Integration of InGaN-based Optoelectronics with Dissimilar Substrates by Wafer Bonding and Laser Lift-off

2001 ◽  
Vol 681 ◽  
Author(s):  
William S. Wong ◽  
Michael Kneissl ◽  
David W. Treat ◽  
Mark Teepe ◽  
Naoko Miyashita ◽  
...  
Keyword(s):  
Thin Film ◽  
Wafer Bonding ◽  
Device Performance ◽  
Light Emitting ◽  
Si Substrates ◽  
Substrate Removal ◽  
Transparent Substrate ◽  
Before And After ◽  
Lift Off

ABSTRACTInGaN-based optoelectronics have been integrated with dissimilar substrate materials using a novel thin-film laser lift-off process. By employing the LLO process with wafer-bonding techniques, InGaN-based light emitting diodes (LEDs) have been integrated with Si substrates, forming vertically structured LEDs. The LLO process has also been employed to integrate InGaN-based laser diodes (LDs) with Cu and diamond substrates. Separation of InGaN-based thin-film devices from their typical sapphire growth substrates is accomplished using a pulsed excimer laser in the ultraviolet regime incident through the transparent substrate. Characterization of the LEDs and LDs before and after the sapphire substrate removal revealed no measurable degradation in device performance.

Continuous-wave InGaN laser diodes on copper and diamond substrates

2002 ◽  
Vol 17 (4) ◽  
pp. 890-894 ◽  
Author(s):  
William S. Wong ◽  
Michael Kneissl ◽  
David W. Treat ◽  
Mark Teepe ◽  
Naoko Miyashita ◽  
...  
Keyword(s):  
Thin Film ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Light Output ◽  
Maximum Output ◽  
Substrate Removal ◽  
Transparent Substrate ◽  
Before And After ◽  
Lift Off

InGaN-based optoelectronics were integrated with dissimilar substrate materials using a novel thin-film laser lift-off (LLO) process. The LLO process was employed to integrate InGaN-based laser diodes (LDs) with Cu and diamond substrates. Separation of InGaN-based thin-film devices from their typical sapphire growth substrates was accomplished using a pulsed excimer laser in the ultraviolet regime incident through the transparent substrate. Characterization of the LDs before and after the sapphire substrate removal revealed no measurable degradation in device performance. Reduced threshold currents and increased differential quantum efficiences were measured for LDs on Cu due to a 50% reduction of the thermal impedence. Light output for LDs on Cu was two times greater than comparable LDs on sapphire with a maximum output of 100 mW. Increased light output for LDs on diamond was also measured with a maximum output of 80 mW.

Current spreading and thermal effect in thin-film Light-Emitting Diodes for epitaxial lift-off technology

2016 ◽  
Vol 46 (4) ◽  
pp. 044614
Author(s):  
XiaoMin LI ◽  
YueHan ZONG ◽  
Yu JIANG ◽  
Lin BAI ◽  
GuoFeng SONG ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Effect ◽  
Light Emitting Diodes ◽  
Current Spreading ◽  
Light Emitting ◽  
Lift Off

Blue And Yellow Light Emitting Phosphors For Thin Film Electroluminescent Displays

1994 ◽  
Vol 345 ◽  
Author(s):  
Paul H. Holloway ◽  
J.-E. Yu ◽  
Phillip Rack ◽  
Joseph Sebastian ◽  
Sean Jones ◽  
...  
Keyword(s):  
Thin Film ◽  
Luminescence Spectra ◽  
Yellow Light ◽  
Light Emitting ◽  
Technology Center ◽  
Threshold Voltages ◽  
Passivation Layers ◽  
Sputter Deposited ◽  
20 Nm

AbstractFollowing a description of the purpose and participating members in the Phosphor Technology Center of Excellence, research on the growth and characterization of modulation doped ZnS:Mn and of Ca0.95Sr0.05Ga2S4:6%Ce are reported. ZnS:Mn has been grown using MOCVD and incorporation of Mn in 1 to 5 layers from 5 to 20 nm thick separated by layers of pure ZnS from 5 to 50 nm thick. This is shown to result in lower threshold voltages for ACTFELD displays. The luminescence spectra from sputter deposited, cerium-doped thiogallate thin films were measured and the diffusion of thin ZnS passivation layers versus temperature of heat treatment was discussed.

