Direct-patterning of silicon carbide by nanosphere-assisted pulsed laser

In this paper, nanostructured silicon carbide (SiC) thin films are deposited onto glass substrate using pulsed laser deposition technique. Electrical and optical characterizations such as conductivity, resistivity, transmission, Seeback effect, absorption, absorption coefficient, energy band gap, and extinction coefficient as a function of photon energy, and the effect of thin films thickness on transmission are carried out to characterize the prepared samples. Results showed that the prepared SiC thin film is an n-type semiconductor with an indirect bandgap of ~3 eV, 448 nm cutoff wavelength, 3.4395 × 104 cm−1 absorption coefficient and 0.154 extinction coefficient. The surface morphology of the SiC thin films is studied using scanning electron microscope at a substrate temperature of 400 °C and it is found that the grain size of the prepared SiC thin film is about 30 nm. As such, the nano thin films optical and structural characteristics enable the films to be used as gases sensors in many optoelectronic devices such as the environment and ultraviolet photodiode.

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Raman microscopy study of pulsed laser ablation deposited silicon carbide films

Thin Solid Films ◽

10.1016/s0040-6090(98)00994-8 ◽

1998 ◽

Vol 332 (1-2) ◽

pp. 290-294 ◽

Cited By ~ 27

Author(s):

Fortunato Neri ◽

Sebastiano Trusso ◽

Cirino Vasi ◽

Francesco Barreca ◽

Paolo Valisa

Keyword(s):

Silicon Carbide ◽

Laser Ablation ◽

Pulsed Laser ◽

Pulsed Laser Ablation ◽

Microscopy Study ◽

Raman Microscopy

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Fabrication of silicon carbide nanoparticles using picosecond pulsed laser ablation in acetone with characterizations from TEM and XRD

AIP Advances ◽

10.1063/1.5121756 ◽

2019 ◽

Vol 9 (10) ◽

pp. 105011 ◽

Cited By ~ 1

Author(s):

Takumu Yamada ◽

Fumisato Araki ◽

Jun Ishihara ◽

Kensuke Miyajima

Keyword(s):

Silicon Carbide ◽

Laser Ablation ◽

Pulsed Laser ◽

Pulsed Laser Ablation ◽

Silicon Carbide Nanoparticles

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Luminescent amorphous silicon carbide ultrafine nanoparticles fabricated by pulsed-laser ablation

Applied Physics A ◽

10.1007/s00339-017-0888-3 ◽

2017 ◽

Vol 123 (4) ◽

Cited By ~ 4

Author(s):

Jun Zhu ◽

Shan Hu ◽

Wei Wang ◽

Wei-wei Xia ◽

Hai-tao Chen ◽

...

Keyword(s):

Silicon Carbide ◽

Laser Ablation ◽

Amorphous Silicon ◽

Pulsed Laser ◽

Pulsed Laser Ablation ◽

Amorphous Silicon Carbide

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Generation of microcones on reaction-bonded silicon carbide by nanosecond pulsed laser irradiation

The International Journal of Advanced Manufacturing Technology ◽

10.1007/s00170-019-04672-4 ◽

2019 ◽

Vol 108 (4) ◽

pp. 1039-1048

Author(s):

Tushar Meshram ◽

Jiwang Yan

Keyword(s):

Silicon Carbide ◽

Laser Irradiation ◽

Pulsed Laser ◽

Nanosecond Pulsed Laser ◽

Pulsed Laser Irradiation

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Preparation of Silicon Carbide Nano-Particles Using a Pulsed Laser Deposition Method

MRS Proceedings ◽

10.1557/proc-818-m11.1.1 ◽

2004 ◽

Vol 818 ◽

Cited By ~ 1

Author(s):

H. Kawasaki ◽

Y. Suda ◽

T. Ohshima ◽

T. Ueda ◽

S. Nakashima

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Pulsed Laser Deposition ◽

Nd:Yag Laser ◽

Photoelectron Spectroscopy ◽

Pulsed Laser ◽

Nano Particles ◽

Laser Deposition ◽

Laser Beams ◽

Silicon Carbon

AbstractWe have developed a new pulsed laser deposition technique using two Nd:YAG laser beams for the nucleation of silicon carbide (SiC) crystalline nano-particles and single crystalline SiC thin films. Transmission electron microscopy and atomic force microscopy observation suggest that several nanometer size SiC particles can be prepared by the new pulsed laser deposition (PLD) method using two Nd:YAG laser beams (1064nm and 532nm). X ray photoelectron spectroscopy measurements suggest that the silicon/carbon composition ratio of the prepared SiC thin films can be controlled by laser fluence and wavelength.

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