Growth of InAs and (InAs)1(GaAs)l Superlattice Quantum Well Structures on GaAs by Atomic Layer Epitaxy Using Trimethylindium-Dimethylethylamine Adduct

1993 ◽  
Vol 334 ◽  
Author(s):  
Nobuyuki Ohtsuka ◽  
Osamu Ueda
Keyword(s):  
Quantum Well ◽  
Growth Temperature ◽  
Room Temperature ◽  
Atomic Layer ◽  
High Thermal Stability ◽  
Atomic Layer Epitaxy ◽  
Quantum Well Structures ◽  
Temperature Range ◽  
Short Period ◽  
Thermal Stability Of

AbstractAtomic layer epitaxy (ALE) of InAs has been developed using trimethylindium-dimethylethylamine adduct (TMIDMEA) as a novel In source. Distinct self-limiting growth of InAs was successfully carried out over a wide temperature range from 350°C to 500°C because of the high thermal stability of TMIDMEA. The possible growth temperature range for ALE-InAs was extended by using TM1DMEA. These results lead us to conclude that the use of TMIDMEA enables us to grow InAs/GaAs heterostructures at a single growth temperature. Using this technique, (InAs)1(GaAs)l short period superlattice (12 periods) quantum-well structures were grown on a GaAs(100) substrate at 460°C. A photoluminescence peak at 1.3 µm was observed in these structures at room temperature.

A Possibility of ALE Growth of InN by using InCl3

1991 ◽  
Vol 222 ◽  
Author(s):  
Kazuhito Higuchi ◽  
Akio Unno ◽  
Tadashi Shiraishi
Keyword(s):  
Growth Temperature ◽  
Room Temperature ◽  
Atomic Layer ◽  
Inert Gas ◽  
Atomic Layer Epitaxy ◽  
Structural Defects ◽  
Carrier Gas ◽  
Temperature Range

ABSTRACTA possibility of the Atomic Layer Epitaxy, ALE, for InN was demonstrated by using InC13/N2 and NH3/N2. The InCl3 is a solid at room temperature and can be supplied in the reactor by heating with N2 carrier gas. When the solid InCl3 is heated in an inert gas, InCl, InCl3 and In2Cl3 gases are formed. It was clear that the In2Cl5 which is the largest molecule of the three results in solid structural defects. The ALE growth temperature was from 440°C to 505°C. The fact that the ALE was performed at the temperature range from 440°C to 505°C indicates that In was supplied as InC13, suggesting the possibility of InN ALE by using InCl3 and NH3.

scholarly journals Thermal Stability Study of Oxygen Implanted Algaas/Gaas Single Quantum Well Structures Using PhotoreflectancE

1994 ◽  
Vol 354 ◽  
Author(s):  
P J Hughes ◽  
E H Li ◽  
B L Weiss ◽  
H E Jackson ◽  
J S Roberts
Keyword(s):  
Thermal Stability ◽  
Quantum Well ◽  
Room Temperature ◽  
Low Dose ◽  
Stability Study ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Annealing Conditions ◽  
Thermal Stability Of

AbstractThe effects of interdiffusion on the band structure of two MxGaUxAs/GaAs single quantum well (SQW) structures were studied using room temperature photoreflectance. Rapid thermal annealing of the SQW structures at temperatures of 800°C, 900°C and 1000°C for times up to 180 seconds resulted in limited interdiffusion. Low dose (1014 cm”2) oxygen implantation reduced the thermal stability of these structures where the extent of the interdiffusion was found to be greater for the implanted samples for identical annealing conditions.

Ultrathin InAs/GaAs single quantum well structures grown by atomic layer epitaxy

1986 ◽  
Vol 49 (18) ◽  
pp. 1199-1200 ◽  
Author(s):  
M. A. Tischler ◽  
N. G. Anderson ◽  
S. M. Bedair
Keyword(s):  
Quantum Well ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

STEM characterization of short - Period GaAs-GaP strained superlattices

1990 ◽  
Vol 48 (4) ◽  
pp. 596-597
Author(s):  
C. Ballesteros ◽  
J. Piqueras ◽  
H. Laknerb ◽  
B. Bollig ◽  
A. Ruiz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Atomic Layer ◽  
Interesting Case ◽  
Misfit Dislocations ◽  
Group V ◽  
Quantum Well Structures ◽  
Group Iii ◽  
Short Period ◽  
Short Period Superlattices ◽  
The Difference

