Monte Carlo analysis of polymer translocation with deterministic and noisy electric fields

Open Physics ◽  
2012 ◽  
Vol 10 (3) ◽  
Author(s):  
Davide Valenti ◽  
Giovanni Denaro ◽  
Dominique Adorno ◽  
Nicola Pizzolato ◽  
Salvatore Zammito ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electric Fields ◽  
Piecewise Linear ◽  
Biological Membrane ◽  
Monte Carlo Analysis ◽  
Chain Molecule ◽  
Electric Voltage ◽  
Polymer Translocation ◽  
Bond Fluctuation ◽  
A Chain

AbstractPolymer translocation through the nanochannel is studied by means of a Monte Carlo approach, in the presence of a static or oscillating external electric voltage. The polymer is described as a chain molecule according to the two-dimensional “bond fluctuation model”. It moves through a piecewise linear channel, which mimics a nanopore in a biological membrane. The monomers of the chain interact with the walls of the channel, modelled as a reflecting barrier. We analyze the polymer dynamics, concentrating on the translocation time through the channel, when an external electric field is applied. By introducing a source of coloured noise, we analyze the effect of correlated random fluctuations on the polymer translocation dynamics.

Monte Carlo Analysis of Effect of Alloy Scattering on Electron Transport in Wurtzite Zn1-xMgxO

2013 ◽  
Vol 873 ◽  
pp. 861-864
Author(s):  
Lin Lin Hu ◽  
Ping Wang ◽  
Tao Shang ◽  
Jiu Xu Song
Keyword(s):  
Monte Carlo ◽  
Steady State ◽  
Electric Field ◽  
Electric Fields ◽  
Drift Velocity ◽  
Monte Carlo Model ◽  
Monte Carlo Analysis ◽  
Alloy Scattering ◽  
Ensemble Monte Carlo ◽  
Velocity Decrease

Steady-state and transient electron characteristics of wurtzite Zn1xMgxO are studied in detail. An ensemble Monte Carlo model is established considering alloy scattering. From the steady-state characteristics, it is found that alloy scattering makes the drift velocity decrease at different electric fields. For 10% Mg, the transient peak drift velocity decreases from 2.48×107cm/s to 2.13×107cm/s at 2000 kV/cm. While for 20% Mg, a higher electric field is needed for the onset of the overshoot, which corresponds to the larger peak electric field in the steady-state velocity-field characteristics.

scholarly journals Harmonic Extraction in Graphene: Monte Carlo Analysis of the Substrate Influence

Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 5108
Author(s):  
Elena Pascual ◽  
José M. Iglesias ◽  
María J. Martín ◽  
Raúl Rengel
Keyword(s):  
Monte Carlo ◽  
Electric Fields ◽  
Strong Field ◽  
Monte Carlo Analysis ◽  
High Order ◽  
Harmonic Intensity ◽  
Ensemble Monte Carlo ◽  
Ac Electric Fields ◽  
High Order Harmonic ◽  
Harmonic Extraction

Graphene on different substrates, such as SiO2, h-BN and Al2O3, has been subjected to oscillatory electric fields to analyse the response of the carriers in order to explore the generation of terahertz radiation by means of high-order harmonic extraction. The properties of the ensemble Monte Carlo simulator employed for such study have allowed us to evaluate the high-order harmonic intensity and the spectral density of velocity fluctuations under different amplitudes of the periodic electric field, proving that strong field conditions are preferable for the established goal. Furthermore, by comparison of both harmonic intensity and noise level, the threshold bandwidth for harmonic extraction has been determined. The results have shown that graphene on h-BN presents the best featuring of the cases under analysis and that in comparison to III–V semiconductors, it is a very good option for high-order harmonic extraction under AC electric fields with large amplitudes.

scholarly journals Magnetic force imaging of a chain of biogenic magnetite and Monte Carlo analysis of tip–particle interaction

2014 ◽  
Vol 47 (23) ◽  
pp. 235403 ◽  
Author(s):  
André Körnig ◽  
Markus A Hartmann ◽  
Christian Teichert ◽  
Peter Fratzl ◽  
Damien Faivre
Keyword(s):  
Monte Carlo ◽  
Magnetic Force ◽  
Particle Interaction ◽  
Monte Carlo Analysis ◽  
Biogenic Magnetite ◽  
A Chain

Generation of Correlated Logistic-Normal Random Variates for Medical Decision Trees

1998 ◽  
Vol 37 (03) ◽  
pp. 235-238 ◽  
Author(s):  
M. El-Taha ◽  
D. E. Clark
Keyword(s):  
Monte Carlo ◽  
Decision Trees ◽  
Computer Algebra ◽  
Taylor Series ◽  
Computer Algebra System ◽  
Random Variable ◽  
Monte Carlo Analysis ◽  
Normal Random Variable ◽  
Medical Decision ◽  
Theoretical Results

AbstractA Logistic-Normal random variable (Y) is obtained from a Normal random variable (X) by the relation Y = (ex)/(1 + ex). In Monte-Carlo analysis of decision trees, Logistic-Normal random variates may be used to model the branching probabilities. In some cases, the probabilities to be modeled may not be independent, and a method for generating correlated Logistic-Normal random variates would be useful. A technique for generating correlated Normal random variates has been previously described. Using Taylor Series approximations and the algebraic definitions of variance and covariance, we describe methods for estimating the means, variances, and covariances of Normal random variates which, after translation using the above formula, will result in Logistic-Normal random variates having approximately the desired means, variances, and covariances. Multiple simulations of the method using the Mathematica computer algebra system show satisfactory agreement with the theoretical results.

Monte Carlo Analysis of Nonequilibrium Ionized Flows.

1996 ◽  
Author(s):  
Iain D. Boyd ◽  
Xiaoming Liu ◽  
Jitendra Balakrishnan
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Analysis

scholarly journals Monte Carlo simulations of electron transport in 4H-SiC using the DFT-calculated density of states

2021 ◽  
Author(s):  
Janusz Wozny ◽  
Andrii Kovalchuk ◽  
Zbigniew Lisik ◽  
Jacek Podgorski ◽  
Piotr Bugalski ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Electric Fields ◽  
Density Of States ◽  
Electron Mobility ◽  
Crucial Issue ◽  
Calculated Density ◽  
Correct Calculation

AbstractWe carry out Monte Carlo simulations of electron transport in 4H-silicon carbide (4H-SiC) based on the numerically calculated density of states (DOS) to obtain the electron mobility at low electric fields. From the results, it can be concluded that a correct calculation of the DOS requires a very dense wavevector k-mesh when low electron kinetic energies are considered. The crucial issue is the numerical efficiency of the DOS calculation. We investigate the scaling efficiency when different numbers of cores are used.

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