scholarly journals Comparison of Flow-Stress Measurements on High-Purity Tungsten Single Crystals with the Kink-Pair Theory

2000 ◽  
Vol 41 (1) ◽  
pp. 152-160 ◽  
Author(s):  
Dieter Brunner
1998 ◽  
Vol 552 ◽  
Author(s):  
M. Hirscher ◽  
D. Schaible

ABSTRACTHigh-purity stoichiometric NiAl single crystals have been prepared by crucible-free inductive zone melting and afterwards well annealed at temperatures below 1200 K. Internal friction measurements of torsionally deformed single crystals show two relaxation maxima at 500 and 800 K which anneal during the measurement. The first maximum can be assigned to the dislocation motion by kinkpair formation and the annealing to pinning of these dislocations by interstitial impurity atoms. The second maximum is attributed to the Snoek-Köster relaxation of dislocations in the presence of mobile interstitial impurity atoms and the annealing to the pinning of dislocations by vacancies. The kink-pair formation enthalpy in NiAl was estimated.


Author(s):  
N.J. Long ◽  
M.H. Loretto ◽  
C.H. Lloyd

IntroductionThere have been several t.e.m. studies (1,2,3,4) of the dislocation arrangements in the matrix and around the particles in dispersion strengthened single crystals deformed in single slip. Good agreement has been obtained in general between the observed structures and the various theories for the flow stress and work hardening of this class of alloy. There has been though some difficulty in obtaining an accurate picture of these arrangements in the case when the obstacles are large (of the order of several 1000's Å). This is due to both the physical loss of dislocations from the thin foil in its preparation and to rearrangement of the structure on unloading and standing at room temperature under the influence of the very high localised stresses in the vicinity of the particles (2,3).This contribution presents part of a study of the Cu-Cr-SiO2 system where age hardening from the Cu-Cr and dispersion strengthening from Cu-Sio2 is combined.


1983 ◽  
Vol 44 (C9) ◽  
pp. C9-691-C9-696 ◽  
Author(s):  
U. Ziebart ◽  
H. Schultz
Keyword(s):  

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