AbstractThere are many investigations on surface acoustic wave (SAW) filters with interdigitated interdigital transducers (IIDT) in the last two decades; however, the same is not true for the case of IIDT SAW filters fabricated on layered piezoelectric substrates. Therefore, the aim of this study is to explore the characteristics of the IIDT structures on layered piezoelectric media and further, to improve the frequency response of layered IIDT SAW filters with the unique dispersive properties of a layered piezoelectric structure. A method based on the effective permittivity approach, the coupling of modes (COM) model, and the H-matrix is utilized to analyze the characteristics of IIDT on the ZnO/Diamond/Si layered structure. In this study, it is shown that by optimizing the ratio of input to output IDT pairs, the side-lobe level of frequency responses on the ZnO/Diamond/Si layered structure could be suppressed, similar to that on the half-space substrate. In addition, it is also proved that the notched pass-band could be flattened out by designing the center frequency on the local maximum of the electromechanical coupling coefficient dispersion curve.
PROPERTIES OF ELECTROMAGNETIC FIELDS AND EFFECTIVE PERMITTIVITY EXCITED BY DRIFTING PLASMA WAVES IN SEMICONDUCTOR-INSULATOR INTERFACE STRUCTURE AND EQUIVALENT TRANSMISSION LINE TECHNIQUE FOR MULTI-LAYERED STRUCTURE
