SPACE-CHARGE SPECTROSCOPY OF ELECTRONIC STATES IN Ge/Si QUANTUM DOTS WITH TYPE-II BAND ALIGNMENT

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.

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Electronic states inGe∕Siquantum dots with type-II band alignment initiated by space-charge spectroscopy

Physical Review B ◽

10.1103/physrevb.73.115333 ◽

2006 ◽

Vol 73 (11) ◽

Cited By ~ 60

Author(s):

A. I. Yakimov ◽

A. V. Dvurechenskii ◽

A. I. Nikiforov ◽

A. A. Bloshkin ◽

A. V. Nenashev ◽

...

Keyword(s):

Space Charge ◽

Electronic States ◽

Band Alignment ◽

Type Ii

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Non-equilibrium transport in arrays of type-II Ge/Si quantum dots

physica status solidi (c) ◽

10.1002/pssc.200303644 ◽

2004 ◽

Vol 1 (1) ◽

pp. 21-24 ◽

Cited By ~ 1

Author(s):

N.P. Stepina ◽

A.I. Yakimov ◽

A.V. Dvurechenskii ◽

A.V. Nenashev ◽

A.I. Nikiforov

Keyword(s):

Quantum Dots ◽

Type Ii ◽

Si Quantum Dots ◽

Non Equilibrium

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Tunable type-II band alignment and electronic structure of C3N4/MoSi2N4 heterostructure: Interlayer coupling and electric field

Physical Review B ◽

10.1103/physrevb.105.045303 ◽

2022 ◽

Vol 105 (4) ◽

Author(s):

Cuong Q. Nguyen ◽

Yee Sin Ang ◽

Son-Tung Nguyen ◽

Nguyen V. Hoang ◽

Nguyen Manh Hung ◽

...

Keyword(s):

Electronic Structure ◽

Electric Field ◽

Interlayer Coupling ◽

Band Alignment ◽

Type Ii

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Band Alignment Tailoring of InAs1−xSbx/GaAs Quantum Dots: Control of Type I to Type II Transition

Nano Letters ◽

10.1021/nl102237n ◽

2010 ◽

Vol 10 (8) ◽

pp. 3052-3056 ◽

Cited By ~ 25

Author(s):

J. He ◽

C. J. Reyner ◽

B. L. Liang ◽

K. Nunna ◽

D. L. Huffaker ◽

...

Keyword(s):

Quantum Dots ◽

Band Alignment ◽

Type I ◽

Type Ii

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Effects of Interface Grading on Electronic States and Optical Transitions in GaSb Type-II Quantum Dots in GaAs

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04dj06 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DJ06 ◽

Cited By ~ 4

Author(s):

Takuya Kawazu ◽

Hiroyuki Sakaki

Keyword(s):

Quantum Dots ◽

Electronic States ◽

Type Ii ◽

Optical Transitions

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Modification of band alignment at interface of AlyGa1-ySb/AlxGa1-xAs type-II quantum dots by concentrated sunlight in intermediate-band solar cells with separated absorption and depletion regions

10.1117/12.2002455 ◽

2013 ◽

Cited By ~ 1

Author(s):

A. Kechiantz ◽

A. Afanasev ◽

J.-L. Lazzari

Keyword(s):

Quantum Dots ◽

Solar Cells ◽

Band Alignment ◽

Type Ii ◽

Intermediate Band ◽

Intermediate Band Solar Cells

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Recombination Dynamics of High-Density Photocarriers in Type-II Ge/Si Quantum Dots

Journal of the Physical Society of Japan ◽

10.1143/jpsj.81.064712 ◽

2012 ◽

Vol 81 (6) ◽

pp. 064712 ◽

Cited By ~ 10

Author(s):

Takeshi Tayagaki ◽

Kei Ueda ◽

Susumu Fukatsu ◽

Yoshihiko Kanemitsu

Keyword(s):

Quantum Dots ◽

High Density ◽

Type Ii ◽

Si Quantum Dots ◽

Recombination Dynamics

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Many-particle effects in excitonic transitions in type-II Ge/Si quantum dots

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/s1386-9477(02)00294-1 ◽

2002 ◽

Vol 13 (2-4) ◽

pp. 1026-1029 ◽

Cited By ~ 5

Author(s):

A.I Yakimov ◽

N.P Stepina ◽

A.V Dvurechenskii ◽

A.I Nikiforov ◽

A.V Nenashev

Keyword(s):

Quantum Dots ◽

Type Ii ◽

Excitonic Transitions ◽

Si Quantum Dots

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Electronic structure study of ion-implanted Si quantum dots in a SiO2matrix: Analysis of quantum confinement theories

Physical Review B ◽

10.1103/physrevb.83.035112 ◽

2011 ◽

Vol 83 (3) ◽

Cited By ~ 37

Author(s):

E. G. Barbagiovanni ◽

L. V. Goncharova ◽

P. J. Simpson

Keyword(s):

Quantum Dots ◽

Electronic Structure ◽

Quantum Confinement ◽

Structure Study ◽

Si Quantum Dots ◽

Ion Implanted

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ANGLE-RESOLVED PHOTOEMISSION STUDIES OF THE 3C–SiC(001)(2×1) SURFACE

Surface Review and Letters ◽

10.1142/s0218625x9900127x ◽

1999 ◽

Vol 06 (06) ◽

pp. 1151-1157 ◽

Cited By ~ 2

Author(s):

L. DUDA ◽

L. S. O. JOHANSSON ◽

B. REIHL ◽

H. W. YEOM ◽

S. HARA ◽

...

Keyword(s):

Electronic Structure ◽

Synchrotron Radiation ◽

Binding Energy ◽

Brillouin Zone ◽

Surface State ◽

Electronic States ◽

Dangling Bond ◽

Poor Agreement ◽

Bond State ◽

Surface Brillouin Zone

We have investigated the electronic structure of the single-domain 3C–SiC(001)(2×1) using angle-resolved photoemission and synchrotron radiation. Two different surface-state bands are clearly identified within the bulk bandgap. The upper band has a binding energy of 1.4 eV at the center of the surface Brillouin zone (SBZ) and shows a weak dispersion of 0.3 eV in the [Formula: see text] direction, but is nondispersive in the perpendicular direction. It has a polarization dependence suggesting a pz character, as expected for a Si dangling-bond state. The second band is located at 2.4 eV binding energy and is nondispersive. The weak or nonexistent dispersions suggest very localized electronic states at the surface and show poor agreement with calculated dispersions for the proposed models for the 2×1 and c(4×2) reconstructions.

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