DISLOCATION RELAXATION PEAKS IN HIGH PURITY TUNGSTEN SINGLE CRYSTALS

The recrystallization mechanisms in high purity Ag crystals with C{112}<111> initial orientation, deformed by channel-die compression, have been studied by local orientation measurements using TEM and SEM/EBSD. The microtexture analysis clearly indicates the importance of a simple relation of 25-40o (<111> or <112>) type, which is frequently observed during the early stages of recrystallization between isolated nuclei of uniform orientation and one of the as-deformed groups of components. As recrystallization proceeds, recrystallization twinning increases radically. In C-oriented silver single crystals this latter mechanism also plays a decisive role in the formation of the cube orientation.

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Cyclic Twins in High-Purity Titanium Single Crystals / Zyklische Zwillingsbildung in hochreinen Titan-Einkristallen

Practical Metallography ◽

10.1515/pm-2002-390503 ◽

2002 ◽

Vol 39 (5) ◽

pp. 243-250

Author(s):

Q.Y. Sun ◽

X.L. Tan ◽

R.H. Zhu ◽

H.C. Gu

Keyword(s):

Single Crystals ◽

High Purity ◽

Purity Titanium

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Magnetic properties of the natural and isotope-modified diamond and silicon carbide

EPJ Web of Conferences ◽

10.1051/epjconf/201818504007 ◽

2018 ◽

Vol 185 ◽

pp. 04007 ◽

Cited By ~ 2

Author(s):

A.N. Taldenkov ◽

A.V. Inyushkin ◽

E.A. Chistotina ◽

V.G. Ralchenko ◽

A.P. Bolshakov ◽

...

Keyword(s):

Silicon Carbide ◽

Magnetic Properties ◽

Isotopic Composition ◽

Single Crystals ◽

High Purity ◽

Diamagnetic Susceptibility ◽

Synthetic Diamond ◽

Paramagnetic Centers ◽

Natural Isotopic Composition ◽

Ferromagnetic Component

The magnetic properties of single crystals of synthetic diamond and crystals of silicon carbide were studied. High-purity samples of diamonds synthesized with HPHT and CVD technologies were used. The crystals of silicon carbide were grown by sublimation and industrial technology. Along with samples with a natural isotopic composition, monoisotopic crystals of diamond (99.96% 12C and 99.96% 13C) and silicon carbide (99.993% of 28Si) were studied. On the basis of the data obtained, the diamagnetic susceptibility was determined and the concentration of paramagnetic centers and the content of the ferromagnetic component were evaluated. The results are discussed.

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Positron annihilation in fatigued copper

Canadian Journal of Physics ◽

10.1139/p82-025 ◽

1982 ◽

Vol 60 (2) ◽

pp. 201-204 ◽

Cited By ~ 6

Author(s):

S. Kupca ◽

D. P. Kerr ◽

B. G. Hogg ◽

Z. S. Basinski

Keyword(s):

Single Crystals ◽

Point Defects ◽

High Purity ◽

Low Temperatures ◽

Annealing Process ◽

Simple Diffusion ◽

Diffusion Limited ◽

Annealing Study ◽

Positron Lifetimes ◽

Trapping Process

Positron lifetimes have been measured in an isochronal annealing study of dynamically fatigued, high purity Cu single crystals. Decomposition of the lifetime spectra into two components results in a description of the annealing process in terms of the lifetime and fraction of trapped positrons. Positron lifetimes were also determined at a series of low temperatures (10–300 K) at different stages of annealing. The lifetime of positrons trapped at point defects is found to vary with temperature indicating that a description of the trapping process according to a simple diffusion limited model is not applicable.

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