Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.3798 ◽

2005 ◽

Vol 44 (6A) ◽

pp. 3798-3802 ◽

Author(s):

Hiroki Sugiyama ◽

Haruki Yokoyama ◽

Hideaki Matsuzaki ◽

Takatomo Enoki ◽

Takashi Kobayashi

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Organic Vapor ◽

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High-electron-mobility In0.53Ga0.47As/In0.8Ga0.2As composite-channel modulation-doped structures grown by metal-organic vapor-phase epitaxy

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) ◽

10.1109/iciprm.2010.5516265 ◽

2010 ◽

Author(s):

Hiroki Sugiyama ◽

Hideaki Matsuzaki ◽

Haruki Yokoyama ◽

Takatomo Enoki

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Channel Modulation ◽

Composite Channel ◽

Organic Vapor ◽

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High mobility AlInAs/InP high electron mobility transistor structures grown by organometallic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.105295 ◽

1991 ◽

Vol 59 (12) ◽

pp. 1485-1487 ◽

Author(s):

L. Aina ◽

M. Mattingly ◽

M. Burgess ◽

R. Potter ◽

J. M. O’Connor

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Mobility ◽

High Electron Mobility Transistor ◽

Vapor Phase Epitaxy ◽

High Electron ◽

Organometallic Vapor Phase Epitaxy ◽

High Electron Mobility

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High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2828 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2828-2832 ◽

Author(s):

Hiroki Sugiyama ◽

Toshihiko Kosugi ◽

Haruki Yokoyama ◽

Koichi Murata ◽

Yasuro Yamane ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Performance ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Organic Vapor ◽

Electron Mobility Transistors ◽

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High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy

10.7567/ssdm.2007.g-3-2 ◽

2007 ◽

Author(s):

Hiroki Sugiyama ◽

Toshihiko Kosugi ◽

Haruki Yokoyama ◽

Koichi Murata ◽

Yasuro Yamane ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Performance ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Organic Vapor ◽

Electron Mobility Transistors ◽

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Electron mobility enhancement in metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors by control of surface morphology of spacer layer

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.01ad01 ◽

2017 ◽

Vol 57 (1S) ◽

pp. 01AD01 ◽

Author(s):

Atsushi Yamada ◽

Tetsuro Ishiguro ◽

Junji Kotani ◽

Norikazu Nakamura

Keyword(s):

Surface Morphology ◽

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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AlGaAs/GaAs double‐heterojunction high electron mobility transistors grown by low‐pressure organometallic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.345244 ◽

1990 ◽

Vol 67 (1) ◽

pp. 550-552 ◽

Author(s):

Rong‐Ting Huang ◽

Yung‐Yi Tu ◽

Dumrong Kasemset ◽

N. Nouri ◽

C. Colvard ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

High Electron ◽

Organometallic Vapor Phase Epitaxy ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Heterojunction

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Advantages of the AlGaN spacer in InAlN high-electron-mobility transistors grown using metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.05fk03 ◽

2016 ◽

Vol 55 (5S) ◽

pp. 05FK03 ◽

Author(s):

Atsushi Yamada ◽

Tetsuro Ishiguro ◽

Junji Kotani ◽

Shuichi Tomabechi ◽

Norikazu Nakamura ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.1790073 ◽

2004 ◽

Vol 85 (10) ◽

pp. 1710-1712 ◽

Author(s):

M. Miyoshi ◽

H. Ishikawa ◽

T. Egawa ◽

K. Asai ◽

M. Mouri ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility

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Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses

physica status solidi (a) ◽

10.1002/pssa.201900760 ◽

2020 ◽

Vol 217 (7) ◽

pp. 1900760

Author(s):

Eric Frayssinet ◽

Luan Nguyen ◽

Marie Lesecq ◽

Nicolas Defrance ◽

Maxime Garcia Barros ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Vapor Phase Epitaxy ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metalorganic Chemical

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High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2017.11.004 ◽

2018 ◽

Vol 483 ◽

pp. 89-93 ◽

Author(s):

M. Charles ◽

Y. Baines ◽

A. Bavard ◽

R. Bouveyron

Keyword(s):

Growth Rate ◽

Vapor Phase ◽

High Growth ◽

High Electron Mobility Transistors ◽

High Growth Rate ◽

High Electron ◽

High Electron Mobility ◽

Organic Vapor ◽

Electron Mobility Transistors ◽

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