Electron-beam modification of VK8 hard alloy: Resulting surface relief

2008 ◽  
Vol 38 (2) ◽  
pp. 119-120
Author(s):  
S. V. Grigor’ev ◽  
Yu. A. Kolubaeva ◽  
Yu. F. Ivanov
2000 ◽  
Vol 125 (1-3) ◽  
pp. 251-256 ◽  
Author(s):  
Y.F. Ivanov ◽  
V.P. Rotshtein ◽  
D.I. Proskurovsky ◽  
P.V. Orlov ◽  
K.N. Polestchenko ◽  
...  

2014 ◽  
Vol 571 ◽  
pp. 175-179 ◽  
Author(s):  
V. Bilanych ◽  
V. Komanicky ◽  
A. Feher ◽  
V. Kuzma ◽  
V. Rizak

2020 ◽  
Vol 65 (3) ◽  
pp. 247
Author(s):  
B. V. Bilanych ◽  
O. Shylenko ◽  
V. M. Latyshev ◽  
A. Feher ◽  
V. S. Bilanych ◽  
...  

The interaction of an electron beam with chalcogenide films As4Se96 has been studied. The kinetics of the formation of an electron-induced surface relief in the dose range 9,3 · 103–9,3 · 107 мC· cm−2 is established. The parameters of the interaction of a film As4Se96 with an electron beam are calculated. It is shown that the observed point of inversion of the shape of the electron-induced relief can be caused by the crossover of the surface potential. The process of manufacturing the image element by the single-step lithography is realized on the surface of an As4Se96 film.


2009 ◽  
Vol 37 (10) ◽  
pp. 1998-2001 ◽  
Author(s):  
N.N. Koval ◽  
Y.F. Ivanov ◽  
V.E. Ovcharenko ◽  
Y.A. Kolubaeva ◽  
S.V. Grigoryev ◽  
...  

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