scholarly journals Structure, morphology, and optical properties of ZnO:Mg thin film prepared by sol-gel spin coating method

2021 ◽  
Vol 10 (2) ◽  
pp. 241-250
Author(s):  
Budi Astuti ◽  
Putut Marwoto ◽  
Azizah Zhafirah ◽  
Nur Hamid ◽  
Didik Aryanto ◽  
...  

This research was conducted to analyze the Mg doping concentration effect on the structure, morphology, and optical properties of ZnO thin film prepared using the sol gel spin coating method. The Mg concentration was varied in the mole fraction of 1%, 3%, and 5%. Firstly, ZnO: Mg solution was dropped on a substrate and grown with a rotating speed of 3000 rpm and then annealed at 500 °C for 2 hours. The characterization of thin films' structure, morphology, and optical properties was done using XRD, FESEM, EDX, and UV-VIS spectrophotometer. XRD result showed a polycrystalline structure with three dominant peaks of (100), (002), and (101) plane, hexagonal wurtzite structures. Furthermore, the crystallite size was increased with the increase of Mg doping. FESEM results showed that the 5% ZnO: Mg thin film was the densest and least void from other films. In addition, the results of UV-Vis-NIR analysis showed the highest absorption value at a wavelength of 360-370 nm. The bandgap energy increased at 1% and 3% Mg doping samples but decreased by 5% Mg doping comes from the excess of oxygen in thin film with 5% Mg doping.

2021 ◽  
Vol 63 (8) ◽  
pp. 778-782
Author(s):  
Tülay Yıldız ◽  
Nida Katı ◽  
Kadriye Yalçın

Abstract In this study, undoped semiconductor ZnO thin film and Bi-doped ZnO thin films were produced using the sol-gel spin coating method. By changing each parameter of the spin coating method, the best conditions for the formation of the film were determined via the trial and error method. When the appropriate parameter was found, the specified parameter was applied for each film. The structural, superficial, and optical properties of the films produced were characterized via atomic force microscope (AFM), UV-visible spectroscopy, and Fourier transform infrared (FTIR), and the effects of Bi dopant on these properties were investigated. When the morphological properties of the undoped and Bi-doped ZnO films were examined, it was observed that they had a structure in a micro-fiber shape consisting of nanoparticles. When the surface roughness was examined, it was observed that the surface roughness values became larger as the rate of Bi dopant increased. By examining the optical properties of the films, it was determined that they were direct band transition materials and Bi-doped thin films were involved in the semiconductor range. In addition, optical properties changed positively with Bi dopant. Since Bi-doped ZnO thin film has a wide bandgap and good optical properties, it is a material that can be used in optoelectronic applications.


2009 ◽  
Vol 486 (1-2) ◽  
pp. 9-13 ◽  
Author(s):  
A.A. Al-Ghamdi ◽  
Waleed E. Mahmoud ◽  
S.J. Yaghmour ◽  
F.M. Al-Marzouki

2021 ◽  
Vol 16 (6) ◽  
pp. 967-973
Author(s):  
Shuai Zhao ◽  
Dong-Xue Lin ◽  
Yu-Xin Wang

All of the TiO2 films including intrinsic TiO2 film, Zn single doped film with 2.0 at% content and N doped films with 4.0 at%, 6.0 at%, 8.0 at% and 10.0 at% content, were obtained by butyl titanate (Ti(OC4H9)4) as a titanium source, zinc nitrate (Zn(NO3)2·6H2O) as zinc source and urea (H2 NCONH2) as nitrogen source, which was calcined at 600 °C on the glass substrate and Si substrate using sol–gel spin coating method. The structures, morphology and optical properties of various films were analyzed and studied by X ray diffract meter (XRD), ultraviolet-visible spectrophotometer (UV-Vis) and scanning electron microscope (SEM). The results indicated that the main crystal plane of TiO2 film was (101) and any impurity crystal plane didn't appear. All samples had obvious red shifts in the absorbing edge overall and reduced significantly the width of forbidden band, especially, the N doping content with 8.0 at% was surprised to investigate the strongest (101) peak intensity, the sharpest peak type, the best meritocratic orientation, the greatest red shift of the absorption spectrum, the lowest optical band gap value of 3.356 eV, and the highest utilization rate of visible light of the sample. However, the surface morphology of the others films except the N doping content with 8.0 at% is not further improved by co-doping, that is, their surfaces were still rough, had obvious voids and uneven distribution between the grains. Meanwhile, the intensity of the (101) crystalline diffraction peaks of these samples were reduced and the crystalline spacing generally increased after co-doping.


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