Assessment of the Summer Thermal Stability of the Attic Room Using Two Different Software

AbstractThis paper presents the calculations of the summer thermal stability of a critical room of the given building. In this case, the critical room of the building is an attic room. Using two different software (SIMULACE and DesignBuilder), the summer thermal stability of the attic room was evaluated according to the Czech standard ČSN 73 0540-2 [1]. This standard compares the calculated and required value of the maximum internal temperature in the summer period. The results from both software were compared with the Czech standard and also with each other. The resulting temperature courses in the interior differ by a few Celsius degrees. In conclusion, the causes of different results are discussed as well as the advantages and disadvantages of both software.

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Simulation of Summer Thermal Stability and Comparison with Measurement

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.824.536 ◽

2016 ◽

Vol 824 ◽

pp. 536-543

Author(s):

Libor Šteffek ◽

Jiří Kalánek ◽

Milan Ostrý

Keyword(s):

Thermal Stability ◽

Indoor Environment ◽

Storage Capacity ◽

Climate Data ◽

Summer Period ◽

Dynamic Calculation ◽

Building Site ◽

Local Characteristics ◽

Building Geometry ◽

Thermal Stability Of

Thermal stability of the indoor environment in summer period is influenced by the local characteristics of the building site, building geometry, orientation of glazing, heat storage capacity of structures, method and intensity of ventilation, but also the size and characteristics of transparent surfaces and associated heat gains from sunlight. The intensity of solar radiation is a very important parameter that affects the temperature in the room. As a boundary condition in computer simulations is used “Reference climatic year”, but the values are more or less different from the actual measured data. This article presents a comparison of the dynamic calculation of the temperature in the room with the real measured values. In addition, the calculation is modified by substitution of actually measured climate data.

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The Ordered Phase Formation in Ti-Al-Ga Alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069193 ◽

1970 ◽

Vol 28 ◽

pp. 440-441

Author(s):

Shiro Fujishiro ◽

Harold L. Gegel

Keyword(s):

Thermal Stability ◽

High Temperature ◽

Titanium Alloys ◽

Growth Kinetics ◽

Stoichiometric Composition ◽

Good Potential ◽

Alpha Titanium ◽

Cold Rolled ◽

Kinetics Of ◽

Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

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Microstructure studies of tungsten silicide schottky contacts on Gaas

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126445 ◽

1987 ◽

Vol 45 ◽

pp. 328-329

Author(s):

Yih-Cheng Shih ◽

E. L. Wilkie

Keyword(s):

Thermal Stability ◽

Field Effect Transistors ◽

Schottky Contact ◽

Schottky Contacts ◽

Excellent Thermal Stability ◽

Barrier Heights ◽

Gaas Substrates ◽

Film Adhesion ◽

Threshold Voltages ◽

Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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