scholarly journals The Study of Optical and Electrical Properties of Nanostructured Silicon Carbide Thin Films Grown by Pulsed-Laser Deposition

2021 ◽  
Vol 9 (2) ◽  
pp. 46-50
Author(s):  
Muhanad A. Ahmed ◽  
Mohammed F. Mohammed Sabri ◽  
Wathiq R. Abed

In this paper, nanostructured silicon carbide (SiC) thin films are deposited onto glass substrate using pulsed laser deposition technique. Electrical and optical characterizations such as conductivity, resistivity, transmission, Seeback effect, absorption, absorption coefficient, energy band gap, and extinction coefficient as a function of photon energy, and the effect of thin films thickness on transmission are carried out to characterize the prepared samples. Results showed that the prepared SiC thin film is an n-type semiconductor with an indirect bandgap of ~3 eV, 448 nm cutoff wavelength, 3.4395 × 104 cm−1 absorption coefficient and 0.154 extinction coefficient. The surface morphology of the SiC thin films is studied using scanning electron microscope at a substrate temperature of 400 °C and it is found that the grain size of the prepared SiC thin film is about 30 nm. As such, the nano thin films optical and structural characteristics enable the films to be used as gases sensors in many optoelectronic devices such as the environment and ultraviolet photodiode.

2021 ◽  
Author(s):  
Robynne Lynne PALDI ◽  
Xing Sun ◽  
Xin Li Phuah ◽  
Juanjuan Lu ◽  
Xinghang Zhang ◽  
...  

Self-assembled oxide-metallic alloyed nanopillars as hybrid plasmonic metamaterials (e.g., ZnO-AgxAu1-x) in a thin film form are grown using a pulsed laser deposition method. The hybrid films were demonstrated to be...


2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.


Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 136
Author(s):  
Ping Tang ◽  
Weimin Wang ◽  
Bing Li ◽  
Lianghuan Feng ◽  
Guanggen Zeng

Aluminum antimony (AlSb) is a promising photovoltaic material with a band gap of about 1.62 eV. However, AlSb is highly deliquescent and not stable, which has brought great difficulties to the applications. Based on the above situation, there are two purposes for preparing our Zn-doped AlSb (AlSb:Zn) thin films: One is to make P-type AlSb and the other is to find a way to suppress the deliquescence of AlSb. The AlSb:Zn thin films were prepared on glass substrates at different substrate temperatures by using the pulsed laser deposition (PLD) method. The structural, surface morphological, optical, and electrical properties of AlSb:Zn films were investigated. The crystallization of AlSb:Zn thin films was enhanced and the electrical resistivity decreased as the substrate temperature increased. The scanning electron microscopy (SEM) images indicated that the grain sizes became bigger as the substrate temperatures increased. The Raman vibration mode AlSb:Zn films were located at ~107 and ~142 cm−1 and the intensity of Raman peaks was stronger at higher substrate temperatures. In the experiment, a reduced band gap (1.4 eV) of the AlSb:Zn thin film was observed compared to the undoped AlSb films, which were more suitable for thin-film solar cells. Zn doping could reduce the deliquescent speed of AlSb thin films. The fabricated heterojunction device showed the good rectification behavior, which indicated the PN junction formation. The obvious photovoltaic effect has been observed in an FTO/ZnS/AlSb:Zn/Au device.


Catalysts ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 954
Author(s):  
Anna Cyza ◽  
Łukasz Cieniek ◽  
Tomasz Moskalewicz ◽  
Wojciech Maziarz ◽  
Jan Kusiński ◽  
...  

The aim of the presented investigations was to deposit the thin films La1−xSrxFeO3 (x = 0, 0.1, 0.2) on (100) Si substrate by using the Pulsed Laser Deposition (PLD) method. Structure was exanimated by using XRD, SEM, AFM, TEM and XPS methods. The catalytic properties were analyzed in 4 ppm acetone atmosphere. The doping of Sr thin films La1−xSrxFeO3 (x = 0, 0.1, 0.2) resulted in a decrease in the size of the crystallites, the volume of the elemental cell and change in the grain morphology. In the LaFeO3 and La0.9Sr0.1FeO3, clusters around which small grains grow are visible in the structure, while in the layer La0.8Sr0.2FeO3, the visible grains are elongated. The TEM analysis has shown that the obtained thin films had a thickness in the range 150–170 nm with triangular or flat column ends. The experiment performed in the presence of gases allowed us to conclude that the surfaces (101/020) in the triangle-shaped columns and the plane (121/200) faces in flat columns were exposed to gases. The best properties in the presence of CH3COCH3 gas were noted for LaFeO3 thin film with triangle columns ending with orientation (101/020).


