scholarly journals Параметры полупроводниковых пленок ZnO, легированных 3d-примесями Mn, Fe

2020 ◽  
Vol 54 (1) ◽  
pp. 18
Author(s):  
М.М. Мездрогина ◽  
А.Я. Виноградов ◽  
Ю.В. Кожанова
Keyword(s):  
High Frequency ◽  
Film Plane ◽  
Defect Concentration ◽  
Magnetic Impurities ◽  
Semiconductor Films ◽  
Easy Magnetization ◽  
Magnetic Parameters ◽  
Semiconductor Matrix ◽  
Wide Gap ◽  
Ordered State

Abstract The effect of Fe and Mn impurities on the magnetic parameters of ZnO wide-gap semiconductor films produced by high-frequency sputtering with wide variations in the defect concentration is studied. The introduction of Mn and Fe magnetic impurities brings about the existence of a magnetically ordered state in the semiconductor matrix, with different positions of the axis of easy magnetization. In the case of doping with Mn, this axis lies perpendicularly to the film plane, and in the case of doping with Fe, this axis lies in the film plane.

scholarly journals Magnetic Parameters for Ultra-high Frequency (UHF) Ferrite Circulator Design

2014 ◽  
Vol 19 (4) ◽  
pp. 399-403 ◽  
Author(s):  
Jaejin Lee ◽  
Yang-Ki Hong ◽  
Changhan Yun ◽  
Woncheol Lee ◽  
Jihoon Park ◽  
...  
Keyword(s):  
High Frequency ◽  
Ultra High Frequency ◽  
Magnetic Parameters

scholarly journals Magnetic Anisotropy Induced by Orbital Occupation States in La0.67Sr0.33MnO3 Film

2021 ◽  
Author(s):  
Huaixiang Wang ◽  
Jinghua Song ◽  
Weipeng Wang ◽  
Yuansha Chen ◽  
Xi Shen ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Film Plane ◽  
Easy Magnetization Axis ◽  
Spin Reorientation ◽  
Easy Magnetization ◽  
Lsmo Film ◽  
Electronic Spin ◽  
Magnetization Axis ◽  
Interfacial States ◽  
Orbital Occupation

Abstract Interface engineering is an effective and feasible method to regulate the magnetic anisotropy of films by altering interfacial states between different films. Using the technique of pulsed laser deposition, we prepared La0.67Sr0.33MnO3 (LSMO) and La0.67Sr0.33MnO3/SrCoO2.5 (LSMO/SCO) films on the (110)-oriented La0.3Sr0.7Al0.65Ta0.35O3 substrates. By covering the SCO film above the LSMO film, we transformed the easy magnetization axis of LSMO from the [001] axis to the [1\(\stackrel{\text{-}}{\text{1}}\)0] axis in the film plane. Based on statistical analyses, we found that the corresponding Mn-Mn ionic distances are different in the two types of LSMO films, causing different distortions of Mn-O octahedron in the LSMO film. In addition, it also induces diverse electronic occupation states in Mn3+ ions. The eg electron of Mn3+ occupies 3z2-r2 and x2-y2 orbitals in the LSMO and LSMO/SCO, respectively. We conclude that the electronic spin reorientation leads to the transformation of the easy magnetization axis in the LSMO films.

The Perpendicular Magnetic Anisotropy and Structure of Sputtered Ag/Co, Pd/Co, and AgPd/Co Multilayered Films

1991 ◽  
Vol 231 ◽  
Author(s):  
Akira Yamaguchi ◽  
We-Hyo Soe ◽  
Ryoichi Yamamoto ◽  
Masonobu Kobayashi
Keyword(s):  
Magnetic Anisotropy ◽  
Room Temperature ◽  
Perpendicular Magnetic Anisotropy ◽  
Film Plane ◽  
Easy Magnetization Axis ◽  
Easy Magnetization ◽  
Multilayered Films ◽  
Preferred Direction ◽  
Magnetization Axis ◽  
Opposite Tendency

