GTO thin film thermoelectric conversion device manufactured by RF magnetron sputtering method

Amorphous V 2 O 5, LiPON and Li 2 Mn 2 O 4 thin films were fabricated by RF magnetron sputtering methods and the morphology of thin films were characterized by scanning electron microscopy. Then with these three materials deposited as the anode, solid electrolyte, cathode, and vanadium as current collector, a rocking-chair type of all-solid-state thin-film-type Lithium-ion rechargeable battery was prepared by using the same sputtering parameters on stainless steel substrates. Electrochemical studies show that the thin film battery has a good charge–discharge characteristic in the voltage range of 0.3–3.5 V, and after 30 cycles the cell performance turned to become stabilized with the charge capacity of 9 μAh/cm2, and capacity loss of single-cycle of about 0.2%. At the same time, due to electronic conductivity of the electrolyte film, self-discharge may exist, resulting in approximately 96.6% Coulombic efficiency.

Download Full-text

Fabrication and Testing of All-solid-state Nanoscale Lithium Batteries Using LiPON for Electrolytes

E3S Web of Conferences ◽

10.1051/e3sconf/20185301008 ◽

2018 ◽

Vol 53 ◽

pp. 01008

Author(s):

Feihu Tan ◽

XiaoPing Liang ◽

Feng Wei ◽

Jun Du

Keyword(s):

Thin Film ◽

Thin Films ◽

Solid State ◽

Magnetron Sputtering ◽

Specific Capacity ◽

Rf Magnetron Sputtering ◽

Open Circuit ◽

Working Pressure ◽

Thin Film Battery ◽

A Current

The amorphous LiPON thin film was obtained by using the crystalline Li3PO4 target and the RF magnetron sputtering method at a N2 working pressure of 1 Pa. and then the morphology and composition of LiPON thin films are analysed by SEM and EDS. SEM shows that the film was compact and smooth, while EDS shows that the content of N in LiPON thin film was about 17.47%. The electrochemical properties of Pt/LiPON/Pt were analysed by EIS, and the ionic conductivity of LiPON thin films was 3.8×10-7 S/cm. By using the hard mask in the magnetron sputtering process, the all-solid-state thin film battery with Si/Ti/Pt/LiCoO2/LiPON/Li4Ti5O12/Pt structure was prepared, and its electrical properties were studied. As for this thin film battery, the open circuit voltage was 1.9 V and the first discharge specific capacity was 34.7 μAh/cm2·μm at a current density of 5 μA/cm-2, indicating that is promising in all-solidstate thin film batteries.

Download Full-text

The Study of ZnO Thin Film for SAW Filter by PLD and RF Magnetron Sputtering

Journal of the Korean Institute of Electrical and Electronic Material Engineers ◽

10.4313/jkem.2012.25.12.979 ◽

2012 ◽

Vol 25 (12) ◽

pp. 979-983

Author(s):

Seung-Hwan Lee ◽

Yun-Sik Yu

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Rf Magnetron Sputtering ◽

Zno Thin Film

Download Full-text

Enhanced UV Photon-response of Tin Nano Cluster Loaded- laser Irradiated ZnO Thin film detector

MRS Proceedings ◽

10.1557/opl.2011.206 ◽

2011 ◽

Vol 1288 ◽

Author(s):

Rashmi Menon ◽

K. Sreenivas ◽

Vinay Gupta

Keyword(s):

Thin Film ◽

Thin Films ◽

Magnetron Sputtering ◽

Surface States ◽

Response Speed ◽

Rf Magnetron Sputtering ◽

Fast Response ◽

Zno Thin Films ◽

Zno Thin Film ◽

Photo Response

ABSTRACTZinc Oxide (ZnO), II-VI compound semiconductor, is a promising material for ultraviolet (UV) photon sensor applications due to its attractive properties such as good photoconductivity, ease processing at low temperatures and excellent radiation hardness. The rf magnetron sputtering is a suitable deposition technique due to better control over stoichiometry and deposition of uniform film. Studies have shown that the presence of surface defects in ZnO and subsequently their passivation are crucial for enhanced photo-response characteristics, and to obtain the fast response speed. Worldwide efforts are continuing to develop good quality ZnO thin films with novel design structures for realization of an efficient UV photon sensor. In the present work, UV photon sensor is fabricated using a ZnO thin films deposited by rf magnetron sputtering on the corning glass substrate. Photo-response, (Ion/Ioff) of as-grown ZnO film of thickness 100 nm is found to be 3×103 with response time of 90 ms for UV intensity of 140 μW/cm2 (λ = 365 nm). With irradiation on ZnO thin film by pulsed Nd:YAG laser (forth harmonics 266 nm), the sensitivity of the UV sensor is found to enhance. The photo-response increases after laser irradiation to 4x104 with a fast response speed of 35 ms and attributed to the change in surface states and the native defects in the ZnO thin film. Further, enhancement in the ultraviolet (UV) photo-response (8×104) of detector was observed after integrating the nano-scale islands of Sn metal on the surface of laser irradiated ZnO thin film.

Download Full-text