In the epitaxial growth of superlattice (SL) structures composed of non lattice-matched materials a large difference in the lattice constants of the components could result in the formation of misfit dislocations at the interfaces. However, high quality structures can be obtained when the thickness of the layers are kept below a critical value and the difference is elastically accomodated by strain. In particular GaAs-GaP short period superlattices (3.7% mismatch) constitute an interesting case of strained SLS because the stress related shifts of the electronic levels can result in novel optical and electronic properties. In the present work the quality of GaAs-GaP SLS is studied by STEM.Short period GaAs-GaP superlattices were grown on SI (001) GaAs substrates by Atomic Layer Molecular Beam Epitaxy a new modification of the MBE technique capable of a sharp modulation of both group III and group V sources. To study the possibility of using the GaAs-GaP system for SL and Quantum Well structures a 18 monolayer thick GaAs quantum well was confined by two GaAs-GaP superlattices.

Thermal Stability of Si/Ge Hetero-Interface Grown by Atomic-Layer Epitaxy

2000 ◽  
Vol 618 ◽  
Author(s):  
Keiji Ikeda ◽  
Jiro Yanase ◽  
Satoshi Sugahara ◽  
Masakiyo Matsumura
Keyword(s):  
Thermal Stability ◽  
Growth Temperature ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Ion Scattering ◽  
Axial Impact ◽  
Ion Scattering Spectroscopy ◽  
Thermal Stability Of

ABSTRACTThermal stability has been evaluated for ALE-grown Si/Ge interfaces by co-axial impact collision ion scattering spectroscopy. The IML-thick Si layer on Ge was stable only at less than 360°C. The 2ML-thick Si layer on Ge, however, was stable up to 550°C, and Si layers could be also ALE-grown successively on the 2ML-thick Si layer on Ge, while keeping the interface abrupt, since the Si-ALE growth temperature was about 530°C.

Electroabsorption by Stark effect on room‐temperature excitons in GaAs/GaAlAs multiple quantum well structures

1983 ◽  
Vol 42 (10) ◽  
pp. 864-866 ◽  
Author(s):  
D. S. Chemla ◽  
T. C. Damen ◽  
D. A. B. Miller ◽  
A. C. Gossard ◽  
W. Wiegmann
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Impurity and Stoichiometry Control in Atomic Layer Epitaxy

1992 ◽  
Vol 262 ◽  
Author(s):  
H. Yokoyama ◽  
K. Ikuta ◽  
N. Inoue
Keyword(s):  
Point Defects ◽  
Resonant Tunneling ◽  
Room Temperature ◽  
Defect Density ◽  
Atomic Layer ◽  
Negative Resistance ◽  
Atomic Layer Epitaxy ◽  
Tunneling Diode ◽  
Order Of Magnitude ◽  
Stoichiometry Control

ABSTRACTWe investigate the intrinsic point defects in epilayers grown by atomic layer epitaxy (ALE). Ga vacancies and antisite As atoms in the epilayers are detected by photoluminescence spectroscopy. This shows that the ALE epilayer was grown under As-rich conditions. We propose increasing the TMG flux to reduce the number of point defects. With this method, the number of point defects in ALE epilayers can be decreased to less than that in conventionally grown epilayers. Moreover, it is'found that these point defects are formed by the incomplete Ga coverage, not by the steric hindrance as previously suggested. The carbon concentration is decreased by one order of magnitude by using nitrogen instead of hydrogen as the carrier gas. As an application of this low defect density, we fabricated a GaAs/AlAs resonant tunneling diode and observed the negative resistance at room temperature.

scholarly journals High Resolution X-Ray Diffraction Investigations of Si/SiGe Quantum Well Structures and Si/Ge Short-Period Superlattices

1993 ◽  
Vol 84 (3) ◽  
pp. 475-489
Author(s):  
G. Bauer ◽  
E. Koppensteiner ◽  
P. Hamberger ◽  
J. Nützel ◽  
G. Abstreiter ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray ◽  
Short Period ◽  
Short Period Superlattices
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