Углеродные наноструктуры на полупроводниковой подложке
Keyword(s):
AbstractThe analytical expressions for the density of states and the occupation numbers are obtained for simple models of carbon nanostructures (graphene–boron nitride lateral heterostructure, decorated zigzag edges of semi-infinity graphene and graphene nanoribbons, and decorated carbyne). The main attention is placed to the strong-coupling regime of the nanostructures with a semiconducting substrate. The numerical estimations are given for the SiC substrate.
2018 ◽
Vol 44
(21)
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pp. 55
2006 ◽
Vol 20
(15)
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pp. 2189-2221
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2014 ◽
Vol 614
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pp. 57-61
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