1039 kA/cm2 peak tunneling current density in GaN-based resonant tunneling diode with a peak-to-valley current ratio of 1.23 at room temperature on sapphire substrate

2021 ◽  
Vol 119 (15) ◽  
pp. 153506
Author(s):  
HePeng Zhang ◽  
JunShuai Xue ◽  
ZhiPeng Sun ◽  
LanXing Li ◽  
JiaJia Yao ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Current Density ◽  
Resonant Tunneling ◽  
Room Temperature ◽  
Tunneling Current ◽  
Resonant Tunneling Diode ◽  
Current Ratio ◽  
Tunneling Diode

Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature

2000 ◽  
Vol 21 (4) ◽  
pp. 146-148 ◽  
Author(s):  
Yan-Kuin Su ◽  
Jia-Rong Chang ◽  
Yan-Ten Lu ◽  
Chuing-Liang Lin ◽  
Kuo-Ming Wu ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Room Temperature ◽  
Resonant Tunneling Diode ◽  
High Peak ◽  
Current Ratio ◽  
Double Barrier ◽  
Tunneling Diode ◽  
Double Barrier Resonant Tunneling

RESONANT TUNNELING IN DOUBLE BARRIER SEMICONDUCTOR NANO-STRUCTURES

1995 ◽  
Vol 09 (23) ◽  
pp. 3039-3051
Author(s):  
DILIP K. ROY ◽  
AJIT SINGH
Keyword(s):  
Quantum Measurement ◽  
Current Density ◽  
Resonant Tunneling ◽  
Tunneling Current ◽  
Double Barrier ◽  
Tunneling Diode ◽  
Nano Structures ◽  
Current Densities ◽  
Double Barrier Resonant Tunneling ◽  
Measurement Approach

The principles of operation of a double barrier resonant tunneling diode (DBRTD) giving rise to negative differential conductivity effect are first reviewed. Next, the physics of resonant tunneling based on (i) the time-independent conventional approach and (ii) the time-dependent quantum measurement approach, as applied to a DBRTD, is discussed. Expressions for the resonant tunneling current densities through the barriers are then derived on the ideas of quantum measurement. Through the well the current, however, flows by the conventional mechanism. The three current density magnitudes are found to be identical under resonant conditions. Finally, an expression for the resonant tunneling current density due to a group of incident electrons is derived.

Room Temperature Oscillation in Si/Si1-xGex Resonant Tunneling Diode

2007 ◽  
Author(s):  
Yoshiyuki Suda ◽  
Hirotaka Maekawa ◽  
Naoya Asaoka ◽  
Michihiko Suhara
Keyword(s):  
Resonant Tunneling ◽  
Room Temperature ◽  
Temperature Oscillation ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode
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