Noise in gallium nitride-based quantum well structures used for nanometer devices in the frequency range 1 HZ-3 MHZ and temperature range 77K - 324K

2002 ◽  
Author(s):  
Rolando Silvano Duran
Open Physics ◽  
2007 ◽  
Vol 5 (3) ◽  
Author(s):  
Li Zhang ◽  
Jun-Jie Shi

AbstractWith the aid of the macroscopic dielectric continuum and Loudon’s uniaxial crystal models, the propagating (PR) and half-space (HS) optical phonon modes and corresponding Fröhlich-like electron-phonon interaction Hamiltonians in a quasi-one-dimensionality (Q1D) wurtzite quantum well wire (QWW) structure are derived and studied. Numerical calculations on a wurtzite GaN/Al0.15Ga0.85N QWW are performed, and discussion is focused mainly on the dependence of the frequency dispersions of PR and HS modes on the free wave-number k z in the z-direction and on the azimuthal quantum number m. The calculated results show that, for given k z and m, there usually exist infinite branches of PR and HS modes in the high-frequency range, and only finite branches of HS modes in the low-frequency range in wurtzite QWW systems. The reducing behaviors of the PR modes to HS modes, and of the HS mode to interface phonon mode have been observed clearly in Q1D wurtzite heterostructures. Moreover, the dispersive properties of the PR and HS modes in Q1D QWWs have been compared with those in Q2D quantum well structures. The underlying physical reasons for these features have also been analyzed in depth.


2003 ◽  
Vol 93 (9) ◽  
pp. 5337-5345 ◽  
Author(s):  
Rolando S. Duran ◽  
Grover L. Larkins ◽  
Carolyne M. Van Vliet ◽  
Hadis Morkoç

1993 ◽  
Vol 334 ◽  
Author(s):  
Nobuyuki Ohtsuka ◽  
Osamu Ueda

AbstractAtomic layer epitaxy (ALE) of InAs has been developed using trimethylindium-dimethylethylamine adduct (TMIDMEA) as a novel In source. Distinct self-limiting growth of InAs was successfully carried out over a wide temperature range from 350°C to 500°C because of the high thermal stability of TMIDMEA. The possible growth temperature range for ALE-InAs was extended by using TM1DMEA. These results lead us to conclude that the use of TMIDMEA enables us to grow InAs/GaAs heterostructures at a single growth temperature. Using this technique, (InAs)1(GaAs)l short period superlattice (12 periods) quantum-well structures were grown on a GaAs(100) substrate at 460°C. A photoluminescence peak at 1.3 µm was observed in these structures at room temperature.


1996 ◽  
Vol 43 (8) ◽  
pp. 1657-1669 ◽  
Author(s):  
SHARMILA BANERJEE and PRANAY K SEN

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS

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