Зарождение алмаза из активируемой газовой фазы

The thermodynamically metastable diamond nucleation in the volume of activated vapor phase and on nondiamond materials surfaces, as well, have been considered. Basic factors influencing for emerging diamond phase surface energy reducing and for the activation energy for addition to a building blocks nucleus lowering are considered. The importance of experimentally revealed regularities for instance for nanocrystalline submicrometerr diamond film synthesis was stressed.

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Diagnostics of plasma ball formed in high pressure microwave plasma for diamond film synthesis

Diamond and Related Materials ◽

10.1016/s0925-9635(01)00632-x ◽

2002 ◽

Vol 11 (3-6) ◽

pp. 562-566 ◽

Cited By ~ 8

Author(s):

M. Nagatsu ◽

M. Makino ◽

M. Tanga ◽

H. Sugai

Keyword(s):

High Pressure ◽

Diamond Film ◽

Microwave Plasma ◽

Film Synthesis

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Diamond film synthesis on Mo in thermal RF plasma

Diamond and Related Materials ◽

10.1016/0925-9635(92)90035-m ◽

1992 ◽

Vol 1 (2-4) ◽

pp. 255-261 ◽

Cited By ~ 17

Author(s):

R. Hernberg ◽

T. Lepisto¨ ◽

T. Ma¨ntyla¨ ◽

T. Stenberg ◽

J. Vattulainen

Keyword(s):

Diamond Film ◽

Rf Plasma ◽

Film Synthesis ◽

Thermal Rf Plasma

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Vapor Phase Surface Functionalization using Atomic Layer Deposition (ALD) and Self Assembled Molecules (SAMs)

ECS Meeting Abstracts ◽

10.1149/ma2013-02/24/1861 ◽

2013 ◽

Keyword(s):

Atomic Layer Deposition ◽

Vapor Phase ◽

Surface Functionalization ◽

Atomic Layer ◽

Layer Deposition ◽

Self Assembled ◽

Phase Surface

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Downstream Plasma Activated Etching of IIIV Compound Semiconductorsa

MRS Proceedings ◽

10.1557/proc-144-519 ◽

1988 ◽

Vol 144 ◽

Author(s):

R. Iyer ◽

D.L. Lile

Keyword(s):

Activation Energy ◽

Apparent Activation Energy ◽

Mass Spectrometer ◽

Vapor Phase ◽

Compound Semiconductors ◽

Power Input ◽

Reaction Process ◽

Rf Power ◽

Carrier Gas ◽

Etch Rates

ABSTRACTWe have demonstrated a novel downstream plasma activated vapor phase etching of III-V compound semiconductors using ethylene di bromide as the etchant. Highly reproducible surfaces and etch rates were obtained by monitoring the reaction process with a mass spectrometer. Etch rates on InP of up to 4500Å/min, at temperatures as low as 160°C, at an rf power input of 25 watts were achieved with no evident damage to the surface as indicated by PL measurements. Apparent activation energy measurements seem to suggest that the etch products might be organometallic in nature, in contrast to inorganic etch products seen in most etching studies. Etching is partially anisotropic and resulted in smoother surfaces when H2 was used as the carrier gas for the etchant instead of N2.

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