Abstract
The main objective is to develop sensing systems by integrating transducers such as pressure sensing elements with the interface circuitry in one package that can withstand harsh environments, particularly high temperatures up to 600 °C. To achieve that, both pressure transducer and interface circuitry are individually required to operate and survive up to 600 °C with acceptable degrees of reliability. This paper reports performance evaluation of fabricated 4H-SiC JFETs along with differential pairs for use in the interface circuitry. The test results are very promising and show stable performances from 25 °C up to 600 °C. Moreover, design, fabrication, and early test of a SiC based circular diaphragm type pressure transducer is also reported.
Evaluation of test results for thin-film pressure transducer