Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires

SPIN ◽  
2019 ◽  
Vol 09 (01) ◽  
pp. 1950004
Author(s):  
Jingchun Wang ◽  
Floriano Cuccureddu ◽  
Rafael Ramos ◽  
Cormac Ó. Coileáin ◽  
Igor V. Shvets ◽  
...  

We present the possibility of enhancing magnetoresistance (MR) by controlling nanoscale domain wall (DW) width in a planar nanowire array. Results based on micromagnetic calculations show that DW width decreases with increasing exchange bias field and decreases with reducing exchange interaction between neighboring nanowires. Fe/Fe3O4 nanowire arrays were grown on [Formula: see text]-plane sapphire to demonstrate the feasibility of this concept, and an enhanced MR ratio of 3.7% was observed at room temperature. compared with flat and stepped Fe3O4 thin films.

2011 ◽  
Vol 109 (2) ◽  
pp. 023910 ◽  
Author(s):  
Arno Ehresmann ◽  
Christoph Schmidt ◽  
Tanja Weis ◽  
Dieter Engel

2021 ◽  
Vol 1036 ◽  
pp. 45-52
Author(s):  
Jiao Yang ◽  
Xin Yu Wang ◽  
Peng Kai Li ◽  
Ji Fa Huang ◽  
Peng Hao Deng

X-ray diffractometer, field emission scanning electron microscope (SEM, Hitachi S-4800), laser confocal micro-region Raman spectrometer and vibration sample magnetometer were used to systematically study the effects of polyethyleneimine concentrations and exposure time on the morphology and size of ZnO nanowire arrays. The photoelectric property and the relationship between the morphology of nanowire arrays and ferromagnetism at room temperature were also analyzed. Under 15 min exposure time, when the polyethyleneimine concentration is 2.25 g / L, the obtained ZnO nanowire array film exhibits the smallest size, the optimal density and vertical orientation. According to the study of luminescence and room temperature magnetism, it is shown that the optical and ferromagnetic property are related to the variation tendency of oxygen defects and surface defects of the ZnO nanowires.


2000 ◽  
Vol 77 (23) ◽  
pp. 3815-3817 ◽  
Author(s):  
M. Fraune ◽  
U. Rüdiger ◽  
G. Güntherodt ◽  
S. Cardoso ◽  
P. Freitas

2014 ◽  
Vol 875-877 ◽  
pp. 272-276 ◽  
Author(s):  
Chao Jing ◽  
Ye Jun Yang ◽  
Dong Hua Yu ◽  
Zhe Li ◽  
Xiao Long Wang ◽  
...  

We report the exchange bias properties in the bulk Ni45Co5Mn38Sn12quaternary Heusler alloy. The ferromagnetic (FM) –antiferromagnetic (AFM) interactions get reinforced after the Co substitution for Ni in the Ni-Mn-Sn alloy, which increase the exchange bias field (HE). A maximum shift in hysteresis loops of 306 Oe was observed in the 10 kOe field cooled sample. The origin of this large exchange bias field has been discussed. Magnetic hysteresis loop obtained in the zero field cooled (ZFC) mode shows double-shifted loop, and the reason of this phenomenon has been explained in detail.


2006 ◽  
Vol 99 (8) ◽  
pp. 08C108 ◽  
Author(s):  
V. P. Nascimento ◽  
E. Baggio Saitovitch ◽  
F. Pelegrini ◽  
L. C. Figueiredo ◽  
A. Biondo ◽  
...  

2001 ◽  
Vol 666 ◽  
Author(s):  
Jin Won Seo ◽  
Jean Fompeyrine ◽  
Heinz Siegwart ◽  
Jean-Pierre Locquet

ABSTRACTThe origin of the exchange bias between a ferro- and an antiferromagnet still is not fully resolved. Many structural parameters such as film thickness, roughness, domain size, domain walls, strain, dislocations, and surface defects play a role. To disentangle their individual contributions, one must correlate each of these structural effects with the exchange bias. Here we report our first such attempts using thin films of the antiferromagnetic orthoferrite LaFeO3 grown by molecular beam epitaxy. We investigate how the epitaxial relationship and strain affect the domain configuration as well as their size and orientation. Next, we explore how these different domains can pin ferromagnetic domains in exchange-coupled systems. We conclude that decreasing the domain size of the antiferromagnet leads to a higher exchange bias. The highest exchange bias was obtained for LaFeO3 films on MgO substrates.


2013 ◽  
Vol 114 (7) ◽  
pp. 073908 ◽  
Author(s):  
Ki-Yeon Kim ◽  
Hyeok-Cheol Choi ◽  
Sin-Yong Jo ◽  
Chun-Yeol You

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