scholarly journals Heterogeneous Wafer Bonding Technologies of III-V Semiconductor to Si Substrates and Applications for Light Sources

2020 ◽  
Vol 42 (3) ◽  
pp. 240
Author(s):  
Nobuhiko NISHIYAMA
Keyword(s):  
Wafer Bonding ◽  
Light Sources ◽  
Si Substrates

Fabrication of CoSi2-Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding

2003 ◽  
Vol 42 (Part 1, No. 6B) ◽  
pp. 3942-3945 ◽  
Author(s):  
Shusaku Yamamura ◽  
Shouichi Yamauchi ◽  
Satoru Watanabe ◽  
Michiharu Tabe ◽  
Toshio Kasai ◽  
...  
Keyword(s):  
Absorption Spectroscopy ◽  
Wafer Bonding ◽  
Metal Layer ◽  
Si Substrates ◽  
Infrared Reflection Absorption Spectroscopy ◽  
Infrared Reflection

Nanodiamond resonators fabricated on 8″ Si substrates using adhesive wafer bonding

2017 ◽  
Vol 27 (6) ◽  
pp. 065011 ◽  
Author(s):  
V Lebedev ◽  
T Lisec ◽  
T Yoshikawa ◽  
M Reusch ◽  
D Iankov ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Si Substrates

Integration of InGaN-based Optoelectronics with Dissimilar Substrates by Wafer Bonding and Laser Lift-off

2001 ◽  
Vol 681 ◽  
Author(s):  
William S. Wong ◽  
Michael Kneissl ◽  
David W. Treat ◽  
Mark Teepe ◽  
Naoko Miyashita ◽  
...  
Keyword(s):  
Thin Film ◽  
Wafer Bonding ◽  
Device Performance ◽  
Light Emitting ◽  
Si Substrates ◽  
Substrate Removal ◽  
Transparent Substrate ◽  
Before And After ◽  
Lift Off

ABSTRACTInGaN-based optoelectronics have been integrated with dissimilar substrate materials using a novel thin-film laser lift-off process. By employing the LLO process with wafer-bonding techniques, InGaN-based light emitting diodes (LEDs) have been integrated with Si substrates, forming vertically structured LEDs. The LLO process has also been employed to integrate InGaN-based laser diodes (LDs) with Cu and diamond substrates. Separation of InGaN-based thin-film devices from their typical sapphire growth substrates is accomplished using a pulsed excimer laser in the ultraviolet regime incident through the transparent substrate. Characterization of the LEDs and LDs before and after the sapphire substrate removal revealed no measurable degradation in device performance.

1.3 μm InAs/GaAs quantum dot lasers on Si substrates by low-resistivity, Au-free metal-mediated wafer bonding

2012 ◽  
Vol 112 (3) ◽  
pp. 033107 ◽  
Author(s):  
Tomohiko Tatsumi ◽  
Katsuaki Tanabe ◽  
Katsuyuki Watanabe ◽  
Satoshi Iwamoto ◽  
Yasuhiko Arakawa
Keyword(s):  
Quantum Dot ◽  
Wafer Bonding ◽  
Quantum Dot Lasers ◽  
Low Resistivity ◽  
Si Substrates ◽  
Gaas Quantum Dot ◽  
Free Metal

Cover Picture: Fabrication of electrically pumped InAs/GaAs quantum dot lasers on Si substrates by Au-mediated wafer bonding (Phys. Status Solidi C 8/2)

2011 ◽  
Vol 8 (2) ◽  
pp. n/a-n/a
Author(s):  
Katsuaki Tanabe ◽  
Denis Guimard ◽  
Damien Bordel ◽  
Satoshi Iwamoto ◽  
Yasuhiko Arakawa
Keyword(s):  
Quantum Dot ◽  
Wafer Bonding ◽  
Quantum Dot Lasers ◽  
Si Substrates ◽  
Electrically Pumped ◽  
Gaas Quantum Dot

scholarly journals Electrically pumped 13 μm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer

2010 ◽  
Vol 18 (10) ◽  
pp. 10604 ◽  
Author(s):  
Katsuaki Tanabe ◽  
Denis Guimard ◽  
Damien Bordel ◽  
Satoshi Iwamoto ◽  
Yasuhiko Arakawa
Keyword(s):  
Quantum Dot ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Quantum Dot Lasers ◽  
Layer Transfer ◽  
Si Substrates ◽  
Electrically Pumped ◽  
Gaas Quantum Dot
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