scholarly journals Observation of Dynamic Image of Pt/Ti Thin Film at High Temperature by In-Situ FE-SEM

2009 ◽  
Vol 73 (12) ◽  
pp. 943-947 ◽  
Author(s):  
Mitsuhiro Wada
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Dynamic Image

In situ high temperature X-ray diffraction studies of ZnO thin film

2011 ◽  
Vol 20 (9) ◽  
pp. 096102 ◽  
Author(s):  
Xiang-Cun Chen ◽  
Jie-Ping Zhou ◽  
Hai-Yang Wang ◽  
Peng-Shou Xu ◽  
Guo-Qiang Pan
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
X Ray

In Situ FT-IR Studies of Oxide and Oxynitride Sol-Gel-Derived Thin Films

1984 ◽  
Vol 32 ◽  
Author(s):  
David M. Haaland ◽  
C. Jeffrey Brinker
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Temperature ◽  
Low Temperatures ◽  
Sol Gel ◽  
Ir Studies ◽  
Oxynitride Glass ◽  
Vibrational Bands ◽  
Ft Ir

ABSTRACTA high-temperature infrared cell was developed to study the gel-to-glass conversion of sol-gel-derived thin films. FT-IR spectra of matched thin-film borosilicate sol-gel samples were taken as the samples were heated at 100°C intervals to 700°C in either air or ammonia. The gels were converted to oxide and oxynitride glasses, respectively, by these heat treatments. The gel-to-glass conversion could be followed and compared for these two treatments by monitoring changes in the vibrational bands present in the spectra. Comparisons between the infrared spectra of NH3-treated and air-treated films heated above 500°C reveal the appearance of new B-N bonds at the expense of B-O-Si bonds for the NH3-fired films. These spectra also exhibit changes which may indicate the formation of Si-N bonds. Thus, ammonolysis reactions can result in thin-film oxynitride glass formation at relatively low temperatures.

scholarly journals Experimental setup for high-temperature in situ studies of crystallization of thin films with atmosphere control

2020 ◽  
Vol 27 (5) ◽  
pp. 1209-1217 ◽  
Author(s):  
Anders Bank Blichfeld ◽  
Kristine Bakken ◽  
Dmitry Chernyshov ◽  
Julia Glaum ◽  
Tor Grande ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Temperature ◽  
High Heating Rate ◽  
Heating Rates ◽  
Maximum Information ◽  
High Heating ◽  
Atmosphere Control ◽  
Sample Environment

Understanding the crystallization process for chemical solution deposition (CSD) processed thin films is key in designing the fabrication strategy for obtaining high-quality devices. Here, an in situ sample environment is presented for studying the crystallization of CSD processed thin films under typical processing parameters using near-grazing-incidence synchrotron X-ray diffraction. Typically, the pyrolysis is performed in a rapid thermal processing (RTP) unit, where high heating rates, high temperatures and atmosphere control are the main control parameters. The presented in situ setup can reach heating rates of 20°C s−1 and sample surface temperatures of 1000°C, comparable with commercial RTP units. Three examples for lead-free ferroelectric thin films are presented to show the potential of the new experimental set-up: high temperature, for crystallization of highly textured Sr0.4Ba0.6Nb2O6 on a SrTiO3 (001) substrate, high heating rate, revealing polycrystalline BaTiO3, and atmosphere control with 25% CO2, for crystallization of BaTiO3. The signal is sufficient to study a single deposited layer (≥10 nm for the crystallized film) which then defines the interface between the substrate and thin film for the following layers. A protocol for processing the data is developed to account for a thermal shift of the entire setup, including the sample, to allow extraction of maximum information from the refinement, e.g. texture. The simplicity of the sample environment allows for the future development of even more advanced measurements during thin-film processing under non-ambient conditions.

High-temperature post-annealing to improve Jc-B-T properties of MgB2 thin film synthesized via hybrid deposition combining thermal evaporation of magnesium and sputtering of boron

2021 ◽  
Author(s):  
Takumu Iwanaka ◽  
Toshiaki Kusunoki ◽  
Hiroshi Kotaki ◽  
Motomune Kodama ◽  
Hideki Tanaka ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Thermal Evaporation ◽  
Copper Substrate ◽  
Mgb2 Film ◽  
Mgb2 Thin Film ◽  
Post Annealing ◽  
Critical Current Density Jc ◽  
Mgb2 Thin Films

Abstract A new in-situ process for depositing MgB2 film is being developed in the present study as a candidate method to facilitate the mass production of MgB2-thin-film superconducting tapes. Here, a MgB2 film was synthesized on a heated copper substrate via “hybrid deposition,” comprising thermal evaporation of magnesium and sputtering of boron. High-temperature post-annealing was performed to increase the critical current density (Jc) of the MgB2 thin films obtained via hybrid deposition. The Jc of the MgB2 film deposited at 360°C by hybrid deposition and post-annealed at 430°C was drastically improved to 1,100 A/mm2 at 20 K under 4 T, 79,000 A/mm2 at 15 K under 3 T, and 59,000 A/mm2 at 10 K under 5 T under a magnetic field parallel to the film. It was expected that the incorporation of hybrid deposition in processing using a reel-to-reel machine would facilitate the synthesis of high-Jc, long MgB2-thin-film superconducting wires.

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

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