scholarly journals Implementation of 6T-SRAM Cell using Conventional and Adiabatic Logic

Author(s):  
Irfan M. Trasgar
Keyword(s):  
2020 ◽  
pp. 1546-1552
Author(s):  
Mayilsamy M ◽  
Saravanakumar M ◽  
Rukkumani V ◽  
Sharmila B ◽  
Srinivasan K
Keyword(s):  

2020 ◽  
Vol 1716 ◽  
pp. 012039
Author(s):  
Ramya sri Penugonda ◽  
V Ravi
Keyword(s):  

2019 ◽  
Vol 7 (2) ◽  
pp. 1
Author(s):  
M. K. SAINI ◽  
N. PANDEY ◽  
NITISH ◽  
◽  
◽  
...  

2012 ◽  
Vol 1 (2) ◽  
pp. 36-49
Author(s):  
A. Kishore Kumar ◽  
D. Somasundareswari ◽  
V. Duraisamy ◽  
T. Shunbaga Pradeepa

2018 ◽  
Vol 10 (3) ◽  
Author(s):  
K. Srilakshmi ◽  
◽  
A. V. N. Tilak ◽  
K. Srinivasa Rao ◽  
◽  
...  

Author(s):  
Peter Egger ◽  
Stefan Müller ◽  
Martin Stiftinger

Abstract With shrinking feature size of integrated circuits traditional FA techniques like SEM inspection of top down delayered devices or cross sectioning often cannot determine the physical root cause. Inside SRAM blocks the aggressive design rules of transistor parameters can cause a local mismatch and therefore a soft fail of a single SRAM cell. This paper will present a new approach to identify a physical root cause with the help of nano probing and TCAD simulation to allow the wafer fab to implement countermeasures.


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