Thermal and solutal conditions at the tips of a directional dendritic growth front

Morphological features of montmorillonite aggregates in a large number of samples suggest that they may be formed by a dendritic crystal growth mechanism (i.e., tree-like growth by branching of a growth front).

Download Full-text

Convective effects in microgravity on dendritic growth kinetics and morphologies

10.2514/6.1996-251 ◽

1996 ◽

Author(s):

M. Glicksman ◽

M. Koss ◽

L. Bushnell ◽

J. LaCombe ◽

E. Winsa

Keyword(s):

Growth Kinetics ◽

Dendritic Growth

Download Full-text

Dendritic Growth Failure of a Mesa Diode

ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa1997p0179 ◽

1997 ◽

Author(s):

P. Singh ◽

V. Cozzolino ◽

G. Galyon ◽

R. Logan ◽

K. Troccia ◽

...

Keyword(s):

Electric Fields ◽

Dendritic Growth ◽

Silicon Oxide ◽

Impact Ionization ◽

Electron Tunneling ◽

Growth Failure ◽

Side Wall ◽

Oxide Interface ◽

Band Bending ◽

Cross Section Area

Abstract The time delayed failure of a mesa diode is explained on the basis of dendritic growth on the oxide passivated diode side walls. Lead dendrites nucleated at the p+ side Pb-Sn solder metallization and grew towards the n side metallization. The infinitesimal cross section area of the dendrites was not sufficient to allow them to directly affect the electrical behavior of the high voltage power diodes. However, the electric fields associated with the dendrites caused sharp band bending near the silicon-oxide interface leading to electron tunneling across the band gap at velocities high enough to cause impact ionization and ultimately the avalanche breakdown of the diode. Damage was confined to a narrow path on the diode side wall because of the limited influence of the electric field associated with the dendrite. The paper presents experimental details that led to the discovery of the dendrites. The observed failures are explained in the context of classical semiconductor physics and electrochemistry.

Download Full-text

Three-dimensional interfacial wave theory of dendritic growth: (II). non-axi-symmetric global wave modes and selection criterion of pattern formation

Chinese Physics B ◽

10.1088/1674-1056/18/2/047 ◽

2009 ◽

Vol 18 (2) ◽

pp. 686-698 ◽

Cited By ~ 9

Author(s):

Chen Yong-Qiang ◽

Tang Xiong-Xin ◽

Xu Jian-Jun

Keyword(s):

Pattern Formation ◽

Dendritic Growth ◽

Three Dimensional ◽

Selection Criterion ◽

Wave Theory ◽

Interfacial Wave ◽

Wave Modes

Download Full-text

COLONY OF THE FUNGUS Aspergillus oryzae AND SELF-AFFINE FRACTAL GEOMETRY OF GROWTH FRONTS

Fractals ◽

10.1142/s0218348x93000046 ◽

1993 ◽

Vol 01 (01) ◽

pp. 11-19 ◽

Cited By ~ 20

Author(s):

SHU MATSUURA ◽

SASUKE MIYAZIMA

Keyword(s):

Aspergillus Oryzae ◽

Environmental Conditions ◽

Fractal Geometry ◽

Nutrient Concentration ◽

Incubation Temperature ◽

Characteristic Exponent ◽

Growth Front ◽

Favorable Condition ◽

The Self ◽

The Mean

A variety of colony shapes of the fungus Aspergillus oryzae under varying environmental conditions such as the nutrient concentration, medium stiffness and incubation temperature are obtained, ranging from a homogeneous Eden-like to a ramified DLA-like pattern. The roughness σ(l, h) of the growth front of the band-shaped colony, where h is the mean front height within l of the horizontal range, satisfies the self-affine fractal relation under favorable environmental conditions. In the most favorable condition of our experiments, its characteristic exponent is found to be a little larger than that of the 2-dimensional Eden model.

Download Full-text