ИССЛЕДОВАНИЕ ПРОЦЕССА ГЛУБОКОГО ТРАВЛЕНИЯ КРЕМНИЯ С МИНИМАЛЬНОЙ ШЕРОХОВАТОСТЬЮ СТЕНОК И ДНА СТРУКТУР

Я.А. Мирошкин

doi:10.22184/1993-8578.2020.13.3s.668.675

ИССЛЕДОВАНИЕ ПРОЦЕССА ГЛУБОКОГО ТРАВЛЕНИЯ КРЕМНИЯ С МИНИМАЛЬНОЙ ШЕРОХОВАТОСТЬЮ СТЕНОК И ДНА СТРУКТУР

Nanoindustry Russia ◽

10.22184/1993-8578.2020.13.3s.668.675 ◽

2020 ◽

Vol 96 (3s) ◽

pp. 668-675

Author(s):

Я.А. Мирошкин

Keyword(s):

Analytical Model ◽

Phenomenological Description ◽

Silicon Etching ◽

Anisotropic Silicon Etching

Данная работа посвящена исследованию процессов глубокого анизотропного травления кремния. В качестве предложенных методов были проанализированы два подхода - Bosch и Cryo. Представлено феноменологическое описание вышеупомянутых методов, проведен анализ эксперимента по криогенному травлению кремния, полученный на базе ФТИАН, также предложена аналитическая модель Cryo-процесса. This work is devoted to the study of the processes of deep anisotropic silicon etching. Two approaches (Bosch and Cryo) have been analyzed as proposed methods. The phenomenological description of the above mentioned methods has been presented, the analysis of the experiment on cryogenic etching of silicon obtained on the basis of FTIAN has been carried out, as well as an analytical model of Cryo process has been proposed.

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Feasibility to Fabricate the 45° Slant with Anisotropic Silicon Etching in NaOH Solution

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.503-504.615 ◽

2012 ◽

Vol 503-504 ◽

pp. 615-619 ◽

Cited By ~ 1

Author(s):

Alonggot Limcharoen ◽

Chupong Pakpum ◽

Pichet Limsuwan

Keyword(s):

Data Storage ◽

Etch Rate ◽

Silicon Etching ◽

Naoh Solution ◽

Conventional Photolithography ◽

Sio2 Mask ◽

P Type ◽

Anisotropic Silicon Etching ◽

Wet Etch ◽

Laser Light Source

The experiments to study the feasibility to fabricate the 45 slant on p-type (100)-oriented silicon wafer were done. The various mask shapes, rectangular, cross, circle and boomerang, were patterned on the SiO2 mask by utilizing the conventional photolithography and dry etching process for investigating the anisotropic wet etch characteristic. The edge of masks were align in two crystal direction, 110 and 100 that is allowable to get a better understanding about the crystal orientation and the angle between planes in a crystal system. The very low etch rate,  50 nm/min, process regime was selected to fabricate the 45 slant with the concept is the lowest of an overall etch rate in the system to reach the level that is possible to detect the (110) plane. The etch recipe can be used for the next development work to built a housing of the laser light source for applying in a data storage technology.

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