scholarly journals Electrically Detected Magnetic Resonance Study of High-Field Stress Induced Si/SiO2 Interface Defects.

2020 ◽  
Author(s):  
Stephen Moxim ◽  
Patrick Lenahan ◽  
Fedor Sharov ◽  
Gad Haase ◽  
David Hughart
Keyword(s):  
Magnetic Resonance ◽  
High Field ◽  
Magnetic Resonance Study ◽  
Field Stress ◽  
Interface Defects ◽  
Electrically Detected Magnetic Resonance

(Invited) Interface Defects in C-face 4H-SiC MOSFETs: An Electrically-Detected-Magnetic-Resonance Study

2017 ◽  
Vol 80 (1) ◽  
pp. 147-153 ◽  
Author(s):  
Takahide Umeda ◽  
Mitsuo Okamoto ◽  
Hironori Yoshioka ◽  
Geon Woo Kim ◽  
Shijie Ma ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Magnetic Resonance Study ◽  
Interface Defects ◽  
Electrically Detected Magnetic Resonance

C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance

2014 ◽  
Vol 778-780 ◽  
pp. 414-417 ◽  
Author(s):  
Takahide Umeda ◽  
Mitsuo Okamoto ◽  
Ryo Arai ◽  
Yoshihiro Satoh ◽  
Ryouji Kosugi ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Interface Defects ◽  
Electrically Detected Magnetic Resonance

This paper reports an EDMR (electrically detected magnetic resonance) observation on 4H-SiC(000-1) “C face” MOSFETs. We found a new strong EDMR signal in wet-oxidized C-face 4H-SiC MOSFETs, which originates from intrinsic interface defects on C-face SiC-SiO2 structures.

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