scholarly journals Electrically Detected Magnetic Resonance Study of High-Field Stress Induced Si/SiO2 Interface Defects.

2020 ◽  
Author(s):  
Stephen Moxim ◽  
Patrick Lenahan ◽  
Fedor Sharov ◽  
Gad Haase ◽  
David Hughart



2020 ◽  
Author(s):  
Stephen Moxim ◽  
Patrick Lenahan ◽  
Fedor Sharov ◽  
Gad Haase ◽  
David Hughart


2020 ◽  
Vol 116 (17) ◽  
pp. 171602
Author(s):  
E. Higa ◽  
M. Sometani ◽  
H. Hirai ◽  
H. Yano ◽  
S. Harada ◽  
...  




2017 ◽  
Vol 80 (1) ◽  
pp. 147-153 ◽  
Author(s):  
Takahide Umeda ◽  
Mitsuo Okamoto ◽  
Hironori Yoshioka ◽  
Geon Woo Kim ◽  
Shijie Ma ◽  
...  


2014 ◽  
Vol 778-780 ◽  
pp. 414-417 ◽  
Author(s):  
Takahide Umeda ◽  
Mitsuo Okamoto ◽  
Ryo Arai ◽  
Yoshihiro Satoh ◽  
Ryouji Kosugi ◽  
...  

This paper reports an EDMR (electrically detected magnetic resonance) observation on 4H-SiC(000-1) “C face” MOSFETs. We found a new strong EDMR signal in wet-oxidized C-face 4H-SiC MOSFETs, which originates from intrinsic interface defects on C-face SiC-SiO2 structures.



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