Migration-Enhanced Molecular Beam Epitaxial Growth and Characterization of GaAs on Si Substrates

1988 ◽  
Vol 144 ◽  
Author(s):  
J.H. Kim ◽  
S. Sakai ◽  
J.K. Liu ◽  
G. Raohakrishnan ◽  
S.S. Chang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Cross Sectional ◽  
Light Emitting ◽  
Si Substrates ◽  
Molecular Beam Epitaxial

ABSTRACTWe first report on migration-enhanced molecular beam epitaxial (MEMBE) growth and characterization of the GaAs layers on Si substrates (GaAs/Si). Excellent surface morphology GaAs layers were successfully grown on (100) Sisubstrates misoriented 4 toward [110] direction. The MEMBE growth method isdescribed and material properties are compared with those of normal two-step MBE-grown or in-situ annealed layers. Micrographs of cross-sectional view transmission electron microscopy (TEM) and scanning surface electron microscopy (SEM) of MEMBE-grown GaAs/Si showed dislocation densities of 107 cm-2 over ten times lower than those of two-step MBE-grown or in-situ annealedlayers. AlGaAs/GaAs double heterostructure lasers and light-emitting diodeshave been successfully grown on MEMBE GaAs/Si by both metal organic chemical vapor deposition and liquid phase epitaxy. MOCVD-grown lasers showed peak output power as high as 184 mW/facet, pulsed threshold currents as low as150 mA at 300 K, and differential quantum efficiencies of up to 30 %. The LPE-grown light-emitting diodes showed output powers of 1.5 mW and external quantum efficiencies of 3.3 mW/A per facet.

Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes

2007 ◽  
Vol 90 (16) ◽  
pp. 161115 ◽  
Author(s):  
Y. J. Lee ◽  
P. C. Lin ◽  
T. C. Lu ◽  
H. C. Kuo ◽  
S. C. Wang
Keyword(s):  
White Light ◽  
Wafer Bonding ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Lift Off ◽  
White Light Emitting Diodes

Light-Emitting Characterization of Vacuum Plasma Sprayed Silicon Coatings

2014 ◽  
Vol 602-603 ◽  
pp. 989-992
Author(s):  
Ya Ran Niu ◽  
Xue Bin Zheng ◽  
Xuan Yong Liu ◽  
Heng Ji ◽  
Chuan Xian Ding
Keyword(s):  
Vacuum Plasma Spray ◽  
Light Emitting ◽  
Vacuum Plasma ◽  
Spray Technique ◽  
Before And After ◽  
Raman Measurement ◽  
Silicon Coating ◽  
Plasma Sprayed ◽  
Vapor Treatment

In the present work, the light-emitting property of silicon coating was explored and the related morphologies and chemical structure of silicon coating were characterized. Silicon coating was prepared by vacuum plasma spray technique and chemically treated by HNO3/HF vapor. The coatings before and after the vapor etching were characterized by field emission scanning electron microscopy and micro-raman spectroscopy. The photoluminescence spectra of the silicon coatings treated with different time were examined. It is found that pores of micrometer and microcracks formed on the surface of silicon coatings after the treatment. The treated silicon coatings exhibited room temperature visible photoluminescence with emission wavelength around 650 nm after excitation. The results of micro-raman measurement proved that there were polysilane and oxygen related functional groups appeared on the coating surface after the vapor treatment, which was supposed to be responsible for the photoluminescent phenomena.

Characterization of Thin-film Thermoelectric Micro-modules using Transient Harman ZT Measurement and Near-IR Thermoreflectance

2007 ◽  
Vol 1044 ◽  
Author(s):  
Rajeev Singh ◽  
James Christofferson ◽  
Zhixi Bian ◽  
Joachim Nurnus ◽  
Axel Schubert ◽  
...  
Keyword(s):  
Thin Film ◽  
Heat Load ◽  
Figure Of Merit ◽  
Near Infrared ◽  
Device Performance ◽  
Metal Contacts ◽  
Thermoelectric Figure ◽  
Near Ir ◽  
Harman Technique

AbstractWe characterize several thin film thermoelectric micro-modules composed of 20 µm-thick elements and designed for cooling applications to identify factors that may limit device performance. Thermoelectric figure-of-merit measurements using the transient Harman technique are compared with maximum cooling data under no heat load. Correlation between the two measurements depending on the location of the parasitic joule heating in the module is analyzed. Near-infrared thermoreflectance is used to examine temperature non-uniformity in the module. The temperature distribution on the metal contacts due to the Peltier and Joule effects is obtained non-destructively through the silicon substrate of an active module.

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