scholarly journals Analisa Magnetoresistance Berbasis Lapisan Tipis Giant Magnetoresistance (GMR) Pada Nanopartikel Cobalt Ferrite (CoFe2O4) Dilapisi Polyethylen Glicol (PEG)

2017 ◽  
Vol 20 (1) ◽  
pp. 6
Author(s):  
Novi Susanti ◽  
Edi Suharyadi
Keyword(s):  
Giant Magnetoresistance ◽  
Cobalt Ferrite ◽  
Spin Valve ◽  
Probe Method ◽  
Free Layer

Telah dilakukan pengukuran magnetoresistance pada lapisan tipis spin valve GMR yang memiliki struktur CoFeB/Cu/CoFe/MnIr dengan memvariasikan ketebalan lapisan barrier Cu (2,2 dan 2,8 nm) dan free layer CoFeB (7 dan 10 nm) menggunakan System Four Point Probe Method (SFPPM) pada medan eksternal 0 600 gauss. Dihasilkan perubahan range resistansi (69,29-71,74) Ω untuk Cu 2,2 nm dan (38,5-40,47) Ω untuk ketebalan Cu 2,8 nm. Pada variasi ketebalan CoFeB dihasilkan perubahan range resistansi untuk ketebalan 7 nm dan 10 nm masing masing adalah (38,74-41,11) Ω dan (69,29-71,74) Ω. Selanjutnya lapisan tipis digunakan sebagai sensor magnetik untuk mendeteksi kehadiran nanopartikel CoFe2O4, CoFe2O4 yang dimodifikasi PEG dan CoFe2O4 termodifikasi PEG yang telah mengikat biomolekul formalin. Terjadi pergeseran nilai resistansi ketika lapisan tipis dilapisi nanopartikel magnetik tersebut. Hal ini menunjukkan bahwa lapisan tipis GMR mampu mendeteksi prilaku spin pada nanopartikel magnetik CoFe2O4. 

Insertion of a Specular Reflective and Transmissive Nano-Oxide Layer into Giant Magnetoresistance Spin-Valve Structure

2006 ◽  
Vol 6 (11) ◽  
pp. 3483-3486
Author(s):  
Chunghee Nam ◽  
Youngman Jang ◽  
Ki-Su Lee ◽  
Jungjin Shim ◽  
B. K. Cho
Keyword(s):  
Oxide Layer ◽  
Sheet Resistance ◽  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Interlayer Coupling ◽  
Free Layer ◽  
Uniform Layer ◽  
Nano Oxide ◽  
Valve Structure ◽  
Current Shunt

We have studied the influence of the insertion of a nano-oxide layer (NOL) into a magnetic GMR spin-valve. It was found that the spin-valve with NOL has a higher GMR ratio than that of the normal spin-valve without NOL. Naturally formed NOL without vacuum break shows a uniform layer, which effectively suppresses the current shunt, resulting in the reduction of the sheet resistance of GMR. The NOL spin-valve also shows a lower interlayer coupling (Hin) than that of the optimal normal spin-valve, which is consistent with AFM measurement showing lower roughness of NOL formed CoFe surface. Based on the advantage of NOL, we succeeded in lowering Hin while maintaining GMR ratio by insertion of NOL inside the CoFe free layer, where the free layer consists of CoFe/NOL/CoFe/NOL/Capping layer.

Which spin valve for next giant magnetoresistance head generation? (invited)

2000 ◽  
Vol 87 (9) ◽  
pp. 5377-5382 ◽  
Author(s):  
Satoru Araki ◽  
Masashi Sano ◽  
Shuxiang Li ◽  
Yoshihiro Tsuchiya ◽  
Olivier Redon ◽  
...  
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve

Low resistance spin-valve-type current-perpendicular-to-plane giant magnetoresistance with Co75Fe25

2005 ◽  
Vol 97 (10) ◽  
pp. 10C507 ◽  
Author(s):  
Ken-ichi Aoshima ◽  
Nobuhiko Funabashi ◽  
Kenji Machida ◽  
Yasuyoshi Miyamoto ◽  
Kiyoshi Kuga
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Low Resistance ◽  
Current Perpendicular To Plane

High-sensitive hysteresisless spin valve with a composite free layer

2012 ◽  
Vol 113 (4) ◽  
pp. 341-348 ◽  
Author(s):  
V. V. Ustinov ◽  
M. A. Milyaev ◽  
L. I. Naumova ◽  
V. V. Proglyado ◽  
N. S. Bannikova ◽  
...  
Keyword(s):  
Spin Valve ◽  
Free Layer

Sensitivity enhancement of a giant magnetoresistance alternating spin-valve sensor for high-field applications

2012 ◽  
Vol 111 (7) ◽  
pp. 07E504 ◽  
Author(s):  
Seungha Yoon ◽  
Youngman Jang ◽  
Chunghee Nam ◽  
Seungkyo Lee ◽  
Joonhyun Kwon ◽  
...  
Keyword(s):  
High Field ◽  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Sensitivity Enhancement

Time Dependent Magnetic Switching in Spin Valve Structures

1995 ◽  
Vol 384 ◽  
Author(s):  
J. B. Restorff ◽  
M. Wun-Fogle ◽  
S. F. Cheng ◽  
K. B. Hathaway
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Time History ◽  
Time Dependent ◽  
Si Substrates ◽  
Magnetic Switching ◽  
Magnetic Aftereffect ◽  
Magnetron Sputter Deposition ◽  
History Of ◽  
Time Required

ABSTRACTWe have observed time dependent magnetic switching in spin-valve sandwich structures of Cu/Co/Cu/Fe films grown on silicon and Kapton substrates and Permalloy/Co/Cu/Co films grown on NiO or NiO/CoO coated Si substrates. The giant magnetoresistance (MR) values ranged from 1 to 3 percent at room temperature. The films were grown by DC magnetron sputter deposition. Measurements were made on the time required for the MR to stabilize to about 1 part in 104 after the applied field was incremented. This time depends almost linearly on the amplitude of the timedependent MR change with a slope (time / ΔMR) of 20 000 to 30 000 s. Some samples took as long as 70 s to stabilize. The time dependent effects may be important for devices operating in these regions of the magnetoresistance curve. In addition, measurements were made on the time history of the MR value for a period of 75 s following a step change in the field from saturation. We observed that the time dependent behavior of the MR values of both experiments produced an excellent fit to a function of the form ΔMR(t) = α + β;ln(t) where ɑ and β are constants. This time dependence was consistent with the behavior of the magnetic aftereffect.

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