Dielectric properties and switching processes of ferroelectric superlattices

We review dielectric properties of BaZrO3/BaTiO3 (BZ/BT) superlattices deposited on a single-crystal MgO substrate, and having a period of 13.32 nm. These superlattices have specific properties distinguishing them from BZ or BT bulk materials, and from thin films, with a ferroelectric phase transition around 393-395 °?, significantly higher than in bulk samples and thin films of BT, and appearing of second order. The polarization switching occurs in two stages and the precise analysis of experimental data demonstrates that the motion of the domain walls causes the switching processes. We conclude that the mobility of the domain walls decreases on heating. The presence of an internal bias field has been demonstrated and shown to be directed from the superlattice to the substrate, in agreement with an analysis based on the flexoelectric effect. The switching current has been shown to vary in weak fields as 1/E? with the exponent ? much smaller than in thin ferroelectric films. The appearance of the power index ?, which is significantly different from unity, may be due to a decrease in the average value of the switched polarization due to the boundaries between layers of different materials.

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Modeling of bias-field-dependent dielectric properties in ferroelectric thin films

Journal of Applied Physics ◽

10.1063/1.2060950 ◽

2005 ◽

Vol 98 (7) ◽

pp. 074101 ◽

Cited By ~ 6

Author(s):

C. K. Wong ◽

C. H. Tsang ◽

F. G. Shin

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Bias Field ◽

Ferroelectric Thin Films ◽

Field Dependent

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Fatigue in PZT Thin Films

MRS Proceedings ◽

10.1557/proc-655-cc10.8.1 ◽

2000 ◽

Vol 655 ◽

Cited By ~ 2

Author(s):

V. Shur ◽

E. Nikolaeva ◽

E. Shishkin ◽

I. Baturin ◽

D. Bolten ◽

...

Keyword(s):

Thin Films ◽

Distribution Function ◽

Field Distribution ◽

Fatigue Behavior ◽

Bias Field ◽

New Approach ◽

Pzt Thin Films ◽

Theoretical Predictions ◽

Characteristic Evolution ◽

Internal Bias

AbstractWe have used the new approach to fatigue phenomenon for analysis of the switching current and C-V characteristic evolution during cycling in PZT thin films. It was shown that in accordance with theoretical predictions the rejuvenation stage precedes the fatigue one. We have demonstrated that fatigue behavior corresponds to the spreading of the internal bias field distribution function during ac switching.

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Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires

SPIN ◽

10.1142/s2010324719500048 ◽

2019 ◽

Vol 09 (01) ◽

pp. 1950004

Author(s):

Jingchun Wang ◽

Floriano Cuccureddu ◽

Rafael Ramos ◽

Cormac Ó. Coileáin ◽

Igor V. Shvets ◽

...

Keyword(s):

Thin Films ◽

Domain Wall ◽

Exchange Interaction ◽

Exchange Bias ◽

Room Temperature ◽

Domain Walls ◽

Nanowire Array ◽

Bias Field ◽

Nanowire Arrays ◽

Exchange Bias Field

We present the possibility of enhancing magnetoresistance (MR) by controlling nanoscale domain wall (DW) width in a planar nanowire array. Results based on micromagnetic calculations show that DW width decreases with increasing exchange bias field and decreases with reducing exchange interaction between neighboring nanowires. Fe/Fe3O4 nanowire arrays were grown on [Formula: see text]-plane sapphire to demonstrate the feasibility of this concept, and an enhanced MR ratio of 3.7% was observed at room temperature. compared with flat and stepped Fe3O4 thin films.

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Dielectric Properties of Sr 0.75 Ba 0.25 Nb 2 O 6 Thin Films: Bias Field, Frequency and Temperature Dependence

Ferroelectrics ◽

10.1080/00150190211517 ◽

2002 ◽

Vol 271 (1) ◽

pp. 247-252 ◽

Cited By ~ 7

Author(s):

R. G. Mendes ◽

I. A. Santos ◽

E. B. Araújo ◽

J. A. Eiras

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Temperature Dependence ◽

Bias Field ◽

Field Frequency

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Frequency dependence of the coercive field and the internal bias field in ferroelectric thin films

Physics of the Solid State ◽

10.1134/s1063783409070075 ◽

2009 ◽

Vol 51 (7) ◽

pp. 1348-1350 ◽

Cited By ~ 8

Author(s):

A. S. Sidorkin ◽

L. P. Nesterenko ◽

S. V. Ryabtsev ◽

A. A. Sidorkin

Keyword(s):

Thin Films ◽

Frequency Dependence ◽

Coercive Field ◽

Bias Field ◽

Ferroelectric Thin Films ◽

Internal Bias ◽

Internal Bias Field

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Influence of the internal bias field on the movement of the domain walls in (CH3NH3)5Bi2Br11crystals

Ferroelectrics ◽

10.1080/00150199708014088 ◽

1997 ◽

Vol 190 (1) ◽

pp. 25-30 ◽

Cited By ~ 8

Author(s):

K. Matyjasek ◽

R. Jakubas

Keyword(s):

Domain Walls ◽

Bias Field ◽

Internal Bias ◽

Internal Bias Field

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Annealing effects on the internal bias field in ferroelectric PZT thin films with self-polarization

Integrated Ferroelectrics ◽

10.1080/10584589908210138 ◽

1999 ◽

Vol 23 (1-4) ◽

pp. 25-43 ◽

Cited By ~ 24

Author(s):

Shan Sun ◽

Yongmei Wang ◽

Paul A. Fuierer ◽

Bruce A. Tuttle

Keyword(s):

Thin Films ◽

Bias Field ◽

Pzt Thin Films ◽

Annealing Effects ◽

Internal Bias ◽

Internal Bias Field

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Effect of ferroelectric domain walls on the dielectric properties of PbZrO3 thin films

Applied Physics Letters ◽

10.1063/5.0017984 ◽

2020 ◽

Vol 117 (14) ◽

pp. 142905 ◽

Cited By ~ 1

Author(s):

Mamadou D. Coulibaly ◽

Caroline Borderon ◽

Raphaël Renoud ◽

Hartmut W. Gundel

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Domain Walls ◽

Ferroelectric Domain

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Self-poling Effects in Sol-gel Derived Pb(Zr1-xTix)O3 Thin Films

MRS Proceedings ◽

10.1557/proc-748-u12.24 ◽

2002 ◽

Vol 748 ◽

Author(s):

Jinrong Cheng ◽

Nan Li ◽

L. Eric Cross ◽

Zhongyan Meng

Keyword(s):

Thin Films ◽

Film Thickness ◽

Piezoelectric Effect ◽

Sol Gel ◽

Bias Field ◽

The Self ◽

Pzt Thin Films ◽

Direct Piezoelectric Effect ◽

Internal Bias ◽

Internal Bias Field

ABSTRACTBased on the direct piezoelectric effect, the measurement of piezoelectric module d33 was conducted to examine the self-poling effect in sol-gel derived Pb(Zr1-xTix)O3 (PZT) thin films. It is observed that as-prepared PZT thin films have piezoelectric responses being dependent upon the film thickness and composition. The higher d33 of 26 pC/N is achieved for ∼0.4 μm thick PZT thin films with Zr/Ti ratio of 53/47. The d33 value decreases with increasing the film thickness for as-prepared PZT thin films, however, increases for the same film after external poling. The origin of the self-poling effect was briefly discussed based on the formation of an internal bias field in PZT thin films.

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