faults that consisted of coherent twin boundaries on {110} planes. In pursuing our studies of irradiation defects in superconductors, we are the first to observe by TEM a similar martensite structure in Nb3Sn.Samples of Nb3Sn suitable for TEM studies have been produced by both a liquid solute diffusion reaction and by sputter deposition of thin films.


2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.


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