Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires
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We present the possibility of enhancing magnetoresistance (MR) by controlling nanoscale domain wall (DW) width in a planar nanowire array. Results based on micromagnetic calculations show that DW width decreases with increasing exchange bias field and decreases with reducing exchange interaction between neighboring nanowires. Fe/Fe3O4 nanowire arrays were grown on [Formula: see text]-plane sapphire to demonstrate the feasibility of this concept, and an enhanced MR ratio of 3.7% was observed at room temperature. compared with flat and stepped Fe3O4 thin films.
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2021 ◽
Vol 31
(6)
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pp. 296-300
2019 ◽
Vol 476
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pp. 469-471
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2014 ◽
Vol 875-877
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pp. 272-276
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