ABSTRACTExisting theories of irradiation-induced grain growth assume that growth occurs by the boundary migration mechanism commonly observed for thermal growth and that it is only the point defects generated si boundaries during the irradiation which are responsible for boundary migration. In contrast, in situ observations during ion irradiation of Au films at temperatures less than 20 K even have clearly demonstrated that growth occurs both by boundary migration and by grain coalescence. Here we present further evidence for the latter. Furthermore, the substantial defect cluster activity observed during irradiation suggests that dislocations play a significant role in the growth phenomenon. Here, we also demonstrate qualitatively that glide of such dislocations to or “through” a boundary can produce essentially the same effect on boundary position or structure that the original point defects would have had if they had migrated individually to or through the boundary. Via dislocation motion, point defects originating far from a boundary may induce boundary migration or boundary structure change, and hence, grain growth.
IN-SITU ION IRRADIATION TO ADD IRRADIATION ASSISTED GRAIN GROWTH TO THE MARMOT TOOL