AbstractThe structural and magnetic properties of sputtered Ag/Co, Pd/Co, and AgPd/Co multilayered films were investigated. When substrate temperature during deposition (Ts) was set at room temperature, the easy magnetization axis of the Pd/Co films with Co thickness less than 7Å was normal to the film plane and that of the Ag/Co films was parallel. AgPd/Co multilayered films showed a transition of the preferred direction of magnetic moment from lying in the film plane towards lying along the film normal when increasing the Pd concentration above 81 at%. Moreover, an anomalous reduction of the saturation magnetization was found. The perpendicular magnetic anisotropy of Pd/Co films with low Ts increased with decreasing the thickness of Co layer. However, the Pd/Co films with high Ts showed opposite tendency.

Crystallographic and Magnetic Properties of CoCrPt Thin Films Investigated Using Single-Crystal Perpendicular Magnetic Thin Film Samples

2002 ◽  
Vol 721 ◽  
Author(s):  
Masaaki Futamoto ◽  
Kouta Terayama ◽  
Katsuaki Sato ◽  
Nobuyuki Inaba ◽  
Yoshiyuki Hirayama
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Single Crystal ◽  
Film Plane ◽  
Magnetic Thin Film ◽  
X Ray Diffraction ◽  
Easy Magnetization ◽  
Transmission Electron ◽  
Magnetization Axis

AbstractConditions to prepare good single-crystal CoCrPt magnetic thin film with the easy magnetization axis perpendicular to the film plane were investigated using oxide single-crystal substrates, Al2O3(0001), LaAlO3(0001), mica(0001), SrTiO3(111), and MgO(111). The best CoCrPt(0001) single-crystal thin film was obtained on an Al2O3(0001) substrate employing a non-magnetic CoCrRu underlayer. The crystallographic quality of single-crystal thin film was investigated using X-ray diffraction and high-resolution transmission electron microscopy. Some intrinsic magnetic properties (Hk, Ku) were determined for the single-crystal CoCrxPty thin films for a compositional range of x=17-20at% and y=0-17at%.

Appearance of copper d9 defect centres in wide-gap CdSe nanoparticles: A high-frequency EPR study

2005 ◽  
Vol 242 (4) ◽  
pp. 829-835 ◽  
Author(s):  
N. R. J. Poolton ◽  
G. M. Smith ◽  
P. C. Riedi ◽  
J. W. Allen ◽  
A. V. Firth ◽  
...  
Keyword(s):  
High Frequency ◽  
Cdse Nanoparticles ◽  
Wide Gap ◽  
Defect Centres

Domain Structure and Transient Photoconductivity in Ordered Ga0.47In0.53As Epitaxial Films

1996 ◽  
Vol 441 ◽  
Author(s):  
S. P. Ahrenkiel ◽  
R. K. Ahrenkiel ◽  
D. J. Arent
Keyword(s):  
Domain Structure ◽  
High Frequency ◽  
Film Plane ◽  
Epitaxial Films ◽  
Incident Power ◽  
Yag Laser ◽  
Carrier Lifetimes ◽  
Transient Photoconductivity ◽  
Photoconductivity Decay ◽  
Diffraction Patterns

AbstractWe examine the influences of spontaneous atomic ordering and the associated subvariant domain structure on the transient photoconductivity in epitaxial Ga0.47In0.53As films grown by MOCVD on InP 2°-<110>. Ultra-high frequency photoconductivity decay is used to measure carrier lifetimes in ordered and disordered material following excitation with a YAG laser. Ordered material shows an extended lifetime of 18–186 gis that decreases with incident power. Strongly ordered material showed two CuPt-B subvariants in TEM diffraction patterns and images. Ordering in the first 0.5 μm of growth consists of a fine, interwoven structure with the subvariants closely associated. The subvariants then segregate into imperfectly ordered columnar superdomains that form a mosaic in the film plane with numerous order/order interfaces. In addition, order/disorder interfaces form within and adjacent to the partially ordered superdomains. We attribute the extended transient photoconductivity lifetime in ordered samples to trapping effects that result from the subvariant domain structure.

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