PEALD induced interface engineering of AlNO/AlGaN/GaN MIS diode with alternate insertion of AlN in Al2O3

2017 ◽  
Author(s):  
Qian Wang ◽  
Xinhong Cheng ◽  
Li Zheng ◽  
Lingyang Shen ◽  
Jingjie Li ◽  
...  
Keyword(s):  
Interface Engineering ◽  
Mis Diode

scholarly journals Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3

RSC Advances ◽  
2017 ◽  
Vol 7 (19) ◽  
pp. 11745-11751 ◽  
Author(s):  
Qian Wang ◽  
Xinhong Cheng ◽  
Li Zheng ◽  
Lingyan Shen ◽  
Jingjie Li ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Interface Engineering ◽  
Layer Deposition ◽  
Mis Diode

In this paper, AlNO nano-films have been deposited on an AlGaN/GaN heterojunction by alternating growth of AlN and Al2O3 using plasma enhanced atomic layer deposition (PEALD).

Interface Engineering To Boost Photoresponse Performance of Self-Powered, Broad-Bandwidth PEDOT:PSS/Si Heterojunction Photodetector

2016 ◽  
Vol 8 (29) ◽  
pp. 19158-19167 ◽  
Author(s):  
Zhimin Liang ◽  
Pingyang Zeng ◽  
Pengyi Liu ◽  
Chuanxi Zhao ◽  
Weiguang Xie ◽  
...  
Keyword(s):  
Interface Engineering ◽  
Broad Bandwidth ◽  
Self Powered
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