scholarly journals Equipment for growing semiconductor heterostructures in outer space

2021 ◽  
Vol 5 (2) ◽  
pp. 110-115
Author(s):  
V. V. Blinov ◽  
V. M. Vladimirov ◽  
S. N. Kulinich ◽  
A. I. Nikiforov ◽  
D. N. Pridachin ◽  
...  

This article describes the features of the equipment developed at the Rzhanov Institute of Semiconductor Physics for conducting experiments on growing semiconductor heterostructures from molecular beams in outer space under the conditions of an orbital flight of the International Space Station. Working out the processes of epitaxy of semiconductor films in outer space will allow us to grow complex semiconductor structures with sharp boundaries, which serve as the basis for the creation of solar cells, as well as devices of modern microwave, optoand microelectronics. Cascade photovoltaic converters based on such multilayer heterostructures of A3B5 semiconductor compounds have high efficiency and radiation resistance and, therefore, are most widely used for the manufacture of space solar cells. The high efficiency of such batteries is due to the wide spectral range in which solar radiation is effectively absorbed and used in photovoltaic conversion.

2016 ◽  
Vol 75 (13) ◽  
pp. 153-159
Author(s):  
H. Naragino ◽  
Y. Nagata ◽  
K. Okafuji ◽  
S. Ohtomo ◽  
Y. Shimizu ◽  
...  

2014 ◽  
Vol 219 ◽  
pp. 63-67 ◽  
Author(s):  
Marie Christine Roure ◽  
Sylvain Vialle ◽  
Mickaël Rebaud ◽  
Hervé Fontaine ◽  
Pascal Besson

III-V semiconductor compounds are increasingly studied for their interesting properties in the fields of microelectronics, optoelectronics, infrared detectors or solar cells. Firstly, they are promising candidates to replace silicon as a channel material. As CMOS scales beyond the 22 nm node it is widely expected that new higher mobility channel materials such as InxGa1-xAs will have to be introduced [1]. On the other hand, III-V materials have a direct bandgap making them useful for optoelectronic devices or high-efficiency multijunction photovoltaic cells. For these applications InP, GaAs and their alloys as InxGa1-xAs and GaxIn1-xP are investigated [2]. Depending on the targeted applications, several possible integration routes of III-V components could be considered: from 100 mm III-V substrates to III-V epitaxial layers grown on 300 mm silicon wafers as well as a few square centimetres chips bonded on 200 or 300 mm carrier wafers for photonics applications. In all cases, the manufacturing of devices requires a multitude of wet chemical steps including selective etching steps (from a few nanometres up to several microns) and cleaning steps (metallic or particles contamination removal).


Author(s):  
Toshihiro Kinoshita ◽  
Daisuke Ide ◽  
Yasufumi Tsunomura ◽  
Shigeharu Taira ◽  
Toshiaki Baba ◽  
...  
Keyword(s):  

2018 ◽  
Author(s):  
Henk Bolink ◽  
Lidon Gil-Escrig ◽  
Pablo P. Boix ◽  
Cristina Momblona ◽  
Jorge Avila ◽  
...  

Solar RRL ◽  
2020 ◽  
Vol 4 (10) ◽  
pp. 2000241
Author(s):  
Geedhika K. Poduval ◽  
Leiping Duan ◽  
Md. Anower Hossain ◽  
Borong Sang ◽  
Yu Zhang ◽  
...  

2008 ◽  
Author(s):  
Bernd Ahrens ◽  
Bastian Henke ◽  
Paul T. Miclea ◽  
Jacqueline A. Johnson ◽  
Stefan Schweizer

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