scholarly journals Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3

RSC Advances ◽  
2017 ◽  
Vol 7 (19) ◽  
pp. 11745-11751 ◽  
Author(s):  
Qian Wang ◽  
Xinhong Cheng ◽  
Li Zheng ◽  
Lingyan Shen ◽  
Jingjie Li ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Interface Engineering ◽  
Layer Deposition ◽  
Mis Diode

In this paper, AlNO nano-films have been deposited on an AlGaN/GaN heterojunction by alternating growth of AlN and Al2O3 using plasma enhanced atomic layer deposition (PEALD).

Atomic layer deposition-triggered hierarchical core/shell stable bifunctional electrocatalysts for overall water splitting

2021 ◽  
Vol 9 (37) ◽  
pp. 21132-21141
Author(s):  
T. Kavinkumar ◽  
Selvaraj Seenivasan ◽  
Hyeonjung Jung ◽  
Jeong Woo Han ◽  
Do-Heyoung Kim
Keyword(s):  
Surface Modification ◽  
Atomic Layer Deposition ◽  
Water Splitting ◽  
Atomic Layer ◽  
Core Shell ◽  
Interface Engineering ◽  
Bifunctional Electrocatalyst ◽  
Overall Water Splitting ◽  
Bifunctional Electrocatalysts ◽  
Layer Deposition

A synergistic strategy of interface engineering and surface modification is efficient to construct a promising bifunctional electrocatalyst for enhanced electrocatalytic water splitting.

Interface Engineering of Mesoscopic Perovskite Solar Cells by Atomic Layer Deposition of Ta2O5

2021 ◽  
Author(s):  
Rohit D. Chavan ◽  
Mohammad Mahdi Tavakoli ◽  
Suverna Trivedi ◽  
Daniel Prochowicz ◽  
Abul Kalam ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Perovskite Solar Cells ◽  
Atomic Layer ◽  
Interface Engineering ◽  
Layer Deposition

Effective atomic interface engineering in Bi2Te2.7Se0.3 thermoelectric material by atomic-layer-deposition approach

Nano Energy ◽  
2018 ◽  
Vol 49 ◽  
pp. 257-266 ◽  
Author(s):  
Shuankui Li ◽  
Yidong Liu ◽  
Fusheng Liu ◽  
Dongsheng He ◽  
Jiaqing He ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Thermoelectric Material ◽  
Atomic Layer ◽  
Interface Engineering ◽  
Layer Deposition ◽  
Atomic Interface

Interface Engineering for Extremely Large Grains in Explosively Crystallized TiO2 Films Grown by Low-Temperature Atomic Layer Deposition

2017 ◽  
Vol 29 (5) ◽  
pp. 2046-2054 ◽  
Author(s):  
Cheol Jin Cho ◽  
Jun-Yun Kang ◽  
Woo Chul Lee ◽  
Seung-Hyub Baek ◽  
Jin-Sang Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tio2 Films ◽  
Interface Engineering ◽  
Layer Deposition

scholarly journals Interface engineering of graphene–silicon Schottky junction solar cells with an Al2O3 interfacial layer grown by atomic layer deposition

RSC Advances ◽  
2018 ◽  
Vol 8 (19) ◽  
pp. 10593-10597 ◽  
Author(s):  
Aaesha Alnuaimi ◽  
Ibraheem Almansouri ◽  
Irfan Saadat ◽  
Ammar Nayfeh
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Interfacial Layer ◽  
Aluminium Oxide ◽  
Atomic Layer ◽  
Schottky Junction ◽  
Interface Engineering ◽  
Layer Deposition ◽  
Improved Performance

One approach to improve Gr/Si SBSC performance is engineering the interface with an interfacial layer. We demonstrate the improved performance of Gr/Si SBSC upon engineering the interface with an aluminium oxide (Al2O3) layer grown by atomic layer deposition (ALD)..

Interface engineering for a stable chemical structure of oxidized-black phosphorus via self-reduction in AlOx atomic layer deposition

Nanoscale ◽  
2018 ◽  
Vol 10 (48) ◽  
pp. 22896-22907 ◽  
Author(s):  
Dae-Kyoung Kim ◽  
Jimin Chae ◽  
Seok-Bo Hong ◽  
Hanbum Park ◽  
Kwang-Sik Jeong ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Chemical Structure ◽  
Atomic Layer ◽  
Black Phosphorus ◽  
The Self ◽  
Interface Engineering ◽  
Layer Deposition ◽  
Stable Chemical

The self-reduction of ALD-AlOx on oxidized BP (until 24 h) resulted in perfect removal of the PxOy states.

Sign in / Sign up

Export Citation Format

Share Document