Influence of electric field, hydrostatic pressure and temperature on the electronic states in a Pöschl-Teller quantum well

2010 ◽  
Vol 45 (6) ◽  
pp. 258-261 ◽  
Author(s):  
A. Hakimyfard ◽  
M. G. Barseghyan ◽  
C. A. Duque ◽  
A. A. Kirakosyan
Keyword(s):  
Hydrostatic Pressure ◽  
Electric Field ◽  
Quantum Well ◽  
Electronic States

THE EFFECTS OF HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD ON SHALLOW DONOR IMPURITIES IN GaAs/GaAlAs GRADED QUANTUM WELL

2005 ◽  
Vol 12 (02) ◽  
pp. 155-159 ◽  
Author(s):  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SÖKMEN
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Electric Field ◽  
Quantum Well ◽  
Quantum Confinement ◽  
Variational Approach ◽  
Shallow Donor ◽  
Impurity Position ◽  
Donor Binding Energy ◽  
Electric Field Direction

Using a variational approach, we have investigated the effects of the hydrostatic pressure, the well dimension, impurity position and electric field direction on the binding energy of shallow donor impurities in GaAs/GaAlAs graded quantum well (GQW). We have found that the changes in donor binding energy in GQW strongly depend not only on the quantum confinement, but also on the hydrostatic pressure, on the direction of the electric field and on the impurity position.

The electronic states and the optical absorption for an asymmetrical quantum well applied with an external electric field

2019 ◽  
Vol 33 (26) ◽  
pp. 1950301 ◽  
Author(s):  
Yu Liu ◽  
Youbin Yu
Keyword(s):  
Optical Absorption ◽  
Iterative Method ◽  
Electric Field ◽  
Quantum Well ◽  
Quantum Wells ◽  
External Electric Field ◽  
Electronic States ◽  
Matrix Approach ◽  
Absorption Coefficients ◽  
Asymmetric Quantum

Electric field influences on the electronic states and the optical absorption in an asymmetrical quantum well with semiparabolic potential are investigated. The formula for the absorption coefficients in this asymmetrical quantum well with electric field are deduced by applying iterative method and density-matrix approach. The results are discussed with GaAs/AlGaAs materials and show that the external electric field has a significant effect on the electronic states and absorption coefficients of asymmetric quantum wells.

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