Влияние метода формирования высокоомного буферного слоя GaN на свойства гетероструктур InAlN/GaN и AlGaN/GaN с двумерным электронным газом
2018 ◽
Vol 44
(13)
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pp. 51
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AbstractAlGaN/AlN/GaN and InAlN/AlN/GaN structures with 2D electron gas have been grown on sapphire substrates by metal-organic vapor-phase epitaxy. The suppression of the parasitic conductivity of buffer GaN layers was provided either by intentionally raising the density of edge dislocations or by doping with iron (GaN:Fe). It was shown that using GaN buffer layers with a better crystal perfection and more planar surface results in the electron mobility in the 2D channel for carriers becoming 1.2–1.5 times higher.
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1998 ◽
Vol 191
(4)
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pp. 641-645
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2005 ◽
Vol 44
(6A)
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pp. 3798-3802
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2008 ◽
Vol 47
(4)
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pp. 2828-2832
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