scholarly journals Epitaxial growth by monolayer restricted galvanic displacement

2012 ◽  
Vol 77 (9) ◽  
pp. 1239-1242
Author(s):  
Rastko Vasilic
Keyword(s):  
Epitaxial Growth ◽  
Deposition Process ◽  
Scanning Tunneling ◽  
Deposit Morphology ◽  
Galvanic Displacement ◽  
Tunneling Microscopy ◽  
Efficient Tool ◽  
Dimensional Growth ◽  
Key Parameter

The development of a new method for epitaxial growth of metals in solution by galvanic displacement of layers pre-deposited by underpotential deposition (UPD) was discussed and experimentally illustrated throughout the lecture. Cyclic voltammetry (CV) and scanning tunneling microscopy (STM) are employed to carry out and monitor a ?quasi-perfect?, two-dimensional growth of Ag on Au(111), Cu on Ag(111), and Cu on Au(111) by repetitive galvanic displacement of underpotentially deposited monolayers. A comparative study emphasizes the displacement stoichiometry as an efficient tool for thickness control during the deposition process and as a key parameter that affects the deposit morphology. The excellent quality of layers deposited by monolayer-restricted galvanic displacement is manifested by a steady UPD voltammetry and ascertained by a flat and uniform surface morphology maintained during the entire growth process.

Study of Epitaxial Growth of Au on Ni(110) by Scanning Tunneling Microscopy

1987 ◽  
Vol 94 ◽  
Author(s):  
Y. Kuk ◽  
P. J. Silverman ◽  
T. M. Buck
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Epitaxial Growth ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

ABSTRACTThe structure of the Au segregated Ni(110)-0.8%Au surface has been studied by scanning tunneling microscopy. The segregated Au layer forms a (7×4) structure with a c(2×4) subunit. At various coverages of Au overlayer, commensurate and incommensurate Au structures were observed. At a coverage of I monolayer, islands and facets assciated with incommensurate Au atoms were observed.

Deposition of epitaxial transition metal carbide films and superlattices by simultaneous direct current metal magnetron sputtering and C60 evaporation

2001 ◽  
Vol 16 (3) ◽  
pp. 633-643 ◽  
Author(s):  
H. Högberg ◽  
J. Birch ◽  
M. P. Johansson ◽  
L. Hultman ◽  
U. Jansson
Keyword(s):  
Epitaxial Growth ◽  
Deposition Process ◽  
Growth Conditions ◽  
Growth Behavior ◽  
Transition Metal Carbide ◽  
Structural Quality ◽  
Metal Carbide ◽  
General Observation ◽  
Better Than

Thin epitaxial TiC and VC films and superlattices have been deposited on MgO(001) by simultaneous sputtering of the metals and evaporation of C60. It was found that epitaxial growth conditions for TiC could be maintained down to a temperature of 100 °C, while the epitaxial growth of VC required 200 °C. Epitaxial VC films were completely relaxed at all growth temperatures, while a change from a relaxed to a strained growth behavior was observed for TiC films. The structural quality of the TiC films was better than for the VC films. A general observation was that a plasma-assisted deposition process yields films with a higher quality and allows epitaxial growth at lower temperatures than for a pure coevaporation process.

Epitaxial Growth of Two-Dimensional Dichalcogenides and Modification of Their Surfaces with Scanning Probe Microscopes

1994 ◽  
Vol 332 ◽  
Author(s):  
Bruce A. Parkinson
Keyword(s):  
Epitaxial Growth ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
Tunneling Microscopy ◽  
Quantum Size ◽  
Atomic Force ◽  
Large Lattice ◽  
Two Dimensional Materials ◽  
Molecular Layers ◽  
Interlayer Bonding

ABSTRACTMethods for epitaxial growth of two dimensional materials are described. The lack of interlayer bonding in these materials allows for epitaxial growth with large lattice mismatches. Growth of MoSe2 on MoS2 (a 5% mismatch) or on SnS2 (10% mismatch) can be demonstrated. Scanning tunneling microscopy (STM) revealed remarkable structures in the epilayer as a result of the large mismatches. A technique using the STM or atomic force microscope (AFM) to selectively remove single molecular layers from the surface of layered materials is also described. The combination of these two technologies may result in the ability to produce nanoscale devices exhibiting quantum size effects.

scholarly journals In situ video-STM studies of the mechanisms and dynamics of electrochemical bismuth nanostructure formation on Au

2016 ◽  
Vol 193 ◽  
pp. 171-185 ◽  
Author(s):  
H. Matsushima ◽  
S.-W. Lin ◽  
S. Morin ◽  
O. M. Magnussen
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Temporal Resolution ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Deposit Morphology ◽  
Tunneling Microscopy ◽  
Atomic Arrangement ◽  
Surface Plane ◽  
Structural Fluctuations

The microscopic mechanisms of Bi electrodeposition on Au(111) and Au(100) electrodes in the overpotential regime were studied by in situ scanning tunneling microscopy with high spatial and temporal resolution. Atomic resolution images of the needle-like Bi(110) deposits formed on Au(111) reveal the central influence of covalent Bi–Bi bonds on the deposit morphology. In the straight steps along the needle edges the Bi atoms are interlinked by these bonds, whereas at the needle tip and at kinks along the needle edges dangling bonds exist, explaining the rapid structural fluctuations at these sites. For ultrathin Bi deposits on Au(100) a more open atomic arrangement was found within the surface plane, which was tentatively assigned to an epitaxially stabilised Bi(111) film. Furthermore, well-defined nanowires, consisting of zigzag chains of Bi surface atoms, were observed on this surface.

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