scholarly journals Irradiation Effects on The Sensitivity of ZnO Thin Films Synthesized on Glass Substrate by Sol-gel Method

2021 ◽  
pp. 130-137
Author(s):  
Yasir Yahya Kasim ◽  
Ghazwan Ghazi Ali ◽  
Marwan Hafeedh Younus

This work investigates the structural, optical, and surface properties of ZnO thin films prepared by sol-gel method. The effect on waveguide sensor was examined at different irradiation durations of alpha particles. The X-ray diffraction (XRD) measurements revealed that the crystalline phase of ZnO thin films does not change after irradiation and showed a hexagonal structure of wurtzite type with an orientation toward (002). Moreover, ZnO thin films absorbance was increased with increasing irradiation time, whereas the transmittance was decreased. Additionally, increasing the irradiation time of alpha particles caused an increase in the extinction coefficient and the imaginary part,  while the optical energy gap of the ZnO samples was decreased. Finally, the maximum value of sensitivity was 42%, found at 6 min of irradiation duration.

2016 ◽  
Vol 09 (06) ◽  
pp. 1750010 ◽  
Author(s):  
Jitao Li ◽  
Dinyu Yang ◽  
Xinghua Zhu ◽  
Hui Sun ◽  
Xiuying Gao ◽  
...  

ZnO thin films have been prepared by sol–gel method in this paper. Zinc acetate, ethanol and mono-ethanolamine (MEA) were used as a metal precursor, solvent and stabilizer, respectively. The structural and optical properties of ZnO thin films were investigated and found to be strongly dependent on the annealing temperature. X-ray diffraction patterns revealed that as the annealing temperature increased, the crystalline quality of the samples became better. The atomic force microscope images of the samples show larger and compact grains at higher heat-treating temperature. The ultraviolet–visible transmittance spectra indicated that as the temperature increased, the transmittance improved and the energy gap became larger (from 3.11[Formula: see text]eV at 400[Formula: see text]C to 3.22[Formula: see text]eV at 500[Formula: see text]C). The photoluminescence spectra presented a variety of emission peaks, two strong peaks at 390[Formula: see text]nm and 469[Formula: see text]nm, respectively, from the intrinsic emission and point defects, and the intensity of these peaks decreased with the increase of temperature.


2014 ◽  
Vol 23 (4) ◽  
pp. 047805 ◽  
Author(s):  
Meng-Meng Cao ◽  
Xiao-Ru Zhao ◽  
Li-Bing Duan ◽  
Jin-Ru Liu ◽  
Meng-Meng Guan ◽  
...  

Author(s):  
S. Ben Yahia ◽  
L. Znaidi ◽  
A. Kanaev ◽  
J.P. Petitet

2000 ◽  
Vol 181-182 ◽  
pp. 109-112 ◽  
Author(s):  
Shinobu Fujihara ◽  
Chikako Sasaki ◽  
Toshio Kimura

2009 ◽  
Vol 98 (2) ◽  
pp. 259-263 ◽  
Author(s):  
Nina V. Kaneva ◽  
Georgi G. Yordanov ◽  
Ceco D. Dushkin

2013 ◽  
Vol 652-654 ◽  
pp. 519-522
Author(s):  
Jun Chen ◽  
Yue Hui Hu ◽  
Hong Hao Hu ◽  
Yi Chuan Chen

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.


2004 ◽  
Vol 180-181 ◽  
pp. 659-662 ◽  
Author(s):  
V Musat ◽  
B Teixeira ◽  
E Fortunato ◽  
R.C.C Monteiro ◽  
P Vilarinho

2008 ◽  
Vol 517 (3) ◽  
pp. 1032-1036 ◽  
Author(s):  
Chien-Yie Tsay ◽  
Hua-Chi Cheng ◽  
Yen-Ting Tung ◽  
Wei-Hsing Tuan ◽  
Chung-Kwei Lin

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