2002 ◽  
Vol 720 ◽  
Author(s):  
Daniel Potrepka ◽  
Steven Tidrow ◽  
Arthur Tauber ◽  
Kevin Kirchner ◽  
Bernard Rod ◽  
...  

AbstractThin films were prepared from bulk targets by pulsed-laser deposition techniques. The targets were composed of Ba0.6Sr0.4TiO3 with charge-compensated substitutions for Ti4+. Results of the dielectric characterization measurements will be discussed and compared to the results of similar measurements in bulk materials with the same composition.


2004 ◽  
Vol 818 ◽  
Author(s):  
H. Kawasaki ◽  
Y. Suda ◽  
T. Ohshima ◽  
T. Ueda ◽  
S. Nakashima

AbstractWe have developed a new pulsed laser deposition technique using two Nd:YAG laser beams for the nucleation of silicon carbide (SiC) crystalline nano-particles and single crystalline SiC thin films. Transmission electron microscopy and atomic force microscopy observation suggest that several nanometer size SiC particles can be prepared by the new pulsed laser deposition (PLD) method using two Nd:YAG laser beams (1064nm and 532nm). X ray photoelectron spectroscopy measurements suggest that the silicon/carbon composition ratio of the prepared SiC thin films can be controlled by laser fluence and wavelength.


2006 ◽  
Vol 11-12 ◽  
pp. 311-314 ◽  
Author(s):  
Hiroki Asami ◽  
Jun Inoue ◽  
M. Hirai ◽  
Tsuneo Suzuki ◽  
Tadachika Nakayama ◽  
...  

Chromium magnesium oxynitride ((Cr,Mg)(N,O)) thin films have been prepared by pulsed laser deposition (PLD) method with changing the surface area ratio of Mg target (SR) from 0 to 100 %. As a result of the analysis by energy dispersive X-ray spectroscopy (EDX), it was found that magnesium content in the total metallic elements (Cr1-x, Mgx) are controlled by changing SR from 0 to 100 % to be the x ranging from 0 to 1.0. Since the crystal structure of main phase in all thin films was found to be NaCl type, the XRD results showed that the thin films were mainly consisted of (Cr,Mg)(N,O). The hardness of (Cr,Mg)(N,O) thin films were increased almost linearly up to SR = 50 %, above which it decreases rapidly. The maximum Vickers hardness (HV) of 3600 was obtained for the thin film which was prepared by SR = 50 %, and the minimum HV of 1650 was obtained for the thin film which was prepared by SR = 100 %.


MRS Bulletin ◽  
1992 ◽  
Vol 17 (2) ◽  
pp. 44-53 ◽  
Author(s):  
Catherine M. Cotell ◽  
Kenneth S. Grabowski

The successful use of pulsed laser deposition (PLD) to fabricate thin film superconductors has generated interest in using the technique to deposit thin films of other materials. The compositional fidelity between laser target and deposited film and the ability to deposit films in reactive gas environments make the PLD process particularly well suited to the deposition of complex multicomponent materials. Cheung and Sankur recently provided an excellent review of the PLD field, including a table of over 100 elements, inorganic and organic compounds, andsuperlattices that have been laser evaporated. Over 75 of these materials were deposited as thin films.The goal of this article is to provide an introduction to some of the newer applications of PLD for thin film fabrication. Four classes of materials are highlighted: ferroelectrics, bioceramics, ferrites, and tribological materials. Ferroelectric materials are structurally related to the high-temperature superconducting oxides and therefore are a direct extension of the recent superconducting oxide work. Bioceramics are dissimilar in structure and application to both ferroelectrics and superconducting oxides, but they are complex multicomponent oxides and, therefore, benefit from the use of PLD. Ferrites, also complex, multicomponent oxides, represent another exciting, but only lightly explored opportunity for PLD. In contrast, tribological materials are typically neither complex nor multicomponent. Nevertheless, interesting structures and properties have been produced by PLD. A few of the more important ones will be discussed. These different types of materials demonstrate the diversity of capabilities offered by PLD.


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