Characterization of interfacial fracture parameters for nano-scale thin films continues to be challenging due to the difficulties associated with preparing samples, fixturing and loading the samples, and extracting and analyzing the experimental data. In this paper, we propose a stress-engineered superlayer test method that can be used to measure the interfacial fracture parameters of nano-scale (as well as micro-scale) thin films without the need for loading fixtures. The proposed test employs the residual stress in sputter-deposited metals to provide the energy for interfacial crack propagation. The innovative aspect of the test is the use of an etchable release layer that is deposited between the two interfacial materials of interest. The release layer is designed such that the available energy for interfacial crack propagation will continue to decrease as the crack propagates, and at the location where the crack ceases to propagate, the available energy for crack propagation will be the critical energy for crack propagation or the interfacial fracture toughness. The proposed test method has been successfully used to characterize Ti thin film on Si substrate.
CHARACTERIZATION OF THE CRACK PROPAGATION IN A MICROSTRUCTURALLY RANDOM MATERIAL
