scholarly journals The effect of thickness on the optical properties of Cu2S thin films

2019 ◽  
Vol 13 (26) ◽  
pp. 121-127
Author(s):  
Nadia Jasim Ghdeeb

In this work, the optical properties of Cu2S with different thickness(1400, 2400, 4400) Ǻ have been prepared by chemical spray pyrolysis method onto clean glass substrate heated at 283 oC ±2. The effectof thickness on the optical properties of Cu2S has been studied. Itwas found that the optical properties of the electronic transitions onfundamental absorption edge were direct allowed and the value of theoptical energy gap of Cu2S (Eg) for direct transition decreased from(2.4-2.1) eV with increasing of the thickness from (1400 - 4400)Ǻrespectively. Also it was found that the absorption coefficient isincreased with increasing of thicknesses. The optical constants suchas extinction coefficient, refractive index and the imaginary part ofthe dielectric constant have similar termed of variation for theabsorption coefficient.

Author(s):  
Sabah A. Salman ◽  
Ziad T. Khodair ◽  
Sahar J. Abed

Cobalt Ferrite CoFe2O4 thin films have been deposited by chemical spray pyrolysis method (CSP) on glass substrates at different substrate temperatures (300, 350, 400 and 450°C) with an interval of (50°C) using Cobalt Nitrate and Ferric Nitrate as Cobalt and Iron sources respectively, at thickness (400±20) nm. The effect of substrate temperatures change on the optical properties for all prepared films was studied. The optical properties for all the films were studied by recording the transmittance and absorbance spectrum in the range of (300-900) nm. The results showed decreases in transmittance and increases in absorbance with increasing the substrate temperatures. the optical energy gap for allowed direct electronic transition was calculated and it was found that decreases with increasesing the substrate temperatures (2.40-2.22 eV), the Urbach energy increases with increasesing the substrate temperatures and it is values range between (634.6-700.5) meV. The optical constants (absorption coefficient, refractive index, extinction coefficient, real and imaginary parts of dielectric constant and optical conductivity) as a function of photon energy for all prepared films were calculated.


Author(s):  
Sami Salmann Chiad

By chemical spray pyrolysis method. The CdO thin film prepared at constant film thickness (350 nm). The prepared films are annealed at a temperature of 450 and 500 °C. The optical properties are calculated from the measurement of UV-Visible spectrophotometer spectrum in the range of (300-900) nm at room temperature. The transmittance, absorption coefficient, extinction coefficient, refractive index, and skin depth are calculated as annealing temperature. The energy gap decreased from 2.52 eV to 2.47 eV when the annealing temperature increased from room temperature to 500 °C.


2019 ◽  
Vol 14 (29) ◽  
pp. 182-190
Author(s):  
Nadia Jasim Ghdeeb

CdS and CdS:Sn thin films were successfully deposited on glasssubstrates by spray pyrolysis method. The films were grown atsubstrate temperatures 300 C°. The effects of Sn concentration on thestructural and optical properties were studied.The XRD profiles showed that the films are polycrystalline withhexagonal structure grown preferentially along the (002) axis. Theoptical studies exhibit direct allowed transition. Energy band gapvary from 3.2 to 2.7 eV.


2017 ◽  
Vol 14 (1) ◽  
pp. 75-79
Author(s):  
Baghdad Science Journal

In this research Bi2S3 thin films have been prepared on glass substrates using chemical spray pyrolysis method at substrate temperature (300oC) and molarity (0.015) mol. Structural and optical properties of the thin films above have been studied; XRD analysis demonstrated that the Bi2S3 films are polycrystalline with (031) orientation and with Orthorhombic structure. The optical properties were studied using the spectral of the absorbance and transmission of films in wavelength ranging (300-1100) nm. The study showed that the films have high transmission within the range of the visible spectrum. Also absorption coefficient, extinction coefficient and the optical energy gap (Eg) was calculated, found that the film have direct energy gap equal to 2.8 eV.


2014 ◽  
Vol 11 (2) ◽  
pp. 641-651
Author(s):  
Baghdad Science Journal

Thin films of (Cu2S)100-x( SnS2 )x at X=[ 30,40, &50)]% with thickness (0.9±0.03)µm , had been prepared by chemical spray pyrolysis method on glass substrates at 573 K. These films were then annealed under low pressure of(10-2) mbar ,373)423&473)K for one hour . This research includes , studying the the optical properties of (Cu2S)100-x-(SnS2)x at X=[ 30,40, &50)]% .Moreover studying the effect of annealing on their optical properties , in order to fabricate films with high stability and transmittance that can be used in solar cells. The transmittance and absorbance spectra had been recorded in the wavelength range (310 - 1100) nm in order to study the optical properties . It was found that these films had direct optical band gap which decreases with the increasing SnS2 ratio , while it increasing with the increase in the annealing temperature at all ratio


2014 ◽  
Vol 11 (2) ◽  
pp. 518-526
Author(s):  
Baghdad Science Journal

Thin films of pure tin mono-sulfide SnS and tin mono-sulfide for (1,2,3,4)% fluorine SnS:F with Thicknesses of (0.85 ±0.05) ?m and (0.45±0.05) ?m respectively were prepared by chemical spray pyrolysis technique. the effect of doping of F on structural and optical properties has been studied. X-Ray diffraction analysis showed that the prepared films were polycrystalline with orthorhombic structure. It was found that doping increased the intensity of diffraction peaks. Optical properties of all samples were studied by recording the absorption and transmission spectrum in range of wave lengths (300-900) nm. The optical energy gap for direct forbidden transition and indirect allowed transition were evaluated It is found that for doping less than 2% the optical energy gap increases as the percentage of doping increases in the samples while for doping more than 2% the values of the optical energy gap decreases as the percentage of doping increases.


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