scholarly journals GROWTH CHARACTERISTICS OF TYPE E CLOSTRIDIUM BOTULINUM IN THE TEMPERATURE RANGE OF 34 TO 50 F.

1966 ◽  
Author(s):  
Keyword(s):  
Clostridium Botulinum ◽  
Growth Characteristics ◽  
Temperature Range

The Characterization of Initial Growth of Polycrystalline Silicon Germanium Films on Zirconium Oxide

2001 ◽  
Vol 686 ◽  
Author(s):  
Dong-Won Kim ◽  
Freek Prins ◽  
Kil-Soo Ko ◽  
C. H. Lee ◽  
Dim-Lee Kwong ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Photoelectron Spectroscopy ◽  
Silicon Germanium ◽  
Interface Reaction ◽  
Chemical Vapor ◽  
Sige Layer ◽  
Growth Characteristics ◽  
Initial Growth ◽  
Temperature Range ◽  
Transmission Electron

AbstractIn this study, the initial growth characteristics of a SiGe film realized by ultrahigh-vacuum chemical vapor deposition (UHV CVD) using GeH4 and Si2H6 on high-K gate oxide, ZrO2, has been investigated in the temperature range from 475°C to 550°C. The influence of surface reactions on growth characteristics such as the incubation of growth, roughness of the SiGe layer, and the interface reaction of the SiGe film with ZrO2were studied using atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). From our analysis we conclude that ZrO2 reacts with Si and forms zirconium silicide in the temperature range between 500°C and 550°C. The surface roughness of amorphous SiGe layers increase from 0.5nm to 1.5nm by increasing Ge content from 0.1 to 0.3. A further increase of surface roughness is observed from less than 1nm to 5nm as SiGe layer transitions from an amorphous to a poly crystalline layer.

Defects in ion implanted silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 386-387
Author(s):  
J.A. Lambert ◽  
P.S. Dobson
Keyword(s):  
Defect Structure ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Burgers Vector ◽  
Temperature Range ◽  
Perfect Dislocation ◽  
Contrast Analysis ◽  
Image Position ◽  
Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

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