scholarly journals PbTe Quantum Dots and Engineering of the Energy Band Alignment in Photovoltaic Applications

2021 ◽  
Author(s):  
Tuğba HACIEFENDİOĞLU ◽  
Demet ASİL
Keyword(s):  
Quantum Dots ◽  
Energy Band ◽  
Band Alignment ◽  
Photovoltaic Applications

Ab initio calculation of pentacene–PbSe hybrid interface for photovoltaic applications

2016 ◽  
Vol 18 (27) ◽  
pp. 18209-18218 ◽  
Author(s):  
P. Roy ◽  
Thao P. Nguyen
Keyword(s):  
Density Functional Theory ◽  
Ab Initio ◽  
Energy Band ◽  
Ab Initio Calculation ◽  
Density Functional ◽  
Band Alignment ◽  
Density Functional Theory Study ◽  
Functional Theory ◽  
Photovoltaic Applications ◽  
Hybrid Interface

A density functional theory study on the pentacene–PbSe hybrid interface is conducted to construct the energy band alignment for photovoltaic applications.

Tailoring the energy band gap of alloyed Pb1−xZnxS quantum dots for photovoltaic applications

2018 ◽  
Vol 29 (24) ◽  
pp. 20914-20922 ◽  
Author(s):  
Ali Badawi ◽  
Alia Hendi Al Otaibi ◽  
Ateyyah M. Albaradi ◽  
N. Al-Hosiny ◽  
Sultan E. Alomairy
Keyword(s):  
Quantum Dots ◽  
Band Gap ◽  
Energy Band ◽  
Energy Band Gap ◽  
Photovoltaic Applications

scholarly journals Effects of CsSnxPb1−xI3 Quantum Dots as Interfacial Layer on Photovoltaic Performance of Carbon-Based Perovskite Solar Cells

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Chi Zhang ◽  
Zhiyuan He ◽  
Xuanhui Luo ◽  
Rangwei Meng ◽  
Mengwei Chen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Photovoltaic Performance ◽  
Perovskite Solar Cells ◽  
Photogenerated Electron ◽  
Depletion Region ◽  
Band Alignment ◽  
Back Surface ◽  
The One ◽  
Carbon Based

AbstractIn this work, inorganic tin-doped perovskite quantum dots (PQDs) are incorporated into carbon-based perovskite solar cells (PSCs) to improve their photovoltaic performance. On the one hand, by controlling the content of Sn2+ doping, the energy level of the tin-doped PQDs can be adjusted, to realize optimized band alignment and enhanced separation of photogenerated electron–hole pairs. On the other hand, the incorporation of tin-doped PQDs provided with a relatively high acceptor concentration due to the self-p-type doping effect is able to reduce the width of the depletion region near the back surface of the perovskite, thereby enhancing the hole extraction. Particularly, after the addition of CsSn0.2Pb0.8I3 quantum dots (QDs), improvement of the power conversion efficiency (PCE) from 12.80 to 14.22% can be obtained, in comparison with the pristine device. Moreover, the experimental results are analyzed through the simulation of the one-dimensional perovskite/tin-doped PQDs heterojunction.

An insight into the surface engineering of colloidal PbSe quantum dots for polymer hybrid photovoltaic applications

2021 ◽  
Author(s):  
Aarti Mehta ◽  
A. K. Srivastava ◽  
Govind Gupta ◽  
Suresh Chand ◽  
Shailesh Narain Sharma
Keyword(s):  
Quantum Dots ◽  
Surface Engineering ◽  
Polymer Hybrid ◽  
Photovoltaic Applications ◽  
Insight Into

Green CsSnX3 (X = Cl, Br, I)-Derived Quantum Dots for Photovoltaic Applications: First-Principles Investigations

2021 ◽  
Vol 125 (4) ◽  
pp. 2592-2606
Author(s):  
Bhakti Kshirsagar ◽  
Namrata Jaykhedkar ◽  
Kalpna Jain ◽  
Shyam Kishor ◽  
Vaishali Shah ◽  
...  
Keyword(s):  
Quantum Dots ◽  
First Principles ◽  
Photovoltaic Applications

Efficient quantum dot-sensitized solar cell with tunable energy band CdSexS(1−x) quantum dots

2012 ◽  
Vol 22 (21) ◽  
pp. 10525 ◽  
Author(s):  
Ting Shu ◽  
Ziming Zhou ◽  
Heng Wang ◽  
Guanghui Liu ◽  
Peng Xiang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cell ◽  
Quantum Dot ◽  
Energy Band

SPACE-CHARGE SPECTROSCOPY OF ELECTRONIC STATES IN Ge/Si QUANTUM DOTS WITH TYPE-II BAND ALIGNMENT

2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Binding Energy ◽  
Space Charge ◽  
Tensile Strain ◽  
Electronic States ◽  
Band Alignment ◽  
Type Ii ◽  
Electron Confinement ◽  
Si Quantum Dots

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.

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